A selective CVD tungsten-strapped polysilicon local interconnectiontechnology

A local interconnection technology utilizing polysilicon strapped with selective-chemical-vapor-deposited (CVD) tungsten has been developed. Both n- and p-channel MOS transistors have been successfully fabricated using this technology. Tungsten deposited on polysilicon is an attractive gate shunt and local interconnection material because of its low resistivity, immunity to dopant segregation and diffusion, and resistance to electromigration. A potential problem of this technology is the excessive diode leakage current associated with strapping shallow source/drain diodes with tungsten. The leakage is attributed to defects induced by the heavy source/drain implant, which can be effectively eliminated with a proper annealing procedure     

An analysis of multiple parallel coupled quasi-tem transmission lines

A theoretical analysis of general multiple parallel coupled transmission lines in an inhomogeneous medium is presented. The analysis is based on the generalized telegraphists' equation. It is relatively simple and has the advantage of giving explicit solutions for the properties of the coupled-line system. Considerations are also given to a coupled-line structure whose lines have the same characteristic impedance. Results for two and three coupled lines are found in agreement with those published previously.     

Digital filter bank design quadratic-constrained formulation

Formulate the filter bank design problem as an quadratic-constrained least-squares minimization problem. The solution of the minimization problem converges very quickly since the cost function as well as the constraints are quadratic functions with respect to the unknown parameters. The formulations of the perfect-reconstruction cosine-modulated filter bank, of the near-perfect-reconstruction pseudo-QMF bank, and of the two-channel biorthogonal linear-phase filter bank are derived using the proposed approach. Compared with other design methods, the proposed technique yields PR filter banks with much higher stopband attenuation. The proposed technique can also be extended to design multidimensional filter banks     

Power splitting–based energy‐harvesting protocol for wireless‐powered communication networks with a bidirectional relay

In this paper, we apply the power splitting–based energy‐harvesting protocol to enhance the transmission between a wireless access point and a mobile user via a helping relay. The mobile user exploits the energy supplied by the access point and forwarded by the relay to transmit its own data back to the access point, again with the helping of the relay. Here, the effect of various system parameters, including power‐splitting factor and the power‐to‐noise ratio on the system performance, is rigorously studied, with closed‐form expressions for the outage probability and system throughput as the results. Furthermore, we figure out the optimal power‐splitting ratio at which the information throughput from the user to the AP is maximized, subject to the constraint on the transmitting power at the access point. All above analytical results are also supported by Monte Carlo simulation.     

CdS Quantum Dots Encapsulated in Chiral Nematic Mesoporous Silica: New Iridescent and Luminescent Materials

Simultaneous integration of light emission and iridescence into a semiconducting photonic material is attractive for the design of new optical devices. Here, a straightforward, one‐pot approach for liquid crystal self‐assembly of semiconductor quantum dots into cellulose nanocrystal‐templated silica is developed. Through a careful balance of the intermolecular interactions between a lyotropic tetraalkoxysilane/cellulose nanocrystal dispersion and water‐soluble polyacrylic acid/mercaptopropionic acid‐stabilized CdS quantum dots, CdS/silica/nanocellulose composites that retain both chiral nematic order of the cellulose nanocrystals and emission of the quantum dots are successfully co‐assembled. Subsequent removal of the cellulose template and organic stabilizers in the composites by controlled calcination generates new freestanding iridescent, luminescent chiral nematic mesoporous silica‐encapsulated CdS films. The pores of these materials are accessible to analytes and, consequently, the CdS quantum dots undergo strong luminescence quenching when exposed to TNT solutions or vapor.     

Direct and Indirect Exciton Dynamics in Few‐Layered ReS2 Revealed by Photoluminescence and Pump‐Probe Spectroscopy

Atomically thin‐layered ReS₂ with a distorted 1T structure has attracted attention because of its intriguing optical and electronic properties. Here, the direct and indirect exciton dynamics of a three‐layered ReS₂ is investigated by polarization‐resolved transient photoluminescence (PL) and ultrafast pump‐probe spectroscopy. The various time scales of the decay signals of the time‐resolved PL (<10 ps), with monitoring of the populations of electron–hole pairs (exciton), and the transient differential reflectance (≈1 and 100 ps), with monitoring of the populations of electrons and/or holes in the excited states, are observed. These results reveal the characteristic exciton dynamics: rapid relaxation of direct excitons (electron–hole pairs) and slow relaxation of the momentum‐mismatched indirect excitons accompanied by a one‐phonon emission process. These findings provide important information regarding the indirect bandgap nature of few‐layered ReS₂ and its characteristic exciton dynamics, boosting the understanding of the novel electronic and optical properties of atomically thin‐layered ReS₂.     

A 90-nm logic technology featuring strained-silicon

A leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low-/spl kappa/ CDO for high-performance dense logic is presented. Strained silicon is used to increase saturated n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) drive currents by 10% and 25%, respectively. Using selective epitaxial Si/sub 1-x/Ge/sub x/ in the source and drain regions, longitudinal uniaxial compressive stress is introduced into the p-type MOSEFT to increase hole mobility by >50%. A tensile silicon nitride-capping layer is used to introduce tensile strain into the n-type MOSFET and enhance electron mobility by 20%. Unlike all past strained-Si work, the hole mobility enhancement in this paper is present at large vertical electric fields in nanoscale transistors making this strain technique useful for advanced logic technologies. Furthermore, using piezoresistance coefficients it is shown that significantly less strain (/spl sim/5 /spl times/) is needed for a given PMOS mobility enhancement when applied via longitudinal uniaxial compression versus in-plane biaxial tension using the conventional Si/sub 1-x/Ge/sub x/ substrate approach.     

Service level negotiation andcops-sls protocol

The Internet is a set of interconnected domains in which different QoS technologies can be deployed. The dynamic provision of end-to-end QoS over heterogeneousip networks assumes the negotiation of mutually acceptablesla. This paper presents the concept of intra-, inter- and multiple-domain service level negotiation using thecops-sls protocol. The negotiation process gives different parties in the negotiation the ability to agree upon the service level that a data stream can obtain, along with the permissible pricing of the service.     

Efficient miniature fiber-optic tunable filter based on intracoreBragg grating and electrically resistive coating

An electrically tunable reflection filter based on a platinum-coated single-mode optical fiber that contains an intracore Bragg grating has been demonstrated. The device shows a dc tuning range of 2.15 nm with a corresponding electrical power of 0.54 W. Wavelength modulation (WM) has been observed at frequencies lower than 100 Hz. The wavelength shift depends linearly on the electrical input power. A maximum efficiency of 4.1 nm/W is obtained for dc tuning