基于散射中心模型的舰船LFM雷达回波仿真

关于雷达回波的模拟,目前研究最多的是简单场景下点目标模型的回波仿真。针对复杂的海情背景,提出用散射中心模型仿真舰船目标LFM雷达回波的方法。首先模拟了弹道轨迹及舰船摆动,然后利用2D-ESPRIT算法提取出舰船的二维散射中心位置分布及其类型参数,并推导出舰船的散射中心回波模型。该回波模拟方法不仅流程清晰、完整,而且仿真场景复杂、回波结果逼真度好。最后用MATLAB仿真分析了舰船的LFM雷达回波及其一维距离像,验证了模型的正确性和实用性。     

基于J2EE的综合营业系统的设计

文中主要介绍了综合营业系统的设计过程，系统设计采用了J2EE技术，运用MVC的设计思想，通过Struts实现系统架构，简化了软件的开发，提高了软件的灵活性、可扩展性和重用性。     

808nm高效率激光二极管

目前808nm高效率激光二极管产品的转换效率只有50%左右,还有很大的提升空间。通过提高欧姆接触层浓度、界面渐变和波导层掺杂等方面的外延材料结构优化,减小附加电压和电阻值,设计制作了808nm大光腔应变量子阱外延材料;并制作了200μm发光区标准单管,提取了材料内部参数,材料内损耗iα为0.67cm-1,内量子效率iη为0.88;将圆片解理成2mm腔长的巴条进行腔面镀膜,并烧结成标准单管,25℃下单管电光效率达到61.1%;将巴条烧结到微通道载体上,制作成标准微通道水冷单条阵列,水温15℃110A下输出光功率126.6W,电光转换效率62.77%。     

矩形集成电路半解析热分析软件--BJX热分析软件的研制

半解析热分析法具有解析法的高精度，又具有数值法的较宽适用范围。编制出的计算软件具有分析时间短、操作简便、成本低廉等优点，可能成为下一代集成电路实际使用的热分析软件。     

功率电子器件用AlN陶瓷基板的研制

阐述了AlN陶瓷的烧结原理 ,分析了烧结工艺参数对大面积AlN基板性能的影响 ,成功研制出了高热导率(190W /m·K)、大面积 (14 0mm× 90mm)、翘曲度为 2 0 μm/5 0mm的AlN陶瓷基板。     

夹竹桃对钉螺肝损伤的超微结构观察

钉螺经夹竹桃叶水浸液处理后，用扫描电镜和透射电镜分别观察了其肝表面及肝细胞结构的变化。处理后的肝表肿胀，明显的沟纹消失，其上的孔隙破损；24h后肝细胞核肿胀，核仁消失，核质稀疏，内质网断裂，线粒体增多，且随处理时间的延长（48h），损伤加重，内质网几乎全部囊泡化，细胞核开始破裂，线粒体也破裂。文中也讨论了钉螺可能致死的原因，为探明夹竹桃对钉螺的损伤程度和灭螺机制提供了亚显微结构依据。     

多通道俄制军用串行总线FPGA的IP核设计

介绍了俄罗斯军用标准ΓОСТ18977和PTM1495.重点进行了IP核总体设计,收发通道和CPU接口的详细设计,通过设置控制、状态等多功能寄存器实现各通道独立工作,软件设计采用状态机保证了协议通信的正确性,并在Quartus Ⅱ 5.0集成开发环境下予以实现.经验证用本方法设计的IP核能很好地实现8通道同时收发的功能,且各个通道能独立设置通信频率、奇偶校验等,解决了以往该类芯片通道少、功能单一的缺点.     

Texture investigation of copper interconnects with a different line width

To understand the effect of line width on textural and microstructural evolution of Cu damascene interconnect, three Cu interconnects samples with different line widths are investigated. According to x-ray diffraction (XRD) results, the (111) texture is developed in all investigated lines. Scattered {111}〈112〉 and {111}〈110〉 texture components are present in 0.18-μm-width interconnect lines, and the {111}〈110〉 texture was developed in 2-μm-width interconnect lines. The directional changes of the (111) plane orientation with increased line width were investigated by XRD. In addition, microstructure and grain-boundary character distribution (GBCD) of Cu interconnect were measured using electron backscattered diffraction (EBSD) techniques. This measurement demonstrated that a bamboo-like microstructure is developed in the narrow line, and a polygranular structure is developed in the wider line. The fraction of ∑3 boundaries is increased as the line width increases but is decreased in the blanket film. A new interpretation of textural evolution in damascene interconnect lines after annealing is suggested, based on the state of stress and growth mechanisms of Cu deposits.     

Electric field enhanced nanocrystal formation in thermally poled optical fibres

High-resolution scanning electron microscopy has been utilised to characterise the structural change in optical fibres after being thermally poled. A layer of nanometre-sized crystals has been found 5.5 /spl mu/m beneath the anode surface. The strong electric field formed under the anode is believed to have enhanced the nucleation process.     

Nanoscale structural characteristics and electron field emission properties of transition metal–fullerene compound TiC60 films

Transition-metal compound TiC₆₀ thin films were grown by co-deposition from two separated sources of fullerene C₆₀ powder and titanium. Study of structural properties of the films, by Raman spectroscopy, atomic force microscopy, and scanning tunneling spectroscopy reveals that the films have a deformed C₆₀ structure with certain amount of sp³ bonds and a rough surface with a large number of nanoclusters. z–V tunnelling spectroscopic measurements suggest that several charge transport mechanisms are involved in as the tip penetrates into the thin film. Conventional field electron emission (FEE) measurements show a high emission current density of 10 mA/cm² and a low turn-on field less than 8 V/μm, with the field enhancement factors being 659 and 1947 for low-field region and high-field region, respectively. By exploiting STM tunneling spectroscopy, local FEE on nanometer scale has also been characterized in comparison with the conventional FEE. The respective field enhancement factors are estimated to be 99–355 for a gap varying from 36 to 6 nm. The enhanced FEE of TiC₆₀ thin films can be ascribed to structural variation of C₆₀ in the films and the electrical conducting paths formed by titanium nanocrystallites embedded in C₆₀ matrix.