Study of 18-cm long single-sided AC-coupled silicon microstripdetectors

The SSC GEM silicon Central Tracker design incorporated 18-cm long single-sided AC-coupled silicon microstrip ladders. Compared to the 12-cm long ladders considered in the preliminary stages of the tracker design, the 18-cm long ladders have the advantage of reduced cost, channel count and overall power consumption, and led to a simplified tracker assembly. However, such long ships also present the challenge of maintaining satisfactory performance. The increased capacitance and series resistance contribute to lower signal-to-noise ratios, longer time walk, higher power consumption per channel and increased probability of crosstalk to neighboring channels. In this paper, an accurate method to calculate the geometric capacitance of the AC-coupled microstrips is presented and the calculated results are compared with measurements, SPICE simulations are performed to predict the noise, the extent of interstrip capacitive coupling and the dispersion of the detector signal due to the finite series resistance of the metal strips and the long length of the detector. The influence of the preamplifier current and the shaping time on the signal and noise levels is also presented. The study concludes that the 18-cm long ladders can successfully satisfy the performance goals of the GEM silicon Central Tracker     

Enhanced electron emission from phosphorus-doped diamond-cladsilicon field emitter arrays

Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities     

Optimal solutions for a dynamic bandwidth allocation scheme in high-speed networks

In this paper, we investigate the problem of determining the optimal bandwidth allocation for a Dynamic Bandwidth Allocation Scheme (DBAS). The objective is to minimize the total amount of bandwidth required to satisfy the Quality of Service (QoS) requirements of all traffic streams. It is shown that when the performance functions satisfy a certain number of conditions, there exists a unique optimal bandwidth allocation such that, for each traffic stream, either its QoS is just satisfied or its QoS is over-satisfied and it is allocated zero bandwidth. Such an allocation is said to be efficient. It is also shown that there exists a unique efficient allocation in the entire feasible region. An iterative algorithm is developed to compute the efficient allocation employing its special properties. Numerical examples are presented to demonstrate how the algorithm works. Future extensions of this work are also discussed.Partially supported by NSERC of Canada through grants OGP14020 and STRIN-200.     

Oxygen absorption kinetics in YBa2Cu3Ox

The oxygen absorption process in highly aligned YBa₂Cu₃O_x samples in air and in pure oxygen was studied at several constant temperatures. The process can be expressed in two steps, a chemical reaction controlled step and a diffusion controlled step. The kinetic equations are as follows respectively:

(1 − a_t) ln(1 − a_t) + a_t = k_Dt

The activation energy was calculated using an Arrhenius equation. The technical conditions of heat treatment for oxygen absorption of highly aligned YBa₂Cu₃O_x crystals are discussed.     

Novel technique for SiO2 formed by liquid-phasedeposition for low-temperature processed polysilicon TFT

A technique for SiO₂ formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO₂ film with a lower P-etch rate shows a dense structure. LPD SiO₂ also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO ₂ as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)