Effects of a-Si:H resist vacuum-lithography processing on HgCdTe

A vacuum-compatible process for carrying out lithography on Hg_1−xCd_xTe and CdTe films was previously demonstrated. It was shown that hydrogenated amorphous silicon (a-Si:H) could be used as a dry resist by projecting a pattern onto its surface using excimer laser irradiation and then developing that pattern by hydrogen plasma etching. Pattern transfer to an underlying Hg_1−xCd_xTe film was then carried out via Ar/H₂ plasma etching in an electron cyclotron resonance (ECR) reactor. Despite the successful demonstration of pattern transfer, the possibility of inducing harmful effects in the Hg_1−xCd_xTe film due to this vacuum lithography procedure had not been explored. Here we present structural and surface compositional analyses of Hg_1−xCd_xTe films at key stages of the a-Si:H vacuum lithography procedure. X-ray diffraction double crystal rocking curves taken before and after a-Si:H deposition and after development etching were identical, indicating that bulk structural changes in the Hg_1−xCd_xTe film are not induced by these processes. Cross-section transmission electron microscopy studies show that laser-induced heating in the 350 nm thick a-Si:H overlayer is not sufficient to cause structural damage in the underlying Hg_1−xCd_xTe surface. In vacuo surface analysis via Auger electron spectroscopy and ion scattering spectroscopy suggest that the hydrogen plasma development process produces Hg-deficient surfaces but does not introduce C contamination. However, after ECR plasma etching into the Hg_1−xCd_xTe film, the measured x value is much closer to that of the bulk.     

1.4-/spl mu/m InGaAsP-InP strained multiple-quantum-well laser for broad-wavelength tunability

InGaAsP-InP strained multiple-quantum-well (MQW) lasers for extended wavelength tunability in external cavity operation were designed, fabricated, and tested. The active layer was a strain compensated structure consisting of three 3.2/spl plusmn/0.3 nm and three 6.4/spl plusmn/0.3 nm 1.0% compressive strained wells and five 10.3/spl plusmn/0.3 nm 0.45% tensile strained barrier layers. A 2-/spl mu/m-wide ridge waveguide laser of length 250 /spl mu/m, when used in a grating external cavity and with no coatings to alter the reflectivity of the facets, was observed to operate over a range >110 nm. The lasers were designed for applications in trace gas and liquid detection with the goal to maximize the tunable range when operated in external cavities and with no facet coatings.     

Cyclic code weight spectra and BIST aliasing

In built-in self-test for logic circuits, test data reduction can be achieved using a linear feedback shift register. The probability that this data reduction will allow a faulty circuit to be declared good is the probability of aliasing. Based on the independent bit-error model, we show that the code spectra for the cyclic code generated by the feedback polynomial can be used to obtain an exact expression for the aliasing probability of a multiple input signature register when the test length is a multiple of the cycle length. Several cases are examined and, as expected, primitive feedback polynomials provide the best performance. Some suggestions to avoid peaks in the aliasing probability are given.     

Design and Characterization of Fabry–Pérot MEMS-Based Short-Wave Infrared Microspectrometers

Microspectrometers based on the monolithic integration of a microelectromechanical system (MEMS) Fabry–Pérot filter and a Hg _x Cd_1–x Te-based infrared detector are discussed and measured results presented. The microspectrometers are designed to operate in the 1.5 μm to 2.6 μm wavelength range. Design equations are presented which account for the mechanical and optical characteristics of the device. Measurements indicate linewidths as narrow as 55 nm, switching times of 40 μs, and a tuning range of 380 nm, which is limited by snap-down. Optical characterization of the distributed Bragg mirrors and the Fabry–Pérot filter are presented, and these are shown to be in good agreement with simple first-order analytical models. Bowing of the movable Fabry–Pérot mirror due to stress gradients is identified as the dominant source of linewidth broadening.     

Radio frequency electromagnetic fields in large conducting enclosures: effects of apertures and human bodies on propagation and field-statistics

Radio frequency propagation in an electrically large resonant chamber (a screened room) was simulated by two models: a statistical combination of multiple resonant modes and a computational electromagnetic simulation [the transmission line matrix (TLM) method]. The purpose of this work was to investigate the effects of passengers and windows on electromagnetic fields (EMF) in aircraft and other vehicles. Comparison of the multimode models with measurements made in a screened room showed that as the electromagnetic losses increased, the transmission between two internal antennas was reduced, and there were fewer turning points in its frequency response. The autocorrelation of this frequency response provided a useful estimate of the composite Q-factor of the resonances and showed that the Q of the chamber was reduced from a value of the order of 10 000 when emptied to 1000 when windows were added and when filled with people to 100. The TLM simulation provided further useful information about the statistical variation of electric field strength with position.     

