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81.
碳纳米管场发射冷阴极的低温制备及场发射性能 总被引:1,自引:0,他引:1
利用纳米银的低温熔接性和良好导电性,研究了以纳米银取代传统的有机粘结剂和导电银浆制备CNTs场发射冷阴极的新工艺.将CNTs、纳米银、粘性松油醇和有机溶剂混合研磨后涂敷在镀Cu玻璃基片上,250℃烧结30min后,纳米银颗粒之间互相熔接,将周围的CNTs粘结成为整体膜,形成了表面平整、导电性和场发射性能良好的CNTs阴极.测量了不同纳米银掺入量的CNTs阴极的场发射性能,结果表明:当CNTs:Ag质量比率为1:1时,CNTs阴极具有最好的场发射性能,阈值电场为4.9V/μm,当电场强度为5.7V/μm时,场发射电流密度为41mA/cm2.纳米银比例过大,烧结后CNTs被熔接的银膜覆盖,高电压时场发射电流明显下降,而纳米银掺入量太少则会导致CNTs阴极的附着力和导电性变差. 相似文献
82.
In colloidal suspensions of silica, particles undergo constant collisions. By controlling various parameters, the repulsive barrier can be reduced, thereby substantially increasing the number of collision‐induced dimerization events. Xia and co‐workers report on p. 1627 that the dimers could be arrested and then permanently fixed by introducing a small amount of fresh tetraethylorthosilicate into the colloidal suspension, with monodisperse dimer yields of up to 50 %. This yield could be increased to 80 % by centrifugation in a density gradient medium. When fresh tetraethylorthosilicate is introduced into a colloidal suspension of silica spheres, it hydrolyzes and condenses in situ to arrest and fix the dimers resulting from constant collisions between the spheres. By optimizing the experimental parameters (including the length of aging time) and the diameter of the silica spheres, as well as the concentrations of counterions, water, and ammonia, it is possible to routinely produce monodisperse dimers with a yield as high as 50 %. When combined with centrifugation using a density gradient medium, the yield of such dimers could be further increased to 80 %. It is believed that this method will provide a simple and versatile approach to the high‐volume production of dimers from spherical colloids composed of different materials. These dimers may find widespread use in a range of applications such as fabrication of photonic crystals and fundamental studies related to colloidal science. 相似文献
83.
本文介绍了降温水循环泵恒压供水变频改造的特点及变频控制系统与DCS控制应用于降温水循环泵变频调速控制的基本情况。 相似文献
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为提高钛合金表面力学性能,利用钛合金基体与TiB2粉末之间的原位反应,在TC4钛合金表面激光熔覆原位制备了TiB陶瓷涂层。采用扫描电镜(SEM)和X射线衍射仪(XRD)分析了熔覆层的形貌、显微组织与陶瓷相分布,并用硬度计测试了显微硬度。结果表明,在实验优化的工艺参数下,可制备出无气孔、无裂纹与表面质量较好的熔覆层。熔覆层的显微组织由表及里从块状颗粒转变为细针状组织;TiB2陶瓷相由表及里逐渐减少,而TiB陶瓷相由表及里逐渐增多;熔层表面显微硬度高,并由表及里呈现出梯度变化。 相似文献
88.
Nanoparticles of the Lead-free Solder Alloy Sn-3.0Ag-0.5Cu with Large Melting Temperature Depression
Chang Dong Zou Yu Lai Gao Bin Yang Xin Zhi Xia Qi Jie Zhai Cristina Andersson Johan Liu 《Journal of Electronic Materials》2009,38(2):351-355
Due to the toxicity of lead (Pb), Pb-containing solder alloys are being phased out from the electronics industry. This has
lead to the development and implementation of lead-free solders. Being an environmentally compatible material, the lead-free
Sn-3.0Ag-0.5Cu (wt.%) solder alloy is considered to be one of the most promising alternatives to replace the traditionally
used Sn-Pb solders. This alloy composition possesses, however, some weaknesses, mainly as a result of its higher melting temperature
compared with the Sn-Pb solders. A possible way to decrease the melting temperature of a solder alloy is to decrease the alloy
particle size down to the nanometer range. The melting temperature of Sn-3.0Ag-0.5Cu lead-free solder alloy, both as bulk
and nanoparticles, was investigated. The nanoparticles were manufactured using the self-developed consumable-electrode direct
current arc (CDCA) technique. The melting temperature of the nanoparticles, with an average size of 30 nm, was found to be
213.9°C, which is approximately 10°C lower than that of the bulk alloy. The developed CDCA technique is therefore a promising
method to manufacture nanometer-sized solder alloy particles with lower melting temperature compared with the bulk alloy. 相似文献
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90.
NAND flash chips have been innovated from two-dimension (2D) design which is based on planar NAND cells to three-dimension (3D) design which is based on vertical NAND cells. Two types of NAND flash technologies–charge-trap (CT) and floating-gate (FG) are presented in this paper to introduce NAND flash designs in detail. The physical characteristics of CT-based and FG-based 3D NAND flashes are analyzed. Moreover, the advantages and disadvantages of these two technologies in architecture, manufacture, interference and reliability are studied and compared. 相似文献