“Metallisation” of oxide surfaces observed by in situ high-resolution electron microscopy

Intense irradiation (25–40 A/cm²) at intermediate energy (400 keV) has been found to cause “metallisation” of tungsten oxide and titanium niobate crystal surfaces. The possible mechanisms and the likely consequences for high-resolution imaging of clean oxide surfaces are briefly discussed.     

Half-bridge inverter using 4H-SiC gate turn-off thyristors

This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm²) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices     

Contents

This article explains the basic issues that are facing the global community regarding the emission of carbon dioxide (CO/sub 2/) gas that is degrading our environment and, most significantly, the environment of generations to come. This article deals with the current state of a potential international agreement to curtail greenhouse gases and the subsequent underlying issues. A theory suggests that apparent reluctance to agree to an international treaty by the United States is directly tied to the process of electric utility reforms. The proposed Kyoto Treaty is explained as well as the consequences of its implementation. The current facts surrounding electric utility generation and CO/sub 2/ gas emissions are explained, as are some mitigation efforts.     

Performance and modeling of advanced Ti:LiNbO3 digitaloptical switches

High-performance Y-branch digital optical switches realized in Ti:LiNbO₃ are presented. Their switching response functions have been optimized in terms of switch voltage and crosstalk ratio. The optimization is based on analyzing different types of waveguide shaping and switching arrangements using coupled mode theory and computer simulations. Excellent switching characteristics are achieved with devices exploiting a specially shaped waveguide branch in a dilated switch arrangement. Demonstrated performances include switching voltage as low as 9 V with crosstalk suppression better than 45 dB and fiber-to-fiber losses as low as 4 dB. Polarization independence with crosstalk suppression better than 40 dB over a 1520- to 1570-nm wavelength range is achieved for any applied switch voltage greater than 18 V. These optimized digital optical switches have further demonstrated the capability to reshape electrical input signals at switching rates of several hundred megahertz