EXPERIMENTAL MEASUREMENT OF TEMPERATURE AND MOISTURE PROFILES DURING APPLE DRYING

An experimental system has been designed and constructed to investigate the drying rate, temperature and moisture profiles developed within food materials during forced convective air drying. The moisture profile was determined by employing the technique of gamma ray densitometry, and embedded thermocouples were used to sense temperature at different locations. The overall drying rate was measured using an electronic balance. A microcomputer and a computer front end were implemented for data acquisition and experimental control. Sample temperature and moisture profiles measured during drying are presented as a function of both drying time and the distance to the surface of the specimen. Both profiles described the drying phenomena inside the sample. The evaporation front was observed in a narrow region of the apple specimen, this front moved into the sample as drying progressed. The amount of apple shrinkage was determined to be linearly related to the distance which the evaporation front had recededfrom the initial surface.     

Semiconductor junction transceiver for fibre optic communication

Measurements on three types of l.e.d.s show that these devices can be used as detectors as well as emitters. Hence these diodes can be used as semiconductor junction transceivers (s.j.t.s) in multiterminal data bus systems.     

Displacement damage in GaAs structures

High-energy knock-on atoms produced by incident protons are much more important in determining the total nonionizing energy deposited in GaAs than in Si, due to the relative size of the Lindhard correction for partitioning the recoil energy. High-energy recoils are mainly produced by inelastic nuclear interactions between the incident protons and the target atoms. A review of previous calculations indicates that both the fast cascade and the evaporation phases of the elastic interaction contribute to the average energy of the recoiling ion. New calculations are presented for the energy dependence of the nonionizing energy deposited in GaAs as a result of inelastic interaction with protons over the energy range 10-1000 MeV. These calculations are combined with the previously determined contribution from elastic interactions to obtain the energy dependence of the total nonionizing energy deposited in GaAs by protons. The calculation is compared with both new and earlier experimental data for ion-implanted GaAs resistors irradiated with protons over the energy range 40-188 MeV, in order to form a basis whereby proton displacement effects in GaAs structures can be predicted. It is shown that results obtained for 10 MeV protons, for example, can be used to predict results to be expected at much higher energies     

Sexual attraction toward clients, use of supervision, and prior training: A qualitative study of predoctoral psychology interns.

Interviews were conducted with 13 predoctoral psychology interns about an experience of sexual attraction toward a client, use of supervision to address the sexual attraction, and prior training regarding sexual attraction. Results indicated that sexual attraction to clients consisted of physical and interpersonal aspects. Therapists believed they were more invested and attentive than usual to clients to whom they were sexually attracted, and they indicated that sexual attraction created distance, distraction, and loss of objectivity. In terms of supervision, only half of the participants disclosed their sexual attraction to supervisors, and supervisors seldom initiated the discussion. Furthermore, trainees found it helpful when supervisors normalized the sexual attraction and provided the opportunity to explore feelings in supervision. Finally, trainees believed their training programs did not adequately address therapist sexual attraction. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Optical frequency synthesis spectroscopy

In order to measure the super narrow spectral features of cooled atoms and ions, in the optical region, optical frequency synthesis (OFS) techniques rather than wavelength techniques must be used. It is anticipated that many of these resonances will be in the optical region of the spectrum, and this paper will address the state-of-the-art of the measurements of frequencies in that region. Two recent optical frequency measurements of iodine transitions in the visible will be described as well as recent improvements in fabricating the point-contact diode used in these measurements.