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101.
102.
Li Chen Xiaoniu Fu Jushui Lai Jian Sun Zhifeng Ying Jiada Wu Ning Xu 《Journal of Electronic Materials》2012,41(7):1941-1947
CdS nanoneedles have been grown on Ni-coated Si (100) substrates by pulsed laser deposition. Substrate temperature and Ni-catalyst layer thickness were found to have great effects on the density and morphology of the as-grown CdS nanoneedles. Crystalline CdS nanoneedles with middle diameter and length of about 40?nm to 100?nm and 400?nm to 1000?nm, respectively, could be obtained at 350°C to 450°C on Ni-coated silicon (100) substrates, and nanoneedles with good shapes were obtained at 400°C substrate temperature. From the cross-section morphologies, it was found that the CdS nanoneedles grew out of the base CdS crystallite layer with thickness of about 500?nm. Based on the experimental results, vapor?Csolid and vapor?Cliquid?Csolid growth modes describe the CdS nanoneedle growth. 相似文献
103.
Yinggao Yue Jianqing Li Hehong Fan Qin Qin Le Gu Li Du 《Wireless Personal Communications》2017,97(3):3277-3292
There exist several applications of wireless sensor networks in which the reliable operation can be crucial. Fault prediction is a critical problem in reliability theory for ribbon wireless sensor networks (RWSNs). Accurate fault prediction can effectively improve the availability of the WSNs system. In this paper, we evaluated the network performance for RWSNs, studied the basic theory of kernel functions, proposed a new failure prediction method based on kernel function, and selected the radial basis function as kernel function failure prediction models from two aspects of node hardware failures and network failures for fault prediction. Theoretical evidence and experimental results have shown that the proposed algorithmic prediction method has higher accuracy of 12 and 15% than that of GRNN and PNN respectively. Finally, we provided extensive numerical results to demonstrate the usage and efficiency of the proposed algorithms and complement our theoretical analysis. 相似文献
104.
In this paper, we propose a novel large deformation diffeomorphic registration algorithm to align high angular resolution diffusion images (HARDI) characterized by orientation distribution functions (ODFs). Our proposed algorithm seeks an optimal diffeomorphism of large deformation between two ODF fields in a spatial volume domain and at the same time, locally reorients an ODF in a manner such that it remains consistent with the surrounding anatomical structure. To this end, we first review the Riemannian manifold of ODFs. We then define the reorientation of an ODF when an affine transformation is applied and subsequently, define the diffeomorphic group action to be applied on the ODF based on this reorientation. We incorporate the Riemannian metric of ODFs for quantifying the similarity of two HARDI images into a variational problem defined under the large deformation diffeomorphic metric mapping framework. We finally derive the gradient of the cost function in both Riemannian spaces of diffeomorphisms and the ODFs, and present its numerical implementation. Both synthetic and real brain HARDI data are used to illustrate the performance of our registration algorithm. 相似文献
105.
无极灯是一种新型绿色光源,因其独特的优点正逐步得到推广。文章回顾了无极灯的发光原理,分析了传统高频无极灯驱动装置采用分立元件设计带来的缺点,提出了一种新型的基于IC驱动的高频无极灯驱动装置,并给出了设计模块的原理图。经过测试,本方案给出的驱动装置可以稳定高效地驱动高频无极灯并应用于实际。 相似文献
106.
107.
An AIGaN-based back-illuminated ultraviolet p-i-n detector is designed and its performance is analysed both simulately and experimentally. The width of p- and i-regions has been optimized to the best theoretic values. It is indicated that the changing of responsivity with increase of bias can not be attributed to the expansion of depletion layer as it is believed, but to two reasons: 1) the effect of GaN/AlGaN heterojunction barrier to block the electrons decreases with higher bias and 2) the recombination rate of excess carriers decreases due to the building up of an electric field in depletion region. At zero bias, the simulated responsivity reaches its maximum of 0.12 A/W with quantum efficiency of 55.1%. The measured peak responsivity is more than 0.09 A/W with quantum efficiency greater than 41.6%. The experimental data are almost consistent with the results of the simulation. 相似文献
108.
本文论述了利用安捷伦的DDR分析软件去解决传统示波器分析DDR信号不足,并详细剖析了DDR分析Read和Write周期信号的变化情况。 相似文献
109.
110.
基于GaAs材料和器件的制造工艺,介绍了纳米膜隧穿器件和微陀螺的结构设计方法和工艺加工方法。阐述了基于纳米膜隧穿效应微陀螺的工作原理,对纳米膜隧穿器件和微陀螺的结构进行了设计,分析了微陀螺的模态频率设计和匹配仿真。采用反应离子刻蚀(RIE)刻蚀和感应耦合等离子体(ICP)刻蚀方法分别对隧穿器件和微陀螺结构进行了加工,利用扫描电镜观测,加工结果较好。利用冲击信号测试了微陀螺的频率响应,讨论了微陀螺的模态频率测试结果和匹配情况,证明微陀螺在驱动方向和检测方向上能够工作且模态频率匹配程度较好。实验结果表明,提出的GaAs材料微陀螺结构设计方法和工艺加工方法是可行的,能够应用于GaAs基微陀螺结构设计与制造。 相似文献