Analysis of Cu/low-k bond pad delamination by using a novel failure index

For the development of state-of-the-art Cu/low-k CMOS technologies, the integration and introduction of new low-k materials is one of the major bottlenecks owing to the bad thermal and mechanical integrity of these materials and the inherited weak interfacial adhesion. Especially the forces resulting from packaging related processes such as dicing, wire bonding, bumping and molding are critical and can easily result in cracking, delamination and chipping of the IC back-end structure if no appropriate measures are taken. This paper presents a methodology for optimizing the thermo-mechanical reliability of bond pads by using a 3D multi-scale finite element approach. An important characteristic of this methodology is the use of a novel energy-based failure index, which allows a fast qualitative comparison of different back-end structures. The usability of the methodology will be illustrated by a case study in which several bond pad structures are analysed.     

Compact broadband planar orthomode transducer

The design and test results of a compact C-band orthomode transducer are presented. The transducer comprises four rectangular probes orthogonally arranged in a circular waveguide, designed to work in the WG13 band. Measurements of the system in the frequency range 4.64 - 7.05 GHz agree very well with simulation results and show a cross-polarisation level below -58 dB, a return loss of about -20 dB, and an insertion loss difference of less than 0.18 dB between the orthogonal polarisation modes across the full waveguide band.     

Noise analysis of a first-order thermal ΣΔ architecture for convective accelerometers

This paper presents the study of an original closed-loop conditioning approach for fully-integrated convective inertial sensors. The method is applied to an accelerometer manufactured on a standard CMOS technology using an auto-aligned bulk etching step. Using the thermal properties of the sensor, a first order sigma-delta modulator is built. This “electro-physical” modulator realizes an analog-to-digital conversion of the acceleration signal. Besides, the feedback mode of operation improves the sensor overall performance.     

Photoelectric properties of In/In<Subscript>2</Subscript>Se<Subscript>3</Subscript> structures

The hexagonal modification of In₂Se₃ single crystal is grown by planar crystallization from nearly stoichiometric melt and by the vapor-phase method. For the first time, the Schottky barriers In/n-In₂Se₃, which are photosensitive in a wide incident-photon energy range of 1–3.8 eV at 300 K, are obtained. The nature of the interband photoactive absorption is studied. The energy-barrier height and interband optical-transition energy are estimated. It is concluded that the grown crystals can be used in broadband optical-radiation converters.     

A Low-Power Integrated Circuit for a Wireless 100-Electrode Neural Recording System

Recent work in field of neuroprosthetics has demonstrated that by observing the simultaneous activity of many neurons in specific regions of the brain, it is possible to produce control signals that allow animals or humans to drive cursors or prosthetic limbs directly through thoughts. As neuroprosthetic devices transition from experimental to clinical use, there is a need for fully-implantable amplification and telemetry electronics in close proximity to the recording sites. To address these needs, we developed a prototype integrated circuit for wireless neural recording from a 100-channel microelectrode array. The design of both the system-level architecture and the individual circuits were driven by severe power constraints for small implantable devices; chronically heating tissue by only a few degrees Celsius leads to cell death. Due to the high data rate produced by 100 neural signals, the system must perform data reduction as well. We use a combination of a low-power ADC and an array of "spike detectors" to reduce the transmitted data rate while preserving critical information. The complete system receives power and commands (at 6.5 kb/s) wirelessly over a 2.64-MHz inductive link and transmits neural data back at a data rate of 330 kb/s using a fully-integrated 433-MHz FSK transmitter. The 4.7times5.9 mm² chip was fabricated in a 0.5-mum 3M2P CMOS process and consumes 13.5 mW of power. While cross-chip interference limits performance in single-chip operation, a two-chip system was used to record neural signals from a Utah Electrode Array in cat cortex and transmit the digitized signals wirelessly to a receiver     

Effect of Fe doping on structural and magnetic properties of La2/3Ca1/3Mn1−yFeyO3 (y=0–0.03) thin films

