Dark Soliton Transmission in Twin-Core Fiber

Dark soliton transmission is investigated by numerical simulation in twin-core fiber. It is shown that the energy exchange between two cores relates to initial relative phases and initial relative amplitudes of input dark solitons, it may be of regular and apparent period, irregular period, or non-period, and the influence factors on beat length are analysed.     

装备保障中的科技创新问题

从科技创新的概念出发,结合装备研制开发对使用维修保障的影响,探讨了科研院所在装备保障科技创新工作中存在的问题,提出了解决方法。科研院所装备保障科技创新能力体现在人员观念、装备预研能力、装备研制管理、装备管理技术和装备技术革新等五个方面,应按此建立科研院所装备保障科技创新能力的评价体系,进行综合考评。     

基于频谱编码技术的OCDMA系统

光码分多址（OCDMA）系统中的地址码采用双极性码是一种较好的选择,但需要解决含有成分的地址码不能在光信道中直接传输的问题。频谱编码（spectral encoding）技术不但能有效解决这一难题,并有助于全光OCDMA的实现。在分析频谱编码的理论基础的前提下,介绍了几种基于双极性码和频谱编码的OCDMA的实现方案,并探讨了系统 前景及需要解决的技术问题。     

Schottky barrier thin-film transistor (SBTFT) with silicidedsource/drain and field-induced drain extension

A novel Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain (FID) extension is proposed and demonstrated. In the new device configuration, a metal field-plate (or sub-gate) lying on the passivation oxide is employed to induce a sheet of carriers in a channel offset region located between the silicided drain and the active channel region underneath the main gate. The new device thus allows ambipolar device operation by simply switching the polarity of the bias applied to the field plate. In contrast to the conventional SBTFT that suffers from high GIDL (gate-induced drain leakage)-like off-state leakage current, the new SBTFT with FID is essentially free from the GIDL-like leakage current. In addition, unlike the conventional SBTFT that suffers from low on-off current ratio, the new device exhibits high on/off current ratio up to 10⁶ for both n- and p-channel modes of operation. Moreover, the implantless feature and the ambipolar capability of the new device also result in extra low mask count for CMOS process integration. These excellent device characteristics, coupled with its simple processing, make the new device very promising for future large-area electronic applications     

Sub-50 nm P-channel FinFET

High-performance PMOSFETs with sub-50-nm gate-length are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel effects. This vertical double-gate SOI MOSFET features: 1) a transistor channel which is formed on the vertical surfaces of an ultrathin Si fin and controlled by gate electrodes formed on both sides of the fin; 2) two gates which are self-aligned to each other and to the source/drain (S/D) regions; 3) raised S/D regions; and 4) a short (50 nm) Si fin to maintain quasi-planar topology for ease of fabrication. The 45-nm gate-length p-channel FinFET showed an I_dsat of 820 μA/μm at V_ds=V_gs=1.2 V and T _ox=2.5 mm. Devices showed good performance down to a gate-length of 18 nm. Excellent short-channel behavior was observed. The fin thickness (corresponding to twice the body thickness) is found to be critical for suppressing the short-channel effects. Simulations indicate that the FinFET structure can work down to 10 nm gate length. Thus, the FinFET is a very promising structure for scaling CMOS beyond 50 nm     

The development of inflatable array antennas

Inflatable array antennas are being developed to significantly reduce the mass, the launch vehicle stowage volume, and the cost of future spacecraft systems. Three inflatable array antennas, previously developed for spacecraft applications, are a 3.3 m×1.0 m L-band synthetic-aperture radar (SAR) array, a 1.0 m-diameter X-band telecom reflectarray, and a 3 m-diameter Ka-band telecom reflectarray. All three antennas are similar in construction, and each consists of an inflatable tubular frame that supports and tensions a multi-layer thin-membrane RF radiating surface with printed microstrip patches, The L-band SAR array achieved a bandwidth of 80 MHz, an aperture efficiency of 74%, and a total mass of 15 kg. The X-band reflectarray achieved an aperture efficiency of 37%, good radiation patterns, and a total mass of 1.2 kg (excluding the inflation system). The 3 m Ka-band reflectarray achieved a surface flatness of 0.1 mm RMS, good radiation patterns, and a total mass of 12.8 kg (excluding the inflation system). These antennas demonstrated that inflatable arrays are feasible across the microwave and millimeter-wave spectrum. Further developments of these antennas are deemed necessary, in particular, in the area of qualifying the inflatable structures for space-environment usage     

用于视频对象平面生成的运动对象自动分割

新的视频编码标准MPEG-4具有基于内容的功能。它把图像序列分解成视频对象平面(VOP),每个VOP代表一个运动对象。文中提出了一种提取运动对象的新的视频序列分割算法,算法的核心是一个对象跟踪器,它利用Hausdorff距离将对象的二维二值模型与后续帧进行匹配,然后采用一种新的基于运动相连成分的模型刷新方法对模型的每一帧进行刷新。初始的模型自动产生,再利用滤波技术滤除静止背景,最后,利用二值模型从序列中提取出VOP。     

全业务网APON光纤接入传输系统

介绍在国家八六三计划资助下研制成功的全业务网接入传输系统 ,首先简述了系统构成、用户业务接口和传输帧结构 ,接着对 HFC双向光纤传输系统进行了简介 ,最后介绍了 ATM- PON系统和HFC系统的性能指标     

基于目标检测网络的轮对踏面缺陷检测方法

针对传统图像处理算法难以快速、准确识别轮对踏面缺陷的问题,提出一种采用双深度神经网络对轮对踏面缺陷进行检测的算法。该双网络分为踏面提取网络与缺陷识别网络。根据踏面为大目标的特点,分析与测试SSD网络,并用该网络提取轮对图像中的踏面区域。为提高踏面缺陷识别效率,在提取出踏面图像后,针对踏面缺陷属于中、小目标的特点,对YOLOv3网络结构进行优化得到M-YOLOv3。实验测试表明:提取踏面区域时,SSD算法的精度均值(AP)最高,达99.8%;识别踏面缺陷时,M-YOLOv3的AP达89.9%,相较于原始YOLOv3,单张图像计算耗时减少7.1%,同时AP仅有0.6%的损耗。结果表明,所提算法具有较高的检测准确率。     

Single-Crystalline TiO2(B) Nanobelts with Unusual Large Exposed {100} Facets and Enhanced Li-Storage Capacity

The {100} facet of single-crystalline TiO₂(B) is an ideal platform for inserting Li ions, but it is hard to be obtained due to its high surface energy. Here, the single-crystalline TiO₂(B) nanobelts from H₂Ti₃O₇ with nearly 70% {100} facets exposed are synthesized, which significantly enhances Li-storage capacity. The first-principle calculations demonstrate an ab in-plane 2D diffusion through the exposed {100} facets. As a consequence, the nanobelts can significantly accommodate Li ions in LiTiO₂ formula with specific capacity up to 335 mAh g⁻¹, which is in good agreement with the electrochemical characterizations. Coating with conductive and protective poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate), the cut-off discharge voltage is as low as 0.5 V, leading to a capacity of 160.7 mAh g⁻¹ after 1500 cycles with a retention rate of 66% at 1C. This work provides a practical strategy to increase the Li-ion capacity and cycle stability by tailoring the crystal orientation and nanostructures.