Coupled-mode theory of overmoded cylindrical metal bragg-reflectors

A coupled-mode theory of overmoded, cylindrical metal Bragg-reflectors is presented. The first-order Bragg coupling constants are derived for TE → TE, TM → TM, TE → TM, and TM → TE mode conversions. Reflectivities and transverse modeQ-factors are computed for a Bragg-reflector resonator. The results illustrate important competition effects between nearly-degenerate-transverse-modes occurring within both the Bragg-reflectors and the resonator.     

Convective transfer processes in chemically stable and reacting liquids with an internal structure

Dynamic processes are studied in media with softly and hardly internal destroyable configurations. A method is examined for the measurement of properties of media with spatial separation of the chemical transformation stages and thermal hydrodynamic measurements.Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 53, No. 5, pp. 781–789, November, 1987.     

Effect of surface treatment on segregation of impurities in haematite

Surface segregation of various impurities such as Mg, Si, Ca, Al and Cr were determined for the haematite phase (Fe₂O₃) annealed in two different gas compositions involving (1) air at 1173 K, and (2) a gas mixture containing sulphur at 773 K. The objective of work was to establish the effect of the gas-phase composition on segregation of lattice defects. The near-surface segregation profiles of the impurities were determined by secondary ion mass spectrometry. The depth profile analysis was made by sputtering using an Ar⁺ primary beam of energy 30 keV. The surface charge was neutralized by an electron gun. It was found that annealing Fe₂O₃ under a gas phase containing sulphur resulted in the formation of an Fe(SO₄)₃ surface layer. It was observed that the two surface treatment procedures applied (both with and without sulphur) result in Mg enrichment in the near-surface region of Fe₂O₃. Si and Ca exhibit an enrichment and impoverishment after the surface treatments 1 and 2, respectively. Finally, the near-surface layer is impoverished in Cr and Al after both types of surface treatment. Experimental results are discussed in terms of segregation driving forces of the respective elements and the possible effect of sulphur on the gas-solid heterogeneous kinetics.     

Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS technology

This paper presents results of reliability investigation of 20 V N-Drift MOS transistor in 0.13 μm CMOS technology. Due to high performances required for CMOS applications, adding high voltage devices becomes a big challenge to guarantee the reliability criteria. In this context, new reliability approaches are needed. Safe Operating Area are defined for switch, V_ds limited and V_gs limited applications in order to improve circuit designs. For V_ds limited applications, deep doping dose effects in drift area are investigated in correlation to lifetime evaluations based on device parameter shifts under hot carrier stressing. To further determine the amount and locations of hot carriers injections, accurate 2D technological and electrical simulations are performed and permit to select the best compromise between performance and reliability for N-Drift MOS transistor.     

Results of testing a centrifugal bubble singlet-oxygen generator

The results of parametric tests of a centrifugal bubble singlet-oxygen generator based on the reaction of chlorine with an alkaline hydrogen peroxide solution have been given. The utilization of chlorine grows with bubble-layer height, whereas the relative content of O₂(¹Δ) remains constant. Growth in centrifugal acceleration leads to a more efficient utilization of chlorine. A specific oxygen output of more than 1 mmole·cm⁻²·sec⁻¹ from the bubble layer for a degree of chlorine utilization of ∼95% and a singlet-oxygen yield of more than 50% has been attained. It has been shown that a centrifugal bubble singlet-oxygen generator is an efficient energy source for an oxygen-iodine laser. __________ Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 80, No. 3, pp. 121–128, May–June, 2007.     

PEEC capacitance extraction of 3-D interconnects

As feature size of electronic devices decreases, fast and accurate capacitance extraction has become increasingly critical for verification and analysis as regard as electromagnetic compatibility and signal integrity issues. The partial element equivalent circuit method is implemented for three-dimensional capacitance extraction of interconnects and very large-scale integration circuits with multiple dielectrics. The electric field coupling due to free and bound charges are analysed and modelled separately thus allowing to distinguish their contribution. The proposed approach provides physical insight, totally compatible fast methods for accelerating matrix-vector products, allows an easy treatment of lossy and dispersive dielectrics and is well suited for applying model order reduction techniques     

Fast numerically stable computation of orthogonal Fourier?Mellin moments

An efficient algorithm for the computation of the orthogonal Fourier-Mellin moments (OFMMs) is presented. The proposed method computes the fractional parts of the orthogonal polynomials, which consist of fractional terms, recursively, by eliminating the number of factorial calculations. The recursive computation of the fractional terms makes the overall computation of the OFMMs a very fast procedure in comparison with the conventional direct method. Actually, the computational complexity of the proposed method is linear O(p) in multiplications, with p being the moment order, while the corresponding complexity of the direct method is O(p²). Moreover, this recursive algorithm has better numerical behaviour, as it arrives at an overflow situation much later than the original one and does not introduce any finite precision errors. These are the two major advantages of the algorithm introduced in the current work, establishing the computation of the OFMMs to a very high order as a quite easy and achievable task. Appropriate simulations on images of different sizes justify the superiority of the proposed algorithm over the conventional algorithm currently used