We have characterized the magnetic and structural properties of pure and ⁵⁷Fe-doped La_2/3Ca_1/3MnO₃ thin films and targets, substituted with 1% and 3% of ⁵⁷Fe on the Mn site. The films were prepared via high O₂-pressure (500 mTorr) by DC magnetron sputtering on (1 0 0) SrTiO₃ and (1 0 0) LaAlO₃ single-crystal substrates. Mössbauer spectra measured at room temperature confirm the presence of Fe³⁺ with octahedral coordination, thus indicating that Fe is incorporated into the structure by substituting Mn. Structural analysis by X-ray diffraction (XRD) shows that the films are single phase and c-axis oriented and that the Fe doping gives rise to a relaxation of the epitaxial strain. Interestingly, the Curie temperature and the magnetoresistance (MR) show a non-monotonic behavior with Fe doping. This indicates that initially the strain relaxation induced by the Fe doping is more important than the reduction of ferromagnetic coupling due to the Fe incorporation.     

Product Multicommodity Flow in Wireless Networks

We provide a tight approximate characterization of the n-dimensional product multicommodity flow (PMF) region for a wireless network of n nodes. Separate characterizations in terms of the spectral properties of appropriate network graphs are obtained in both an information-theoretic sense and for a combinatorial interference model (e.g., protocol model). These provide an inner approximation to the n ²-dimensional capacity region. Our results hold for general node distributions, traffic models, and channel fading models. We first establish that the random source-destination model assumed in many previous results on capacity scaling laws, is essentially a one-dimensional approximation to the capacity region and a special case of PMF. We then build on the results for a wireline network (graph) that relate PMF to its spectral (or cut) properties. Specifically, for a combinatorial interference model given by a network graph and a conflict graph, we relate the PMF to the spectral properties of the underlying graphs resulting in simple computational upper and lower bounds. These results show that the 1/radicn scaling law obtained by Gupta and Kumar for a geometric random network can be explained in terms of the scaling law of the conductance of a geometric random graph. For the more interesting random fading model with additive white Gaussian noise (AWGN), we show that the scaling laws for PMF can again be tightly characterized by the spectral properties of appropriately defined graphs-such a characterization for general wireless networks has not been available before. As an implication, we obtain computationally efficient upper and lower bounds on the PMF for any wireless network with a guaranteed approximation factor.     

A Generalization of the Blahut–Arimoto Algorithm to Finite-State Channels

The classical Blahut-Arimoto algorithm (BAA) is a well-known algorithm that optimizes a discrete memoryless source (DMS) at the input of a discrete memoryless channel (DMC) in order to maximize the mutual information between channel input and output. This paper considers the problem of optimizing finite-state machine sources (FSMSs) at the input of finite-state machine channels (FSMCs) in order to maximize the mutual information rate between channel input and output. Our main result is an algorithm that efficiently solves this problem numerically; thus, we call the proposed procedure the generalized BAA. It includes as special cases not only the classical BAA but also an algorithm that solves the problem of finding the capacity-achieving input distribution for finite-state channels with no noise. While we present theorems that characterize the local behavior of the generalized BAA, there are still open questions concerning its global behavior; these open questions are addressed by some conjectures at the end of the paper. Apart from these algorithmic issues, our results lead to insights regarding the local conditions that the information-rate-maximizing FSMSs fulfill; these observations naturally generalize the well-known Kuhn-Tucker conditions that are fulfilled by capacity-achieving DMSs at the input of DMCs.     

Charge Collection From Within a Collecting Junction Well

This paper provides the analytical equation for the charge collection from a collecting region with a finite dimension. Electron-beam-induced current has widely been used for semiconductor characterization. The availability of analytical expressions would further enhance the study and development of various measurement techniques. Nevertheless, most devices are fabricated with junctions that have finite dimensions, which are usually either L shaped or U shaped. For these cases, the analytical expressions are lacking. This paper provides the derivation of the electric current profile when an electron beam scans from within the collecting region for these two cases. The computation was verified with a semiconductor device simulation program on a computer and was found to be in good agreement. This paper then gives a discussion on the effects of certain parameters such as the junction depth and junction width, the diffusion length, and the depth of the generation volume.