Image contrast of ultra HVEM and future ultra HREM

Review of the measurements and interpretation of energy dependence of extinction distance and transmissive power of electrons, which have appeared in the electron microscope images of crystals at the voltages ranging from 50 to 3000 kV, is presented. Applications of two beam dynamical theory of electron diffraction considering absorption effect of electrons made clear the importance of relativistic effect of the mass of electron to the variation of extinction distance and transmissive power at higher voltage and noted that they are proportional to (v/c) and (v/c)2 respectively, where v and c are the velocity of illuminating electrons and light. With elevating accelerating voltage of illuminating electrons, it was noted that many diffracted waves are excited and thus, for understanding of the image contrast and the improvement of transmissive power of electrons, many beam dynamical theory considering absorption of electron waves has to be applied. Detailed analysis of the excitation and absorption of component Bloch waves was carried out and flux (electron current) flow of Bloch waves and total waves was deduced. Improvements of image contrast and visibility of the imperfection in crystalline materials both in thin and thick regions of ultra-high voltages were realized by using the multi-beam imaging (MBI) method. In MBI of very thick crystals, it was noted that most of the inelastically scattered electrons which appeared in the background of the diffraction patterns contribute to the image contrast by the successive elastic scattering after inelastic scattering. It was noted that the improvement of maximum usable thickness at high voltage is highly dependent on the contribution of inelastically scattered electrons. The calculated flux flows of total electrons of various materials in various orientations were calculated for not only ultra-high voltages but low voltages such as 100 kV. It was suggested that the intensity distribution of such flux flow will be recorded by the ultra HREM in the near future and will become useful to identify types of atoms, such as the interface consisting of different kinds of atoms.     

Solution‐Processed Silicane Field‐Effect Transistor: Operation Due to Stacking Defects on the Channel

2D silicon nanomaterials have unique potential for use in applications owing to their many different exotic electronic properties. Field‐effect transistors are fabricated based on free‐standing silicanes through a solution process. Owing to the sensitive surface and the nanometer thickness, the devices require the use of fabrication conditions similar to those of lithium‐ion batteries to prevent oxidation of the sheets. Reliable transistor performance is observed at room temperature in a channel thinner than 3 nm, as drain voltage dependent transfer curves current modulation, depending on the edge effect of the silicane, although the transistor property is modest (hole mobility of 1.8 cm² V^?1 s^?1). The results suggest the feasibility of other air‐sensitive 2D nanomaterials for applications in nanoelectronic devices.     

Advanced Wireless Access System

The key words for the future telecommunications are personalization, multi-media services and high accessibility to the network. These trends naturally lead to radio media application to access links. In this sense, this paper proposes an advanced wireless access system with a capacity supporting broadband video and data services.Concept of the system can be defined as a new radiocommunication category with advantages of both fixed and mobile systems.The system is designed to transport ATM-based signals using SHF (or EHF) bands to wireless terminals, interconnected with optical fibers at the network side. The basic system configuration is presented as well as examples of system parameters.For radio aspects the maximum service coverages of the radio base stations are calculated based on availability consideration. Preferred frequency bands for actual operation are also discussed.     

Measurement of RF Transmission Mode in ITER Relevant EC H&;CD Transmission Line

The preliminary results of mode measurement in the ITER relevant 40 m long transmission test line composed from 63.5 mm diameter corrugated waveguides and miter bends are presented. The field patterns were measured by taking temperature profiles on a paper screen placed in front of the waveguide end using an infrared imaging camera. The complex electric field at the waveguide end was retrieved from the measured temperature profiles. As a result, the transmission power includes 87% of HE₁₁ mode and 6% of LP₁₁ odd (HE₂₁+TE₀₁) mode and small ratios of other modes. The mode content had small dependence on length of the transmission line. This result indicated that the higher order mode content generated at the input of the transmission line is conserved and propagated through the transmission line. This suggests that the initial RF coupling to the waveguide is critical since it affects the launcher efficiency.     

