Measurement of the delayed-neutron yields in the fission of233U,236U,237Np,240Pu,and241Pu by neutrons from the spectrum of a fast reactor

Translated from Atomnaya Énergiya, Vol. 66, No. 2, pp. 100–103, February, 1989.     

High-voltage bridge for measuring spontaneous polarization,dielectric constants,and conductivity of ferroelectric crystals

Translated from Izmeritel'naya Tekhnika, No. 9, pp. 34–35, September, 1989.     

Tube-shaping unit — A way of improving the quality of shaped tubes

Lenin Dnepropetrovsk Pipe Plant. Translated from Metallurg, No. 8, p. 39, August, 1989.     

Evaluation of inelastic constitutive models under plasticity-creep interaction for steel at 600°C

Uniaxial tests to identify plasticity-creep interaction in steel at 600°C were carried out as the Benchmark Project by the Subcommittee on Inelastic Analysis and Life Prediction, JSMS. The purpose of this paper is to present recent experimental data and predictions of constitutive models obtained in the project. Ten types of constitutive models were utilized to compare analytical predictions to sixteen benchmark experiments which are grouped into four categories: (I) tensile and creep tests under monotonic loading, (II) mixed mode tests under plastic and creep loading, (III) ratcheting deformation tests under program loads, and (IV) cyclic deformation tests under the combination of different strain rates. The benchmark tests in Group IV are used to estimate the creep-fatigue life of steel; the results will be published in a separate paper.     

Half-bridge inverter using 4H-SiC gate turn-off thyristors

This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm²) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices