Voiced speech excitation synthesis using a sinusoidal model

A modification to the `shape-invariant' sinusoidal speech model is proposed, whereby the phases of the component sinewaves used for the excitation are made to add coherently at each glottal closure. Applied to pitch and time-scale modification, higher quality synthetic speech is produced when large changes are required     

Current-mode A/D converter

The authors report the design of a new current-mode A/D converter, based on a modified successive-approximations model, in 1.2 μm CMOS technology. The proposed circuit is characterised by good accuracy and fast dynamic performance, low power consumption and small occupation area. SPICE simulations allow the design approach to be validated and the electrical performance of the ADC to be predicted     

Filter matrix estimation in automated DNA sequencing

In four-color fluorescence-based automated DNA sequencing, a 4×4 filter matrix parameterizes the relationship between the dye-intensity signals of interest and the data collected by an optical imaging system. The filter matrix is important because the estimated DNA sequence is based on the dye intensities that can only be recovered via inversion of the matrix. Here, the authors present a calibration method for the estimation of the columns of this matrix, using data generated through a special experiment in which DNA samples are labeled with only one fluorescent dye at a time. Simulations and applications of the method to real data are provided, with promising results     

Wideband microstrip array antenna with sidelobe cancellationchannels

An antenna array for wideband operation (up to 70%) is presented. The structure has low windloading area and consists of parallel printed circuit boards (PCB) with microstrip dipoles, feed network and metal fences placed between the PCBs. The low profile, low weight antenna array forms the main beam and three difference patterns for sidelobe cancellation. Experimental results are compared with calculations for both microstrip dipole and array     

Analysis of the deformation of polypropylene hot-tool butt welds

Thin microtomed samples from hot-tool butt welds of polypropylene pipes are subjected to uniaxial tensile stress using a specially built instrumented microtesting machine. The deformation of the interface between the weld and the bulk polymer is measured by an optical method. An analysis of these measurements is carried out using the finite element method, and contours of the effective stress are obtained. There is a steep stress gradient at the junction of the weld flash and the bulk polymer, although the stress concentration factor is relatively low. The stress is essentially constant in the bulk polymer apart from the region near the weld zone. Tests on samples without the weld flash show that the maximum stress occurs within the weld zone. This is consistent with long-term tests on larger samples, where the fracture is found to initiate within the weld. The method of analysis enables the stress-strain response of the weld material to be determined.     

Sorption of vapors and gases by cellulose acetate films

Cellulose diacetate and triacetate films 6–55 µm thick with a total porosity of 0.8–2% were prepared by pouring a solution on an immobile surface and by calendering. Sorption of H₂S and CO₂ gases and acetone vapors on these films was investigated in static and dynamic conditions. It was shown that films 6–10 µm thick prepared by calendering should be used for purification of air from H₂S and CO₂ and films 15–20 µm thick prepared by pouring should be used for removal of acetone vapors.Engels Institute of Technology, Saratov State University. Translated from Khimicheskie Volokna, No. 6, pp. 44–46, November–December, 1995.     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

The electrostatic problem for the SAW interdigital transducers inan external electric field. II. Periodic structures

For pt.I see ibid., vol.43, no.6, pp.1150-9 (1996). An exact solution of the electrostatic problem for calculating the surface charge and electric field distributions in an arbitrary periodic interdigital transducer (IDT) is given using the results of our companion paper. An arbitrary external electric field may be specified along the electrode structure with the unit cell containing one electrode, or several electrodes, of different widths. The potentials of the electrodes that may be specified are also arbitrary. It is shown that in the case without an external field, the solution includes all the known results as special cases. The case of shorted electrodes in the external electric field is investigated in detail. The surface charge and electric field distributions are calculated for a spatially harmonic external field with an arbitrary wavenumber. The results of the calculations are represented graphically for various ratios between the period of the electrode structure and the wavelength of the external field for the case of a unit cell containing one or two electrodes of different widths     

20-nm optical wavelength conversion using nondegenerate four-wavemixing

Wavelength conversion of optical signals over 20 nm is demonstrated using highly nondegenerate four-wave mixing in a semiconductor traveling-wave optical amplifier. This technique has the potential for extremely-high-speed operation and allows continuous tuning of both input and output wavelengths over the amplifier gain bandwidth. It is demonstrated that, even for such a large wavelength conversion range, it is possible to obtain conversion efficiencies in excess of -10 dB and high extinction ratios. The feasibility of the technique is demonstrated by system measurements at 622 Mb/s, showing a 1.1-dB power penalty at 10^-9 bit error rate (BER)