Texture characterization of Cu interconnects with different Ta-based sidewall diffusion barriers

X-ray diffraction is used to assess the texture of narrow lines and study the impact of different sidewall diffusion barrier materials. All the Ta-based barriers developed a strong 〈1 1 1〉 texture in the scaled geometry, with little effect from sidewall growth. Comparisons were made with blanket wafers, demonstrating the pined grain structure in the narrow lines and contrasting change in texture due to re-crystallization in the unconstrained film. Furthermore, patterned lines showed significant anti-symmetric plane distribution influenced by high strains and twinning along the lines.     

Smoothing spectral power distribution of daylights

CIE Division 1 entrusted TC 1–74 to investigate the possibility to develop a smooth curve version of the D illuminants. This article investigates the possibility to create such smoothed curves with minimal colorimetric error. Six different smoothing algorithms were investigated; the best method, using a locally weighted regression and smoothing algorithm, enabled a smooth function, where the worst colour difference for a 100 000 sample set was less than ΔE_ab^* = 0.5, comparing calculations using the CIE standard daylight spectrum and the smoothed function. Thus, the smoothed function can be recommended for redefining the daylight spectra for colorimetry without loosing continuity to results using the current calculation tables and for designing daylight simulator spectra. © 2012 Wiley Periodicals, Inc. Col Res Appl, 38, 316–321, 2013     

On the formation of blisters in annealed hydrogenated a-Si layers

Differently hydrogenated radio frequency-sputtered a-Si layers have been studied by infrared (IR) spectroscopy as a function of the annealing time at 350°C with the aim to get a deeper understanding of the origin of blisters previously observed by us in a-Si/a-Ge multilayers prepared under the same conditions as the ones applied to the present a-Si layers. The H content varied between 10.8 and 17.6 at.% as measured by elastic recoil detection analysis. IR spectroscopy showed that the concentration of the clustered (Si-H)_n groups and of the (Si-H₂)_n (n ≥ 1) polymers increased at the expense of the Si-H mono-hydrides with increasing annealing time, suggesting that there is a corresponding increase of the volume of micro-voids whose walls are assumed from literature to be decorated by the clustered mono-hydride groups and polymers. At the same time, an increase in the size of surface blisters was observed. Also, with increasing annealing time, the total concentration of bonded H of any type decreases, indicating that H is partially released from its bonds to Si. It is argued that the H released from the (Si-H)_n complexes and polymers at the microvoid surfaces form molecular H₂ inside the voids, whose size increases upon annealing because of the thermal expansion of the H₂ gas, eventually producing plastic surface deformation in the shape of blisters.     

Interactions and Chemical Transformations of Coronene Inside and Outside Carbon Nanotubes

By exposing flat and curved carbon surfaces to coronene, a variety of van der Waals hybrid heterostructures are prepared, including coronene encapsulated in carbon nanotubes, and coronene and dicoronylene adsorbed on nanotubes or graphite via π–π interactions. The structure of the final product is determined by the temperature of the experiment and the curvature of the carbon surface. While at temperatures below and close to the sublimation point of coronene, nanotubes with suitable diameters are filled with single coronene molecules, at higher temperatures additional dimerization and oligomerization of coronene occurs on the surface of carbon nanotubes. The fact that dicoronylene and possible higher oligomers are formed at lower temperatures than expected for vapor‐phase polymerization indicates the active role of the carbon surface used primarily as template. Removal of adsorbed species from the nanotube surface is of utmost importance for reliable characterization of encapsulated molecules: it is demonstrated that the green fluorescence attributed previously to encapsulated coronene is instead caused by dicoronylene adsorbed on the surface which can be solubilized and removed using surfactants. After removing most of the adsorbed layer, a combination of Raman spectroscopy and transmission electron microscopy was employed to follow the transformation dynamics of coronene molecules inside nanotubes.     

Study of metal barrier deposition-induced damage to porous low-k materials

A unique test structure based on a metal-insulator-semiconductor planar capacitor (Pcap) design was used to investigate several aspects of metal barrier-induced low-k damage. A special term called Effective Damage Thickness was introduced to describe the degree of damage. Ta(N) barrier was deposited on various dielectric films with porosity up to 32%. It has been found that the Effective Damage Thickness increases as the porosity increases. The damage is influenced more by the porosity of low-k films than the film density. Furthermore, the damage was modulated by Ta(N) deposition conditions. More damage was observed when higher target and/or substrate bias power was used, suggesting that the ion energy of the barrier material plays an important role in the low-k damage mechanism. A same degree of damage was observed for Ta barrier as for Ta(N), suggesting that Ta(N) deposition-induced low-k damage was primarily caused by Ta ions not nitrogen. Impact of Ru(Ta) and Cu(Mn) self forming barrier on low-k damage was also investigated. Among all the barriers studied in this work, the Ta-based barriers caused the most damage while the Cu(Mn) self forming barrier had the least damage to the low-k. The atomic masses for Ta, Ru, and Cu are 181, 101, and 64, respectively, corresponding with the observed degree of damage in the low-k material.     

Impact of “terminal effect” on Cu electrochemical deposition: Filling capability for different metallization options

The 300 mm wafer copper electrochemical deposition (ECD) process for dual damascene metallization of semiconductor advanced interconnects is critically reviewed and the breakthroughs that enable further scaling of this process are examined. Special emphasis is placed on analyzing the critical issues, such as barrier/seed options, terminal effect and future plating prospects for this technology. The smallest plateable feature size values are estimated for different metallization integration schemes, such as conventional Physical Vapor Deposited (PVD) TaN/Ta/Cu, hybrid RuTa/Cu, CuMn (8%) self-forming barrier/seed, and Plasma-Enhanced Atomic Layer Deposition (PEALD) Ru, limiting the allowed maximum sheet resistance to 14 Ohms/sq for the Cu-based seeds and the effective maximum filling aspect ratio to 5-6.     

In situ electrochemical impedance spectroscopy of Zr–1%Nb under VVER primary circuit conditions

Oxide layers were grown on tubular samples of Zr–1%Nb under conditions simulating those in VVER-type pressurised water reactors, viz. in near-neutral borate solutions in an autoclave at 290 °C. These samples were investigated using electrochemical impedance spectroscopy which was found to be suitable to follow in situ the corrosion process. A –CPE_oxR_ox– element was used to characterise the oxide layer on Zr–1%Nb. Both the CPE_ox coefficient, σ_ox, and the parallel resistance, R_ox, were found to be thickness dependent. The layer thickness, however, can only be calculated after a calibration procedure. The temperature dependence of the CPE_ox element was also found to be anomalous while the temperature dependence of R_ox indicates that the oxide layer has semiconductor properties. The relaxation time – defined as (R_oxσ_ox)^1/ – was found to be quasi-independent of oxidation time and temperature; thus it is characteristic to the oxide layer on Zr–1%Nb.     

Process enhanced ultimate safety with the Geyser system

A unique approach to attain enhanced, natural safety at low costs is given with a new, low temperature, low power level, nuclear energy plant of advanced design: the Geyser. The Geyser District Heating Nuclear Energy Plant (GDHNEP) and an ordinary low-temperature steam-cycle, the Geyser Thermal Energy Converter (GTEC), represent together a system possessing of remarkable features. Estimates project, that relatively small district heating plants distributed over a district heating network, or operating autonomously, would be cost effective. As a co-generation device the Geyser system may supply ample heating power and/or electricity opening new alternatives.