An Effective Traceback Network Attack Procedure for Source Address Verification

Wireless Personal Communications - The Internet is being extensively used in various fields to serve billions of users, which leads to the number of network security issues. Here, Internet Protocol...     

Processing and characterization of a-Si:H photoresists for a vacuum-compatible photolithography process

The vision of achieving a completely in-vacuum process for fabricating HgCdTe detector arrays is contingent on the availability of a vacuumcompatible photolithography technology. One such technology for vacuum photolithography involves the use of amorphous-hydrogenated Si (a-Si:H) as a photoresist. In this work, we deposit a-Si:H resists via plasma-enhanced chemical-vapor deposition (PECVD) using an Ar-diluted silane precursor. The resists are then patterned via excimer laser exposure and development etched in a hydrogen plasma where etch selectivities between unexposed and exposed regions exceed 600:1. To determine the best conditions for the technique, we investigate the effects of different exposure environments and carry out an analysis of the a-Si:H surfaces before and after development etching. Analysis via transmission electron microscopy (TEM) reveals that the excimer-exposed surfaces are polycrystalline in nature, indicating that the mechanism for pattern generation in this study is based on melting and crystallization. To demonstrate pattern transfer, underlying CdTe films were etched (after development of the resist) in an electron cyclotron resonance (ECR) plasma, where etch selectivities of approximately 8:1 have been achieved. The significance of this work is the demonstration of laser-induced poly-Si as an etching mask for vacuum-compatible photolithography.     

FBDR-Fuzzy Based DDoS Attack Detection and Recovery Mechanism for Wireless Sensor Networks

Wireless sensor networks (WSN) is considered as one of the exploring technology for its deployment of the massive number of dedicated sensor nodes which sense the environment and collect the data. The collected data are sent to the sink node through the intermediate nodes. Since the sensors node data are exposed to the internet, there is a possibility of vulnerability in the WSN. The common attack that affects most of the sensor nodes is the Distributed Denial of Services (DDoS) attack. This paper aims to identify the DDoS (Flooding) attack quickly and to recover the data of sensor nodes using the fuzzy logic mechanism. Fuzzy based DDoS attack Detection and Recovery mechanism (FBDR) uses type 1 fuzzy logic to detect the occurrence of DDoS attack in a node. Similarly fuzzy- type 2 is used for the recovery of data from the DDoS attack. Both the type 1 fuzzy-based rule and type 2 fuzzy-based rule perform well in terms of identifying the DDoS attack and recover the data under attack. It also helps to reduce the energy consumption of each node and improves the lifetime of the network. The proposed FBDR scheme is also compared with other related existing schemes. The proposed method saves energy usage by up to 20% compared with the related schemes. The experimental results represent that the FBDR method works better than other similar schemes.

     

The use of residuals in statistical modeling for fatigue-crackgrowth under constant amplitude loading

Various models have been proposed over the years to fit crack growth data. Many papers have appeared in which one or more models are mooted and fitted, and various assessments made of the quality of the fit. At the basic level the data are plotted, together with the fitted curve, to show agreement of experimental and predicted values. In this paper we suggest that it can be useful and informative to go one step further, examining the residuals, i.e., the differences between the experimental and predicted values. We draw attention to certain statistical methods for such critical assessment and show by example that this can reveal deficiencies in fit not otherwise obvious. In this way suitable modifications to the model can be suggested. Additional plots of estimated parameters are also shown to be informative about models     

Performance and Modeling of the MWIR HgCdTe Electron Avalanche Photodiode

The operation of the mid-wave infrared (MWIR) HgCdTe cylindrical electron injection avalanche photodiode (e-APD) is described. The measured gain and excess noise factor are related to the collection region fill factor. A two-dimensional diffusion model calculates the time-dependent response and steady-state pixel point spread function for cylindrical diodes, and predicts bandwidths near 1 GHz for small geometries. A 2 μm diameter spot scan system was developed for point spread function and crosstalk measurements at 80 K. An electron diffusion length of 13.4 μm was extracted from spot scan data. Bandwidth data are shown that indicate bandwidths in excess of 300 MHz for small unit cells geometries. Dark current data, at high gain levels, indicate an effective gain normalized dark density count as low as 1000 counts/μs/cm² at an APD gain of 444. A junction doping profile was determined from capacitance–voltage data. Spectral response data shows a gain-independent characteristic.