Modelling of electrostatic gate operations in the Kane solid state quantum computer

The nuclear spin quantum computer proposed by Kane [Nature 393 (1998) 133] exploits as a qubit array ³¹P dopants embedded within a silicon matrix. Single-qubit operations are controlled by the application of electrostatic potentials via a set of metallic ‘A’ gates, situated above the donors, on the silicon surface, that tune the resonance frequency of individual nuclear spins, and a globally applied RF magnetic field that flips spins at resonance. Coupling between qubits is controlled by the application of potentials via a set of ‘J’ gates, between the donors, that induce an electron-mediated coupling between nuclear spins. We report the results of the study of the electric field and potential profiles arising within the Kane device from typical gate operations. The extent to which a single nuclear spin can be tuned independently of its neighbours, by operation of an associated A-gate, is examined and key design parameters in the Kane architecture are addressed. Implications for current fabrication strategies involving the implantation of ³¹P atoms are discussed. Solution of the Poisson equation has been carried out by simulation using a TCAD modelling package (Integrated Systems Engineering AG).     

Statistical Tolerance Analysis for Assured Analog Test Coverage

Increasing numbers of analog components in today's systems necessitate system level test composition methods that utilize on-chip capabilities rather than solely relying on costly DFT approaches. We outline a tolerance analysis methodology for test signal propagation to be utilized in hierarchical test generation for analog circuits. A detailed justification of this proposed novel tolerance analysis methodology is undertaken by comparing our results with detailed SPICE Monte-Carlo simulation data on several combinations of analog modules. The results of our experiments confirm the high accuracy and efficiency of the proposed tolerance analysis methodology.     

高性能高功率D类驱动器

D类音频放大器电路已经问世十余年，与一般的线性AB类拓朴相比，D类放大器不仅效率更高而且尺寸也更小。在一个AB类放大器上，经过其输出器件的电压等于扬声器和干线电压之间的电压差，并且会随音频信号的变化而变化。因此，功耗等于这个电压与输出电流的乘积。典型效率为30％。结果，AB类输出级通常需要具有散热器，如果允许，最好是一个风扇，特别是在功率水平超过50W的情况下更是如此。     

3D Printed Anatomical Nerve Regeneration Pathways

A 3D printing methodology for the design, optimization, and fabrication of a custom nerve repair technology for the regeneration of complex peripheral nerve injuries containing bifurcating sensory and motor nerve pathways is introduced. The custom scaffolds are deterministically fabricated via a microextrusion printing principle using 3D models, which are reverse engineered from patient anatomies by 3D scanning. The bifurcating pathways are augmented with 3D printed biomimetic physical cues (microgrooves) and path‐specific biochemical cues (spatially controlled multicomponent gradients). In vitro studies reveal that 3D printed physical and biochemical cues provide axonal guidance and chemotractant/chemokinetic functionality. In vivo studies examining the regeneration of bifurcated injuries across a 10 mm complex nerve gap in rats showed that the 3D printed scaffolds achieved successful regeneration of complex nerve injuries, resulting in enhanced functional return of the regenerated nerve. This approach suggests the potential of 3D printing toward advancing tissue regeneration in terms of: (1) the customization of scaffold geometries to match inherent tissue anatomies; (2) the integration of biomanufacturing approaches with computational modeling for design, analysis, and optimization; and (3) the enhancement of device properties with spatially controlled physical and biochemical functionalities, all enabled by the same 3D printing process.     

Contiguous and Atomically Thin Pt Film with Supra‐Bulk Behavior Through Graphene‐Imposed Epitaxy

The nature of the atomic configuration and the bonding within epitaxial Pt‐graphene films is investigated. Graphene‐templated monolayer/few‐multilayers of Pt, synthesized as contiguous 2D films by room temperature electrochemical methods, is shown to exhibit a stable {100} structure in the 1–2 layer range. The fundamental question being investigated is whether surface Pt atoms rendered in these 2D architectures are as stable as those of their bulk Pt counterparts. Unsurprisingly, a single layer Pt on the graphene (Pt_1ML/GR) shows much larger Pt dissociation energy (?7.51 eV) than does an isolated Pt atom on graphene. However, the dissociation energy from Pt_1ML/GR is similar to that of bulk Pt(100), ?7.77 eV, while in bi‐layer Pt on the graphene (Pt_2ML/GR), this energy changes to ?8.63 eV, surpassing its bulk counterpart. At Pt_2ML/GR, the dissociation energy also slightly surpasses that of bulk Pt(111). Bulk‐like stability of atomically thin Pt–graphene results from a combination of interplanar Pt? C covalent bonding and inter/intraplanar metallic bonding. This unprecedented stability is also accompanied by a metal‐like presence of electronic states at the Fermi level. Such atomically thin metal‐graphene architectures can be a new stable platform for synthesizing 2D metallic films with various applications in catalysis, sensing, and electronics.     

