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The statistical method of identification of relativistic charged particles by measurements of ionization losses or time-of-flights simultaneously in some detectors of an experimental plant on the basis of the new goodness-of-fit ωn3-criterion is considered. The method proposed has been used for the secondary particles identification from the high energy -particles fragmentation on target nuclei. The efficiency of the method is excellently illustrated by reliable separation of events (rare events as well), connected with the appearence of 1- and 2-charged particles. The comparison of the ωn3-method with the traditional methods and with the method based on the ωn2-criterion shows that the new method outperforms the ωn2-method and most of the traditional ones in efficiency, but compares unfavourably with the likelihood method in power, however, the former has a number of advantages as compared with the latter.  相似文献   
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Increasing attention at oil refineries is being focused on solving environmental problems caused by stiffening of the requirements for emissions of harmful substances into air and water. Advanced technologies that reduce the effect of industrial enterprises on the environment to the minimum are becoming increasingly in demand. Treatment of process wastewaters to remove hydrogen sulfide and ammonia is one such problem of the modern refinery with cat crackers. __________ Translated from Khimiya i Tekhnologiya Topliv i Masel, No. 3, pp. 52–55, May–June, 2006.  相似文献   
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Various heat insulation materials produced at home and abroad are compared. The advantage of using natural nano-structured materials is substantiated. Translated from Novye Ogneupory, No. 7, pp. 41–44, July 2008.  相似文献   
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Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells. Structural and optical properties of the Al x Ga1 ? x N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al2O3 substrates, heterostructures for light-emitting diodes with Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.  相似文献   
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This article is devoted to work done in 2002–2006 as part of the unified project Reabilitatsiya to rehabilitate radiation hazardous objects and sections of the radioactively contaminated territory of the Russian Science Center Kurchatov Institute. The main objects of the rehabilitation work were old storage sites built for radioactive wastes on the territory of the Institute when military and civilian nuclear technologies were under development. The structural features of the storage sites, including the volumes and characteristics of the wastes stored, are presented. The salient aspects of the disposal sites, taken into account during the rehabilitation work, are discussed. The organization of the rehabilitation operations and the sequence in which they are performed, the special features of the technical design solutions used, the technological methods, and ways for conducting the work are described. __________ Translated from Atomnaya énergiya, Vol. 102, No. 5, pp. 300–306, May, 2007.  相似文献   
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Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ~0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ~8.5% are attained for the electron-beam energy of 23 keV.  相似文献   
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