Thermoelectric Generation Using Water Lenses

A solar light concentrator composed of water and plastic transparent film has been designed. This flexible lens design can trace the solar movement through control of the tensile stress and amount of water, and concentrate the solar energy onto the thermoelectric (TE) module surface. An experimental water lens was constructed, and the concentrated intensity was monitored by a photodiode as a function of x–z position; For example, when 3.0 kg water was filled and tension of 69.0 N/m was applied to the transparent vinyl sheet, the concentration ratio was evaluated as the maximum of 28.0 at a depth of 657 mm from the water lens bottom surface. TE generation was tested to show the validity of the water lens. The surface condition of the receiver was found to be critical.     

A New Approach to Suppress the Effect of Machining Error for Waveguide Septum Circular Polarizer at 230 GHz Band in Radio Astronomy

A new stepped septum-type waveguide circular polarizer (SST-CP) was developed to operate in the 230 GHz band for radio astronomy, especially submillimeter-band VLBI observations. For previously reported SST-CP models, the 230 GHz band is too high to achieve the design characteristics in manufactured devices because of unexpected machining errors. To realize a functional SST-CP that can operate in the submillimeter band, a new method was developed, in which the division surface is shifted from the top step of the septum to the second step from the top, and we simulated the expected machining error. The SST-CP using this method can compensate for specified machining errors and suppress serious deterioration. To verify the proposed method, several test pieces were manufactured, and their characteristics were measured using a VNA. These results indicated that the insertion losses were approximately 0.75 dB, and the input return losses and the crosstalk of the left- and right-hand circular polarization were greater than 20 dB at 220–245 GHz on 300 K. Moreover, a 230 GHz SST-CP was developed by the proposed method and installed in a 1.85-m radio telescope receiver systems, and then had used for scientific observations during one observation season without any problems. These achievements demonstrate the successful development of a 230 GHz SST-CP for radio astronomical observations. Furthermore, the proposed method can be applicable for observations in higher frequency bands, such as 345 GHz.     

In situ high temperature TEM observation of interaction between multi-walled carbon nanotube and in situ deposited gold nano-particles

Interaction between multi-walled carbon nanotubes (MWNTs) and deposited gold nano-particles has been dynamically observed in a 200 kV transmission electron microscope (TEM) using a specimen heating holder. Gold particles with diameters of several tens of microns were mixed with MWNTs to mount on the heating element of a specimen heating holder. The gold particles were instantaneously heated to 1373 K to deposit gold nano-particles on the MWNTs from a very short distance. The MWNTs were then heated to 1073 K to observe interaction between the deposited gold nano-particles and MWNTs. Some gold nano-particles drilled through the wall of the MWNT and entered the capillary space of the MWNTs. To characterize the mechanism of the transition of the gold nano-particles into the capillary space of the MWNT, high resolution TEM observation of the deformed wall of MWNT was also carried out.     

An on-chip active decoupling circuit to suppress crosstalk in deep-submicron CMOS mixed-signal SoCs

A decoupling circuit using an operational amplifier is proposed to suppress substrate crosstalk in mixed-signal system-on-chip (SoC) devices. It overcomes the parasitic inductance problem of on-chip capacitor decoupling. The effect of the proposed decoupling circuit is not limited by parasitic fine impedance. A 0.13-/spl mu/m CMOS test chip showed that substrate noise at frequencies from 40 MHz to 1 GHz was incrementally suppressed by sequentially activating three of the proposed circuits in parallel. The power dissipation of each circuit was 3.3 mW at a 1.0-V power supply. The test chip measurement showed that the proposed decoupling reduced crosstalk by 31% at 200 MHz, whereas it was reduced by 4.4% with capacitor decoupling. This 7:1 ratio, or 17 dB, corresponds to the gain of the opamp. Design of the opamp and its feedback loop for active decoupling is simple, making the opamp useful for SoC applications.     

Effects of uni-axial mechanical stress on IGBT characteristics

This paper describes the impacts of mechanical stress on vertical power devices. The stress dependence of the DC characteristics of trench insulated gate bipolar transistors (IGBTs) was measured. The experimental results could be reproduced by the device simulation, which included stress dependence models of the carrier mobility and the band gap. We found that the stress dependence of the on-state voltage mainly arose from the MOSFET portion of the IGBT. Using the device simulation, we estimated the effects of mechanical stress on the surge voltage and the saturation current, which give us the important information for designing a power module with higher ruggedness.