金属镁中锌的测定

根据国际市场对金属镁的特殊要求,笔者探索出了一套金属镁中锌的检测方法。该方法符合国际要求,而且具有准确、高效的特点。     

直流微电网建模与稳定性分析

针对直流微电网的稳定性问题,采用状态空间法建立了直流微电网中多种变流装置及其控制系统的平均模型,并在此基础上对直流微电网进行了小扰动稳定性分析,得出了随着变流器控制参数变化的系统特征值轨迹。分析表明,当变流器的控制系数增大到一定数值时,将会出现实部为正的系统特征值,即系统不稳定。为了验证这一分析方法的可行性,又对所研究的直流微电网进行了时域仿真,得出负荷突增时不同控制系数下的时域电压曲线。仿真结果一方面验证了稳定性分析的结果,另一方面也表明,当控制系数在稳定范围内时,系数越大,则电压控制的效果也越好。由此可见,合理选择变流器的控制参数能够很好地保证直流微电网的电压稳定性。     

电站电气设备中性点接地方式的研究

分析电站中电气设备的中性点接地方式,从设备制造和供货商的角度评述并探讨托克托电厂一期工程 2× 600MW火电机组电气设备的中性点接地方式.参2     

ZN5型真空断路器使用末期维护及故障处理

通过对ZN5型真空断路器使用末期故障进行统计,并对其原因、现象进行分析,制定针对性维护措施,保证ZN5型真空断路器安全可靠运行.     

COFDM系统在非理想定时同步条件下的信道估计

该文深入研究了数字电视地面无线广播COFDM解调方案中的信道估计与内插技术,针对接收系统前端符号定时同步误差对于信道估计性能的影响,提出了两种适用于COFDM梳状导频系统的信道估计解决方案,并给出了其性能和可适用性分析。     

一种FSO网络自愈方案的研究

讨论一种高速的基于TCP/IP协议的混合快速自愈激FSO网络的实现算法,采用"本地故障本地解决"的网络拓扑控制策略,将节点间的故障在其上游节点解决。利用目前普遍使用的OSPF(OpenShort-estPathFirst)协议,加以改善移植到激光无线通信网路中,可以实现在多链路甚至多节点的网络故障下,保证传输质量的稳定。     

卫星通信协议中卷积码序列译码的计算机模拟

主要研究卫星通信协议IESS 309协议中的系统卷积码的编码及其序列译码的计算机模拟。用C语言实现了码率为1／2的36位的系统卷积码的编码，然后模拟高斯噪声信道生成一个Fano度量表，最后用Fano算法实现该卷积码的软判决序列译码，并进行了性能分析，为以后的工程应用打下一个良好的基础。     

Modeling of the code acquisition process for RAKE receivers in CDMAwireless networks with multipath and transmitter diversity

We present models for the code acquisition process in RAKE receivers. These models include multipath diversity, multiple transmitter (base station or satellite) diversity, and multiple access interference generated by other users in the network. This results in a different probability of false alarm for each cell of the code delay uncertainty region. The analysis is based on signal flow graph theory. By using these models, we elaborate different strategies for RAKE receiver synchronization and derive exact closed-form results for the average acquisition time. These strategies differ in how they organize initial (first RAKE finger) and postinitial search algorithms. If the channel is known, the initial synchronization may organize a parallel search for all fingers simultaneously by a proper set up of the local correlators' mutual delays. If not, then a serial search of different segments (partitioned among the different fingers) can be organized. In the postinitial search, sequential or random initializations are possible. A set of approximations is also included for practical applications where a quick assessment of the system performance is needed     

Prediction of loss characteristics in built-up areas with variousbuildings' overlay profiles

We continue the analysis of a probabilistic approach and the corresponding stochastic multi-parametric model of wave propagation in built-up areas with randomly distributed buildings. We concentrate on the influence of buildings' overlay profiles on signal spatial decay, and on path-loss dependence in the frequency domain within UHF/X-band urban propagation channels. Using different buildings' overlay profiles, the field-intensity attenuation along radio paths is examined, taking into account single-scattering and multiple-scattering phenomena, and diffraction from buildings' corners and rooftops, for various positions of receiver and transmitter antennas with respect to surrounding obstacles. The comparison between experimental and theoretical predictions was motivated by the proposed stochastic multi-parametric model and the experimental data obtained for actual areas in Jerusalem (Israel) and Lisbon (Portugal), as well as by other models of multiple diffraction. The discussion is presented for realistic elevations of both terminal antennas to assess the accuracy and limits of the proposed stochastic model. A sensitivity analysis of the influence on the path loss of built-up terrain parameters and the elevation of antennas relative to the buildings surrounding them is presented     

Rapid isothermal processing for fabrication of GaAs-basedelectronic devices [HBTs]

The use of rapid isothermal processing (RIP) is detailed for each of the three annealing steps in the fabrication of heterostructure-based devices such as heterojunction bipolar transistors (HBTs). RIP can be used for the alloying of ohmic metal contacts, annealing of ion-bombarded regions for device isolation or parasitic capacitance reduction, and for conventional implant activation annealing. High-speed (f_T=65 GHz) HBTs were achieved using RIP for all of the required heating steps. The authors compare the use of several types of silicon carbide-coated graphite susceptors for eliminating slip formation on 2- and 3-in-diameter GaAs wafers during high-temperature implant activation annealing