Photoelectrochemical Investigation of Fullerenes

Abstract

Fullerene solar cells are demonstrated. Illuminated, C₆₀ drives oxidation of redox couples in solution. a photoelectrochemical solid/liquid, rather than a solid state, junction, improves photocurrent, and a C₆₀ single crystal, and not polycrystalline film, decreases dark current, and thereby light driven charge transfer dominates.     

Two-server password-only authenticated key exchange

Typical protocols for password-based authentication assume a single server that stores all the information (e.g., the password) necessary to authenticate a user. An inherent limitation of this approach, assuming low-entropy passwords are used, is that the user?s password is exposed if this server is ever compromised. To address this issue, it has been suggested to share a user?s password information among multiple servers, and to have these servers cooperate (possibly in a threshold manner) when the user wants to authenticate. We show here a two-server version of the password-only key-exchange protocol of Katz, Ostrovsky, and Yung (the KOY protocol). Our work gives the first secure two-server protocol for the password-only setting (in which the user need remember only a password, and not the servers? public keys), and is the first two-server protocol (in any setting) with a proof of security in the standard model. Our work thus fills a gap left by the work of MacKenzie et al. (2006) [31] and Di Raimondo and Gennaro (2006) [16]. As an additional benefit of our work, we show modifications that improve the efficiency of the original KOY protocol.     

Chip geometry and cutting force prediction in gear hobbing

This paper presents a tri-dexel geometric engine integrated simulation model for the gear hobbing operation. The process kinematics are modeled and validated using CNC signals from a Liebherr LC500 hobbing machine. Workpiece geometry updating and cutter-workpiece engagement (CWE) calculations are efficiently realized in the tri-dexel engine. 3D force contributions at discretized nodes along the hob's cutting edges are computed considering the localized principal cutting directions, and rake and inclination angles. To measure cutting forces, a rotary dynamometer is successfully adapted and used alongside a Kalman filter to compensate for structural dynamics. The predicted forces agree well with their experimental counterparts.     

处理器与音视频外设之间的连接

数字信号处理器以需要大量I/O负载的应用为目标,通常为开发人员提供各种集成接口一某些是标准接口,另外一些则是专用接口.例如,美国模拟器件公司(ADI)的Blackfin系列处理器是会聚处理器,这意味着它们在一个芯片上集成了DSP与MCU功能,这些处理器拥有与音频应用相关的两种主要类型的串行接口.该处理器的低比特速率双线接口(TWI)与串行外设接口(SPI)模块是用于音频器件控制与配置的.这些外设接口的前向通道通常用于配置或控制音频转换器,而反向通道则主要负责传输转换器的反馈信息或状态信息.该处理器的高比特速率串行端口外围电路,通常用于执行音频数据传输.     

Relationship between pacemaker fibrillation thresholds and electrode area.

Energy thresholds for electrical pacing of the heart are lower with small electrodes than with large. Because pacing of the heart during the vulnerable period may produce ventricular fibrillation, it is also pertinent to know if fibrillation threshold is affected by the electrode size. Electrodes of different surface area but of the same material were implanted in 40 dogs and the pacing thresholds were recorded. Ventricular fibrillation was electrically induced by discharging a 2-msec d.c. cathodal pulse of progressively increasing energy into the vulnerable period. It was found that small electrodes required more energy to produce ventricular fibrillation than large electrodes, and the ratio of fibrillation to stimulation threshold was higher for the small-surface-area electrode. The difference between the thresholds and ratios obtained with the various electrodes was statistically significant. A similar experiment was performed in animals with chronically implanted electrodes, producing comparable results. The results indicate that, in regard to pacing and fibrillation thresholds, small electrodes are preferable to large.     

Blackfin处理器面向开源应用

在嵌入式应用中。随着“开源”C／C 代码越来越成为流行的用于替代基于版权算法的另一选择，挑战也随之而来。其中，最重要的问题是如何优化代码．使其在选定的处理器中更好地运行。本文将探讨开源算法在Blockfin处理器上的移植以及代码优化。     

Deposition of silicon carbide coatings on titanium alloy with a low pressure R.F. plasma

A low pressure r.f. plasma was applied to deposit SiC coatings onto Ti6A14V substrates. The coatings were deposited onto substrates at temperatures of 140–390°C from a gas mixture of tetramethylsilane (TMS), argon and hydrogen. Scanning electron microscopy, X-ray diffraction and transmission electron microscopy were employed to identify and to characterize the coatings obtained. It was found that the coatings were hexagonal α-SiC of type III. The coating thickness approximately follows a parabolic time law. A maximum rate of deposition was observed in the pressure range 5–6 mbar. The rate of deposition increases with concentration of TMS up to 0.05% and remains approximately constant up to 0.12%     

Elastic properties of apatites

One of the prime motives for studying the elastic properties of the apatites stems from the occurrence of hydroxyapatite, OHAp, in calcified tissue. In this paper the isotropic elastic contents of crystalline apatite solids are determined from measurements of elastic wave velocities through powders under pressure. Once obtained, these elastic constants are used to model the elastic behaviour of a two-phase composite material having one phase more rigid than the other by a factor of 2.4. The results are then used in a general discussion of the probable order of magnitude of the elastic constants of the organic non-crystalline phase in bones and teeth, under the assumption of a two-phase system.     

Rapid isothermal processing for fabrication of GaAs-basedelectronic devices [HBTs]

The use of rapid isothermal processing (RIP) is detailed for each of the three annealing steps in the fabrication of heterostructure-based devices such as heterojunction bipolar transistors (HBTs). RIP can be used for the alloying of ohmic metal contacts, annealing of ion-bombarded regions for device isolation or parasitic capacitance reduction, and for conventional implant activation annealing. High-speed (f_T=65 GHz) HBTs were achieved using RIP for all of the required heating steps. The authors compare the use of several types of silicon carbide-coated graphite susceptors for eliminating slip formation on 2- and 3-in-diameter GaAs wafers during high-temperature implant activation annealing