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21.
22.
文章详细介绍了基于USB总线的虚拟频谱分析仪的设计过程。该仪器使用嵌入式混合处理器MC56F8323来实现动态信号的实时采集、频谱分析和数字滤波等功能。处理结果由USB2.0接口芯片CY7C68013上传至PC机.以完成数据显示、存储、绘制图形等功能。其中,CY7C68013工作于Slave FIFO模式,以实现与MC56F8323间的数据传输。该系统可同时对两路动态信号进行实时谱分析,每路采样频率高选500kHz。  相似文献   
23.
Routing Correlated Data with Fusion Cost in Wireless Sensor Networks   总被引:1,自引:0,他引:1  
In this paper, we propose a routing algorithm called minimum fusion Steiner tree (MFST) for energy efficient data gathering with aggregation (fusion) in wireless sensor networks. Different from existing schemes, MFST not only optimizes over the data transmission cost, but also incorporates the cost for data fusion, which can be significant for emerging sensor networks with vectorial data and/or security requirements. By employing a randomized algorithm that allows fusion points to be chosen according to the nodes' data amounts, MFST achieves an approximation ratio of 5/4log(k + 1), where k denotes the number of source nodes, to the optimal solution for extremely general system setups, provided that fusion cost and data aggregation are nondecreasing against the total input data. Consequently, in contrast to algorithms that only excel in full or nonaggregation scenarios without considering fusion cost, MFST can thrive in a wide range of applications  相似文献   
24.
Commercial purity aluminum (99.5%) was fabricated by equal channel angular pressing (ECAP) up to total accumulated strains of approx. 10. The annealing behavior of material deformed to total strains of approx. 1 and 10 was investigated, using heat treatments of 2 h at various temperatures from 100 to 500 °C. The microstructure of the annealed materials was characterized using the electron back-scatter pattern technique. A number of parameters were determined including the distribution and average values of both the boundary spacings and misorientations. For samples deformed to a total strain of 1, annealing resulted in discontinuous recrystallization. For samples deformed to a total strain of 10, annealing resulted in microstructures exhibiting characteristics of both uniform coarsening and, in a number of places, of discontinuous recrystallization. An attempt was made, based on the boundary spacing distributions, to separate these two components. The grain size after annealing was still however small, being just 6.4 μm after 2 h at 300 °C.  相似文献   
25.
农村通信如何"突围"   总被引:2,自引:0,他引:2  
宋军  刘云 《世界电信》2003,16(10):3-5
农村通信作为农村地区信息化的基础,对于全面建设小康具有特殊的重要地位。介绍了我国农村通信的发展现状,分析了农村通信发展的困难压其原因,最后对农村压边远、欠发达地区通信的均衡震展提出了一些建议。  相似文献   
26.
UC3875在超声电源功率控制系统中的应用   总被引:7,自引:0,他引:7  
根据超声波发生器的功率控制系统原理 ,阐述了移相控制策略对超声波发生器输出电压波形的影响 ,介绍了移相控制专用芯片UC3875的电路结构和使用设计方法。  相似文献   
27.
在全IP体系下,无缝连接将保证用户在跨越同构和异构网络时业务体验的连续性和一致性.无缝连接包括无缝切换和协同两方面内容,需要情景管理、公共无线资源管理、媒体转换以及网络协同等功能实体,从终端的角度看,无缝连接需要基于配置文件、情景和应用自动完成连接的建立、更新和修改.以UMA为例说明了无缝连接的应用和价值.  相似文献   
28.
A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.  相似文献   
29.
A simple template‐free high‐temperature evaporation method was developed for the growth of crystalline Si microtubes for the first time. As‐grown Si microtubes were characterized using X‐ray diffraction, scanning electron microscopy, transmission electron microscopy, and room‐temperature photoluminescence. The lengths of the Si tubes can reach several hundreds of micrometers; some of them have lengths on the order of millimeters. Each tube has a uniform outer diameter along its entire length, and the typical outer diameter is ≈ 2–3 μm. Most of the tubes have a wall thickness of ≈ 400–500 nm, though a considerable number of them exhibit a very thin wall thickness of ≈ 50 nm. Room‐temperature photoluminescence measurement shows the as‐synthesized Si microtubes have two strong emission peaks centered at ≈ 589 nm and ≈ 617 nm and a weak emission peak centered at ≈ 455 nm. A possible mechanism for the formation of these Si tubes is proposed. We believe that the present discovery of the crystalline Si microtubes will promote further experimental studies on their physical properties and smart applications.  相似文献   
30.
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