Gasification kinetics of oil sands coke

Kinetics of steam gasification of delayed and fluid cokes derived from Athabasca bitumen have been studied in 6.35 cm diameter stirred and fixed bed reactors. Experiments were carried out at atmospheric pressure and at temperatures between 800°C and 930°C. The coke particle size ranged from 0.1 to 3.5 mm, and the steam partial pressure was varied from 15.2 to 60.6 kPa. Scanning electron microscopy, surface area analysis, and mercury porosimetry were employed to relate physical structure changes in the solids to experimental kinetic data. Several kinetic models for gasification were tested with the experimental gasification data. Rate expressions are presented for carbon conversion and for the release of sulphur.     

Numerical and experimental analysis of large passivation opening for solder joint reliability improvement of micro SMD packages

In this paper, using a recently developed solder fatigue model for wafer level-chip scale package (WL-CSP), we investigated the improvement on solder joint reliability for a 8-bump micro SMD package by enlarging the passivation layer opening at the solder–die interface. The motivation to enlarge the passivation opening is to reduce the severity of the stress concentration caused by the original design, and also to increase the contact area between the solder bump and aluminum bump pad. It was confirmed in the thermal shock test that with the new design, package fatigue life improved by more than 70%. To numerically predict this improvement represents a unique challenge to the modeling. This is because in order to capture the slightest geometrical difference on the order of a few microns between the two designs, the multiple-layer solder-die interface needs to be modeled using extremely fine mesh, while the overall dimensions of the package and the test board are on the order of millimeters. To bridge this tremendous gap in geometry, a single finite element model that incorporates all necessary geometrical details is deemed computationally prohibitive and impractical. In this paper, we applied a global–local modeling scheme that was also suggested by others [1, 2 and 3]. The global model contains the complete package with much simplified solder–die interface whereas the local model includes only one solder joint, but with detailed solder–die interface. Unlike most global–local models proposed by others, we included time-independent plasticity and temperature-dependent materials in the global model. This greatly improved model correlation accuracy with only moderate increase in run time. Energy-based solder fatigue model was used to correlate the inelastic strain energy with the package fatigue life. In an earlier study [4], we have found that Darveaux’s equations tended to be conservative when applied to the micro SMD, and hence new correlations based on curve-fitting the test data were derived. In this paper, we used the newly derived equation and achieved less than 20% error in N₅₀ life for both designs, which is on par with Darveaux’s equations when used for BGAs. The analysis also revealed two factors that may account for the life improvement. First, a slight decrease in inelastic energy dissipation after enlarging the passivation opening. Second, the shift of the crack initiation location which leads to longer crack growth length for the new design. The second factor was also independently confirmed by the failure analysis.     

Dispersion characteristics of the broadside-coupled coplanarwaveguide

The dispersive properties for the even- and odd-modes of the broadside-coupled coplanar waveguide (CPW) are determined using the spectral domain method. Various numerical results of the even- and odd-mode effective dielectric constants as a function of frequency are presented and discussed. It is found that the structure has a very weak dispersion. This fact is further confirmed through a comparison between the calculated dynamic and quasi-static results of the even- and odd-mode effective dielectric constants. The low dispersion feature signifies the fact that the quasi-static analysis is adequate for designing practical microwave and millimeter-wave circuits employing broadside-coupled CPW     

On the effects of a spacecraft subcarrier unbalanced modulator

This paper presents mathematical models with associated analysis of the deleterious effects which a spacecraft's subcarrier unbalanced modulator has on the performance of a phase-modulated residual carrier communications link. The undesired spectral components produced by the phase and amplitude imbalances in the subcarrier modulator can cause (1) potential interference to the carrier tracking and (2) degradation in the telemetry bit signal-to-noise ratio (SNR). A suitable model for the unbalanced modulator is developed and the threshold levels of undesired components that fall into the carrier tracking loop are determined. The distribution of the carrier phase error caused by the additive White Gaussian noise (AWGN) and undesired component at the residual RF carrier is derived for the limiting cases. Further, this paper analyses the telemetry bit signal-to-noise ratio degradations due to undesirable spectral components as well as the carrier tracking phase error induced by phase and amplitude imbalances. Numerical results which indicate the sensitivity of the carrier tracking loop and the telemetry symbol-error rate (SER) to various parameters of the models are also provided as a tool in the design of the subcarrier balanced modulator.     

