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991.
The paper presents the results of a 6-year investigation of hemopoiesis of dogs which were exposed to double irradiations (with a 1.5-month interval) with protons at a dose of 350 rad when different parts of the body (head, chest, abdomen, pelvis) were shielded. Throughout the entire period the dogs showed moderate leucopenia and by the end of the investigation insignificant anemia. The dogs irradiated with shielded abdomen displayed disturbances in bone marrow hemopoiesis, whereas other dogs exhibited relative, although transient, normalization. All the dogs showed a significant decrease of erythropoiesis and a relative stability of leucopoiesis as well as a significant elevation of the number of reticulocytes, monocytes and plasmocytes 5.5 year after irradiation.  相似文献   
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995.
A series of 238 hydronephrotic kidneys in 219 children is reported. The condition was more common in the male than in the female subject and occurred more frequently on the left side. It was often bilateral, especially in infants, with an abdominal mass as the common presenting feature. Loin or abdominal pain was the most frequent complaint in older children. In some cases hydronephrosis presented as a ruptured kidney following trauma. Only 1 patient was hypertensive. The lesion was asymptomatic in 18 cases and the incidence of urinary infection was low. Dismembered pyeloureteroplasty was the procedure of choice for reconstruction. Preliminary nephrostomy was used rarely and nephrectomy was done in 10 per cent of the kidneys. Of the 7 reoperations 4 were for persistent obstruction and 3 were because stones had formed after the pyeloplasty. The late results, assessed clinically and radiologically, have been entirely satisfactory. Many kidneys of initially doubtful value showed useful improvement after reconstructive operation and no secondary nephrectomies were performed. The only death in the series occurred 2 1/2 years postoperatively and was unrelated to the urinary tract.  相似文献   
996.
997.
An analytical model of gamma ray transport within the detectors of a positron camera, based on exponential absorption, has been developed and verified experimentally. The model has been used to study the intrinsic resolution obtained with scintillation detectors that have had their front corners removed. It is concluded that for crystals greater than 0.8 cm wide, tapering the face of the detector results in improved uniformity of resolution. Thus it is useful for medium and low resolution scanners. In these cases, it has been found that the loss in sensitivity resulting from the use of tapered crystals is less than that which occurs when septa are placed between crystals to achieve comparable uniformity of resolution. It has also been established that, in some instances, reducing the length of the detectors results in a more uniform resolution than that obtained with tapered crystals, although this leads to a loss in ring sensitivity and an increase in the detected scatter fraction.  相似文献   
998.
In0.5Ga0.5As on silicon photodetectors, including three types of interdigitated-finger devices as well as linear photoconductors, were fabricated and measured. The InGaAs/Si structure was grown by molecular beam epitaxy and utilized a 100 Å GaAs intervening nucleation layer between the silicon substrate and the InGaAs layers, step-graded InxGa1?xAs layers, and an in-situ grown 40 Å thick GaAs surface layer, which substantially enhanced the metal-semiconductor barrier height (Φb = 0.67 V) for the InGaAs. Schottky diodes fabricated independently of the photodetectors had nearly ideal characteristics with an ideality factor (n) of 1.02 and a reverse breakdown voltage of 40 V. The interdigitated Schottky photodetectors showed dark currents between <3nA and 54 μA at a 3 V bias and initial photoresponse rise times in the range of 600 to 725 ps, comparable to similar InGaAs metal-semiconductor-metal photodetectors grown lattice matched on InP. The photoconductors fabricated in the same material had rise times in the range of 575 to 1300 ps, thus being slightly slower, and had dark currents of 7 to 80 mA. The responsivity of the photoconductors was typically greater than that of the diodes by a factor of five to fifteen. The results show potential for monolithic integration of InGaAs photodetectors on silicon substrates.  相似文献   
999.
1000.
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