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941.
A very important characteristic of coking coal is its clinkering ability, i.e., its ability to form a nonvolatile solid residue, consisting of disparate grains, on heating in specific conditions. The clinkering ability of the coal is determined by the properties of its plastic mass. Various methods may be used to evaluate the plastic-ductile properties of the coal. However, since the 1930s, the main method used to evaluate the clinkering properties of coal, within the nations of the former Soviet Union, has been the Sapozhnikov-Bazilevich plastometric method, because it provides more information than competing approaches. For the same reason, the thickness of the plastic layer, which is one of the parameters determined by this method, is used for coal classification in State Standard GOST 25543-88 (Lignite, Coal, and Anthracite: Genetic and TEchnological Classification) and its Ukrainian counterpart DSTU 3472-96 (Lignite, Coal, and Anthracite: Classification). This explains the strict requirements on the accuracy and reliability of the plastometric characteristics. 相似文献
942.
I. L. Shkarupa L. A. Plyasunkova A. A. Ulanovskii 《Refractories and Industrial Ceramics》2008,49(4):272-276
Results are provided for a study of the microstructure of ceramics from four different producers by means of a scanning electron
microscope and x-ray microanalysis. Results show that ceramic specimens often do not correspond to claimed parameters. The
main disadvantages are ceramic structural inhomogeneity, presence of phases of a different nature, intergranular pores and
cracks, and alkali impurities. The ceramics of only one producer correspond to the main parameters for this class, and this
is provided by high production technology and starting material quality.
Translated from Novye Ogneupory, No. 7, pp. 31–35, July 2008. 相似文献
943.
A technique is proposed for introducing microdoses (10?5–10?10 g) of germanium and indium metals into semiconductor compounds by coulometric titration in a solid electrolyte cell. The solid electrolytes that are reversible with respect to germanium cations (the GeSe-GeI2 system containing 5 mol % GeI2) and indium cations (the InCl3-MgCl2 system containing 15 mol % MgCl2, the InCl3-CdCl2 system containing 1.5 mol % CdCl2, and the In2S3-InCl3 system containing 5 mol % InCl3) are chosen, and their electric transport properties are characterized. The optimum conditions for electrochemical doping (temperature, current density), under which the current efficiency reaches 90–100%, are determined. The doping with germanium and indium is performed for nonstoichiometric compounds, such as lead monotelluride, indium sulfide, and ternary chalcogenide spinel Cd1 ± δCr2Se4. The doping efficiency is controlled by measuring the electromotive force of the corresponding electrochemical cells and the Hall effect, as well as using the electrical conductivity method. The solid electrolytes that are reversible with respect to indium are used to determine the standard Gibbs energies of formation of a number of indium-containing semiconductors. 相似文献
944.
To gain a better understanding of the ultra-high molecular weight polyethylene (UHMWPE) wear mechanism in the physiological environment, the effects of protein and lipid constituents of synovial fluid on the specific wear rate of UHMWPE were examined experimentally. The multidirectional sliding pin-on-plate wear tester was employed to simulate the simplified sliding condition of hip joint prostheses. Bovine serum γ-globulin and synthetic l--DPPC were used as model protein and lipid constituents of synovia, respectively. Results of the wear test indicated that the UHMWPE wear rate primarily depended on the protein concentration of the test lubricant. Lipids acted as a boundary lubricant and reduced polyethylene wear in the low protein lubricants. However, the polyethylene wear rate increased with increasing lipid concentrations if the protein concentration was within the physiological level. Increased interactions between protein and lipid molecules and lipid diffusion to polyethylene surface might be responsible for the increased wear. 相似文献
945.
Becker-Gomez A. Lakshmi Viswanathan T. Viswanathan T.R. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2008,55(7):609-613
946.
Steensgaard J. Zhiqing Zhang Wenhuan Yu Sarhegyi A. Lucchese L. Dae-Ik Kim Temes G.C. 《IEEE transactions on circuits and systems. I, Regular papers》2008,55(5):1289-1296
Incremental data converters (IDCs) are useful in instrumentation and measurement applications, where low-frequency analog signals need to be converted into digital form with high accuracy and low power dissipation. They are particularly well suited for applications where a single analog-digital converter is multiplexed between many channels. This paper proposes an exact design methodology for IDCs, which optimizes the signal-to-noise ratio of the converter under practical design constraints. The process also allows the designer to apportion the noise budget in an arbitrary manner between thermal and quantization noise. The design process is illustrated by an example which describes the optimization of a third-order multiplexed IDC. 相似文献
947.
N. N. Zalogin A. V. Sknarya 《Journal of Communications Technology and Electronics》2008,53(10):1233-1239
The problems related to digitization of sonar compound analog sounding signals reflected from a target are considered. With the use of mathematical simulation, it is shown that, in the case of the most efficient Kotel’nikov digitization, errors occur that impede correct correlation signal processing. This difficulty can be overcome via a reduction of the sampling interval by a factor of 2 to 4 relative to the interval proposed by Kotel’nikov. 相似文献
948.
It is shown that, at thermodynamic equilibrium, the release of charge carriers from the localized states of bistable amphoteric centers into quasi-free states depends on the degree of compensation. This brings about different functional dependences of the concentration of free charge carriers on temperature. It is found that, in uncompensated semiconductors, the concentration of free charge carriers follows the same dependence in the case of bistable amphoteric centers and bistable amphoteric U ? centers, although the distributions of charge carriers over the charge states and configurations are different for these types of centers. The results can be used for interpreting various experimental data insufficiently explained in the context of the traditional approach. 相似文献
949.
V. N. Jmerik A. M. Mizerov T. V. Shubina A. V. Sakharov A. A. Sitnikova P. S. Kop’ev S. V. Ivanov E. V. Lutsenko A. V. Danilchyk N. V. Rzheutskii G. P. Yablonskii 《Semiconductors》2008,42(12):1420-1426
Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells. Structural and optical properties of the Al x Ga1 ? x N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al2O3 substrates, heterostructures for light-emitting diodes with Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm. 相似文献
950.