Formation and growth mechanism of TiC crystal in TiC_p/Ti composites

1　ＩＮＴＲＯＤＵＣＴＩＯＮＰａｒｔｉｃｌｅｓｒｅｉｎｆｏｒｃｅｄｔｉｔａｎｉｕｍａｌｌｏｙｍａｔｒｉｘｃｏｍｐｏｓｉｔｅｓ(ＴＭＣｐ)ｈａｖｅｗｉｄｅａｐｐｌｉｃａｔｉｏｎｆｉｅｌｄｓｆｏｒｔｈｅｉｒａｔｔｒａｃｔｉｖｅｈｉｇｈｓｐｅｃｉｆｉｃｓｔｒｅｎｇ     

超高分子量聚乙烯的辐照效应

通过密度测定和ＤＳＣ热分析，观测了超高分子量聚乙烯的辐射效应。实验结果表明：在吸收剂量０—１．１３ＭＧｙ范围内，密度随吸收剂量的增加而增大，熔化热和熔点也有所增加，特别是在低剂量范围内增加十分明显。以上结果都说明，超高分子量聚乙烯在辐照过程中，结晶在完善或有新的结晶形成     

Asymmetric dilation of multiwavelength cross-connect switches forlow-crosstalk WDM optical networks

We predict that, for wavelength division multiplexing optical-network applications, an asymmetrically dilated configuration of a 2×2 cross-connect is significantly better in terms of overall crosstalk when the levels of the bar-port crosstalk and the cross-port crosstalk are significantly different from each other, as is the case with optical-frequency filters which utilize grating-assisted coupling. As a verification, we present a simulation study with 2×2 polarization-diversified acousto-optic tunable filters. We present a recursive method to extend the principle of asymmetric dilation to larger-size cross-connect switches, and make a recommendation for an asymmetrically dilated 4×4 cross-connect configuration     

NMOS器件两次沟道注入杂质分布和阈电压计算

分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压，文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。     

深亚微米MOSFET衬底电流的模拟与分析

利用器件模拟手段对深亚微米ＭＯＳＦＥＴ的衬底电流进行了研究和分析，给出了有效的道长度，栅氧厚度，源漏结深，衬底掺杂浓度以及电源电压对深亚微米ＭＯＳＦＥＴ衬底电流的影响，发现电源电压对深亚微米ＭＯＳＦＥＴ的衬底电流有着强烈的影响，热载流子效应随电源电压的降低而迅速减小，当电源电压降低到一定程度时，热载流子效应不再成为影响深亚微米ＭＯＳ电路可靠性的主要问题。     

A model for evaluation and administration of security inobject-oriented databases

The integration of object-oriented programming concepts with databases is one of the most significant advances in the evolution of database systems. Many aspects of such a combination have been studied, but there are few models to provide security for this richly structured information. We develop an authorization model for object-oriented databases. This model consists of a set of policies, a structure for authorization rules, and algorithms to evaluate access requests against the authorization rules. User access policies are based on the concept of inherited authorization applied along the class structure hierarchy. We propose also a set of administrative policies that allow the control of user access and its decentralization. Finally, we study the effect of class structuring changes on authorization     

醇镁还原法一步制取对氯苯胺的研究

醇镁还原法一步制取对氯苯胺是一种新的方法 ,研究发现最佳反应温度为 80℃～ 85℃ ,反应时间为4h ,对氯硝基苯与镁粉的用量 (物质的量比 )为 1∶3,产率为 80 %。     

Conductive Mechanism of Organic Conductor

Organic conductor is a kind of organic compound which has special electronic and magnetic properties. The research of the organic compounds has received considerable attention because of their potential applications in many areas. The molecular conductive units are theoretically investigated as well as their energy gap and charge distribution. The relationship of conductivity and micro-mechanism is discussed.     

新型高k栅介质材料研究进展

随着半导体技术的不断发展，MOSFET（metal-oxide-semiconductor field effect transistor）的特征尺寸不断缩小，栅介质等效氧化物厚度已小至nm数量级。这时电子的直接隧穿效应将非常显著，将严重影响器件的稳定性和可靠性。因此需要寻找新型高k介质材料，能够在保持和增大栅极电容的同时，使介质层仍保持足够的物理厚度来限制隧穿效应的影响。本文综述了研究高k栅介质材料的意义；MOS栅介质的要求；主要新型高k栅介质材料的最新研究动态；展望了高k介质材料今后发展的主要趋势和需要解决的问题。     

8Li次级束的产生

在北京串列加速器次级束流线上通过2 H(7Li,8Li) 1H逆运动学反应产生了用于核天体物理研究的8Li次级束。准直后的次级束纯度达到 80 %以上 ,对于 44MeV的7Li强度约为 3 0s- 1·pnA- 1,可以用来进行逆几何转移反应的实验测量。