Systematic Doping Control of CVD Graphene Transistors with Functionalized Aromatic Self‐Assembled Monolayers

Recent reports have shown that self‐assembled monolayers (SAMs) can induce doping effects in graphene transistors. However, a lack of understanding persists surrounding the quantitative relationship between SAM molecular design and its effects on graphene. In order to facilitate the fabrication of next‐generation graphene‐based devices it is important to reliably and predictably control the properties of graphene without negatively impacting its intrinsic high performance. In this study, SAMs with varying dipole magnitudes/directions are utilized and these values are directly correlated to changes in performance seen in graphene transistors. It is found that, by knowing the z‐component of the SAM dipole, one can reliably predict the shift in graphene charge neutrality point after taking into account the influence of the metal electrodes (which also play a role in doping graphene). This relationship is verified through density functional theory and comprehensive device studies utilizing atomic force microscopy, X‐ray photoelectron spectroscopy, Raman spectroscopy, and electrical characterization of graphene transistors. It is shown that properties of graphene transistors can be predictably controlled with SAMs when considering the total doping environment. Additionally, it is found that methylthio‐terminated SAMs strongly interact with graphene allowing for a cleaner graphene transfer and enhanced charge mobility.     

Objective distortion measure for binary text image based on edge line segment similarity.

This paper proposes a new approach to measure the distortion introduced by changing individual edge pixels in binary text images. The approach considers not only how many pixels are changed but also where the pixels are changed and how the flipping affects the overall shape formed by the edge line. Similarities between the edge line segments in the original and distorted image are compared to measure the distortion. Subjective testing shows that the new distortion measure correlates well with human visual perception.     

Diindenoperylene derivatives: A model to investigate the path from molecular structure via morphology to solar cell performance

Efficient organic electronic devices require a detailed understanding of the relation between molecular structure, thin film growth, and device performance, which is only partially understood at present. Here, we show that small changes in molecular structure of a donor absorber material lead to significant changes in the intermolecular arrangement within organic solar cells. For this purpose, phenyl rings and propyl side chains are fused to the diindenoperylene (DIP) molecule. Grazing incidence X-ray diffraction and variable angle spectroscopic ellipsometry turned out to be a powerful combination to gain detailed information about the thin film growth. Planar and bulk heterojunction solar cells with C60 as acceptor and the DIP derivatives as donor are fabricated to investigate the influence of film morphology on the device performance. Due to its planar structure, DIP is found to be highly crystalline in pristine and DIP:C60 blend films while its derivatives grow liquid-like crystalline. This indicates that the molecular arrangement is strongly disturbed by the steric hindrance induced by the phenyl rings. The high fill factor (FF) of more than 75% in planar heterojunction solar cells of the DIP derivatives indicates excellent charge transport in the pristine liquid-like crystalline absorber layers. However, bulk heterojunctions of these materials surprisingly result in a low FF of only 54% caused by a weak phase separation and thus poor charge carrier percolation paths due to the lower ordered thin film growth. In contrast, crystalline DIP:C60 heterojunctions lead to high FF of up to 65% as the crystalline growth induces better percolation for the charge carriers. However, the major drawback of this crystalline growth mode is the nearly upright standing orientation of the DIP molecules in both pristine and blend films. This arrangement results in low absorption and thus a photocurrent which is significantly lower than in the DIP derivative devices, where the liquid-like crystalline growth leads to a more horizontal molecular alignment. Our results underline the complexity of the molecular structure-device performance relation in organic semiconductor devices.     

Inkjet printed metallizations for Cu(In1−x Ga x )Se2 photovoltaic cells

This study reports the inkjet printing of Ag front contacts on Aluminum doped Zinc Oxide (AZO)/intrinsic Zinc Oxide (i‐ZnO)/CdS/Cu(In_1−xGa_x)Se₂ (CIGS)/Mo thin film photovoltaic cells. The printed Ag contacts are being developed to replace the currently employed evaporated Ni/Al bi‐layer contacts. Inkjet deposition conditions were optimized to reduce line resistivity and reduce contact resistance to the Al:ZnO layer. Ag lines printed at a substrate temperature of 200°C showed a line resistivity of 2.06 µΩ · cm and a contact resistance to Al:ZnO of 8.2 ± 0.2 mΩ · cm² compared to 6.93 ± 0.3 mΩ · cm² for thermally evaporated contacts. These deposition conditions were used to deposit front contacts onto high quality CIGS thin film photovoltaic cells. The heating required to print the Ag contacts caused the performance to degrade compared to similar devices with evaporated Ni/Al contacts that were not heated. Devices with inkjet printed contacts showed 11.4% conversion efficiency compared to 14.8% with evaporated contacts. Strategies to minimize heating, which is detrimental for efficiency, during inkjet printing are proposed. Copyright © 2011 John Wiley & Sons, Ltd.     

Printing Reconfigurable Bundles of Dielectric Elastomer Fibers

Active soft materials that change shape on demand are of interest for a myriad of applications, including soft robotics, biomedical devices, and adaptive systems. Despite recent advances, the ability to rapidly design and fabricate active matter in complex, reconfigurable layouts remains challenging. Here, the 3D printing of core-sheath-shell dielectric elastomer fibers (DEF) and fiber bundles with programmable actuation is reported. Complex shape morphing responses are achieved by printing individually addressable fibers within 3D architectures, including vertical coils and fiber bundles. These DEF devices exhibit resonance frequencies up to 700 Hz and lifetimes exceeding 2.6 million cycles. The multimaterial, multicore-shell 3D printing method opens new avenues for creating active soft matter with fast programable actuation.