Substrate issues for the growth of mercury cadmium telluride

Close lattice matching and lattice compatibility with mercury cadmium telluride (MCT) make CdTe and related alloys ideal substrate materials for growth of MCT layers for the purpose of making high-performance second-generation infrared detectors. However, the limitations in the properties of CdTe and the difficulties in its bulk growth have prompted extensive research in the area of alternative substrates. Some basic relevant characteristics of substrates such as sapphire, GaAs, and silicon are compared and the possibilities and problems associated with each material are analyzed in the light of the most recent results in the field.     

Required bandwidth, unwanted emission, and data power efficiencyfor residual and suppressed carrier systems-a comparative study

This paper presents a new concept for required bandwidth along with a method for computing this bandwidth and the associated undesired emission for the classes of PCM/PSK/PM, PCM/PM and BPSK signals. The PCM/PSK/PM signals considered here employ either a square wave or sine-wave subcarrier with NRZ data format. On the other hand, the PCM/PM and BPSK signals use either a Bi-phase or an NRZ data format. Furthermore, the maximum allowable required bandwidth in the presence of noise and the data power efficiency for these modulation schemes will also be investigated. The term “data power efficiency” as considered in this paper consists of two principal components, namely, the amount of power contained in the data channel, and the symbol signal-to-noise ratio (SSNR) degradation due to the presence of intersymbol interference (ISI) for a specified required bandwidth. This paper evaluates both of these components numerically for the modulation schemes considered and the results are then compared. Furthermore, the impact of baseband filtering on the required bandwidth is also investigated in this paper     

New look on relay selection strategies for full-duplex multiple-relay NOMA over Nakagami-m fading channels

Wireless Networks - By removing the orthogonal use of radio-resources, non-orthogonal multiple access (NOMA) has been introduced to improve the spectral efficiency of fifth generation (5G) and...     

Quantum‐Tunneling Metal‐Insulator‐Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition

A quantum‐tunneling metal‐insulator‐metal (MIM) diode is fabricated by atmospheric pressure chemical vapor deposition (AP‐CVD) for the first time. This scalable method is used to produce MIM diodes with high‐quality, pinhole‐free Al₂O₃ films more rapidly than by conventional vacuum‐based approaches. This work demonstrates that clean room fabrication is not a prerequisite for quantum‐enabled devices. In fact, the MIM diodes fabricated by AP‐CVD show a lower effective barrier height (2.20 eV) at the electrode–insulator interface than those fabricated by conventional plasma‐enhanced atomic layer deposition (2.80 eV), resulting in a lower turn on voltage of 1.4 V, lower zero‐bias resistance, and better asymmetry of 107.     

Optimization of an RFID location identification scheme based on the neural network

An indoor localization technology is increasingly critical as location‐aware applications evolve. Researchers have proposed several indoor localization technologies. Because most of the proposed indoor localization technologies simply involve using the received signal strength indicator value of radio‐frequency identification (RFID) for indoor localization, radio‐frequency interference, and environmental factors often limit the accuracy of localization results. Therefore, this study proposes an accurate RFID localization based on the neural network (ARL‐N²), a passive RFID indoor localization scheme for identifying tag positions in a room, combining a location identification based on dynamic active RFID calibration algorithm with a backpropagation neural network (BPN). The proposed scheme composed of two phases: in the training phase, an appropriate BPN architecture is constructed using the training data derived from the coordinates of reference tags and the coordinates obtained using the localization algorithm. By contrast, the online phase involves calculating the tracking tag coordinates and using these values as BPN inputs, thereby enhancing the estimated location. A performance evaluation of the ARL‐N² schemes confirms its high localization accuracy. The proposed method can be used to locate critical objects in difficult‐to‐find areas by creating minimal errors and applying and economical technique. Copyright © 2013 John Wiley & Sons, Ltd.     

Low-power-consumption and high-gain CMOS distributed amplifiers using cascade of inductively coupled common-source gain cells for UWB systems

A distributed amplifier with new cascade inductively coupled common-source gain-cell configuration is presented. Compared with other existing gain-cell configurations, the proposed cascade common-source gain cell can provide much higher transconductance and, hence, gain. The new distributed amplifier using the proposed gain-cell configuration, fabricated via a TSMC 0.18-/spl mu/m CMOS process, achieves an average power gain of around 10 dB, input match of less than -20 dB, and noise figure of 3.3-6.1 dB with a power consumption of only 19.6 mW over the entire ultra-wideband (UWB) band of 3.1-10.6 GHz. This is the lowest power consumption ever reported for fabricated CMOS distributed amplifiers operating over the whole UWB band. In the high-gain operating mode that consumes 100 mW, the new CMOS distributed amplifier provides an unprecedented power gain of 16 dB with 3.2-6-dB noise figure over the UWB range.