Cold forging and chemical heat treatment of the casing of the internal joint for VAZ cars

The technological process of cold forging applied for the first time in the production of the casing of the internal joint with races is described. The process operations of cold forging and the annealing and carburizing regimes for this part me described.     

Afterburner [network-independent card for protocols]

Many current implementations of protocols such as the Transmission Control Protocol/Internet Protocol (TCP/IP) are inefficient because data are often accessed more frequently than necessary. Three techniques that reduce the need for memory bandwidth are proposed. The techniques are copy-on-write, page remapping, and single-copy. Afterburner, a network-independent card that provides the services that are necessary for a single-copy protocol stack, is described. The card has 1 MByte of local buffers and provides a simple interface to a variety of network link adapters, including HIPPI and asynchronous transfer mode (ATM). Afterburner can support transfers to and from the link adapter card at rates up to 1 Gbit/s. An implementation of TCP/IP that uses the features provided by Afterburner to reduce the movement of data to a single copy is discussed. Measurements of the end-to-end performance of Afterburner and the single-copy implementation of TCP/IP are presented     

Neutron-activation determination of elements with overlapping resonances in neutron-absorption cross sections

Translated from Atomnaya Énergiya, Vol. 66, No. 6, pp. 423–424, June, 1989.     

Use of166mHo for calibration of gamma-ray spectrometers with semiconductor detectors

Translated from Atomnaya Énergiya, Vol. 67, No. 3, pp. 215–216, September, 1989.     

Changes in Lake Ontario Total Phosphorus Concentrations 1976–1978

An apparent decrease in total phosphorus concentrations of approximately 4.l μgP/L has been reported recently for the spring values of 1977 and 1978 in Lake Ontario. Investigation of the loading reduction for this period independent of sedimentation factors can account for only 10% of the change. The results indicate that changes in the sedimentation rate of total phosphorus during this period offer an explanation for the majority of the change in concentration.     

Fast algorithms for estimating the correlation functions of large signals

A fast algorithm is proposed for estimating the auto- and cross-correlation functions of a large signal. The algorithm is based on the sectioning method by the fast Fourier transform. We determine the optimal length of the portion of data read from external memory into RAM which achieves T_min—a minimum processing time. An estimate of T_min is obtained.Translated from Kibernetika, No. 3, pp. 78–81, May–June, 1991.     

Performance engineering and topological design of metro WDM opticalnetworks using computer simulation

This paper demonstrates the use of computer simulation for topological design and performance engineering of transparent wavelength-division multiplexing metropolitan-area networks. Engineering of these networks involves the study of various transport-layer impairments such as amplifier noise, component ripple, chirp/dispersion, optical crosstalk, waveform distortion due to filter concatenation, fiber nonlinearities, and polarization effects. A computer simulation methodology composed of three main simulation steps is derived and implemented. This methodology obtains performance estimations by applying efficient wavelength-domain simulations on the entire network topology, followed by time-/frequency-domain simulations on selected paths of the network and finally Q-budgeting on an identified worst case path. The above technique provides an efficient tool for topological design and network performance engineering. Accurate simulation models are presented for each of the performance impairments, and the computer simulation methodology is used for the design and engineering of a number of actual metro network architectures     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs