Interdigitated back‐contact heterojunction solar cell concept for liquid phase crystallized thin‐film silicon on glass

We present an interdigitated back‐contact silicon heterojunction system designed for liquid‐phase crystallized thin‐film (~10 µm) silicon on glass. The preparation of the interdigitated emitter (a‐Si:H(p)) and absorber (a‐Si:H(n)) contact layers relies on the etch selectivity of doped amorphous silicon layers in alkaline solutions. The etch rates of a‐Si:H(n) and a‐Si:H(p) in 0.6% NaOH were determined and interdigitated back‐contact silicon heterojunction solar cells with two different metallizations, namely Al and ITO/Ag electrodes, were evaluated regarding electrical and optical properties. An additional random pyramid texture on the back side provides short‐circuit current density (j_SC) of up to 30.3 mA/cm² using the ITO/Ag metallization. The maximum efficiency of 10.5% is mainly limited by a low of fill factor of 57%. However, the high j_SC, as well as V_OC values of 633 mV and pseudo‐fill factors of 77%, underline the high potential of this approach. Copyright © 2015 John Wiley & Sons, Ltd.     

High-temperature performance of InGaAs-InGaAlAs-InP 1.79-μmdiode lasers grown in solid-source molecular-beam epitaxy

1.79-μm InGaAs-InGaAlAs strained-layer quantum-well diode lasers have been fabricated. A characteristic temperature of 72 K has been achieved. At a temperature as high as 100°C, a continuous-wave output power of more than 6.5 mW per facet has been demonstrated with lasers using as-cleaved facets as mirrors     

A Si bipolar monolithic RF bandpass amplifier

The application of monolithic inductors to the realization of Si bipolar monolithic RF amplifiers is investigated. As a test vehicle, a bipolar monolithic bandpass amplifier was fabricated and characterized. A 4-nH silicon integrated inductor was used to achieve a peak S ₂₁ gain of 8 dB, a simulated noise figure of 6.4 dB, and a matched input impedance of 50 Ω in the frequency range of 1-2 GHz     

A 100-MHz macropipelined VAX microprocessor

A macropipelined CISC microprocessor was implemented in a 0.75-μm CMOS 3.3-V technology. The 1.3-million-transistor custom chip measures 1.62×1.46 cm² and dissipates 16.3 W. The 100-MHz parts were benchmarked at 50 SPEC marks. The on-chip clocking system and several high-performance logic and circuit techniques are described. Macroinstruction handling, micropipeline management, and control store structures highlight the design architecture. The hierarchical array organization and fast tag comparison technique of the primary cache are discussed. Power estimation procedures are outlined, and the results are compared to measurements. Physical design and verification methods, and CAD tools are also described. After extensive functional verification efforts are described, chip and system test results are presented     

Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe

High density plasma etching of mercury cadmium telluride using CH₄/H₂/Ar plasma chemistries is investigated. Mass spectrometry is used to identify and monitor etch products evolving from the surface during plasma etching. The identifiable primary etch products are elemental Hg, TeH₂, and Cd(CH₃)₂. Their relative concentrations are monitored as ion and neutral fluxes (both in intensity and composition), ion energy and substrate temperature are varied. General insights are made into surface chemistry mechanisms of the etch process. These insights are evaluated by examining etch anisotropy and damage to the remaining semiconductor material. Regions of process parameter space best suited to moderate rate, anisotropic, low damage etching of HgCdTe are identified.     

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks

A systematic study of the flat-band voltage (V_fb) shift of Ru gated metal-oxide-semiconductor (MOS) capacitors subjected to thermal treatment in O₂ has been performed. The dependence of the V_fb shift on the thickness of Ru, anneal temperature and time is studied. The V_fb shift is ascribed to the shift of metal gates’ work function (WF), and is not significantly dependent on the type of dielectric (HfO₂ or SiO₂). From time-of-flight secondary ion mass spectrometry (TOF-SIMS) measurement, it was found that after thermal treatment in ¹⁸O₂, ¹⁸O penetrated through Ru and was incorporated in the Ru/dielectric interface region. We believe that the formation of the thin interfacial RuO_x layer is responsible for the V_fb shift.     

Direct modulation of widely tunable twin-guide lasers

The possibility to directly modulate widely tunable lasers up to several gigahertz is desirable in telecom applications. We discuss the dynamic properties of the recently proposed widely tunable twin-guide laser concept. It has promising prospects with a maximum theoretical bandwidth above 20 GHz and the 3-dB bandwidth at 250 mA indicates that an actual bandwidth of 12 GHz should be possible. The current lasers were not designed for high-speed modulation, so only 1-GHz modulation can be reached at the moment.     

Ultra-low temperature sensitive deep-well quantum cascade lasers (λ - 4.8 μm) via uptapering conduction band edge of injector region

A new design feature for deep-well quantum cascade (QC) lasers, in which the conduction band edge of the injector region is uptapered, results in virtual suppression of carrier leakage out of the active regions of 4.8 mm emitting devices. For heatsink temperatures in the 20?90°C range the characteristic temperature coefficients for threshold, T₀, and slope efficiency, T₁, reach values as high as 278 and 285 K, respectively, which are nearly twice the values for conventional QC lasers. At 20°C, the threshold current density for uncoated, 30 period, 3 mm-long devices is only ~1.8 kA/cm².     

Modeling Feedback Bridging Faults with Non-Zero Resistance

We study the behavior of feedback bridging faults with non-zero bridge resistance in both combinational and sequential circuits. We demonstrate that a test vector may detect the fault, not detect the fault or lead to oscillation, depending on bridge resistance. Moreover, the resistance intervals in which a particular behavior is observed are not necessarily contiguous. We demonstrate non-trivial behavior for situations in which a detection seems impossible, namely disabled loops going through a gate with controlling values on its side inputs.We outline the multiple strengths problem which arises due to the fact that a critical bridge resistance depends on the strengths of the signals driving the bridge, which in turn are functions of the number of the on-transistors, these again depending on the bridge resistance, making such a fault very hard to resolve. For sequential circuits, we describe additional difficulties caused by the need to account for implications on bridge behavior, which have originated in the previous time frames. We conclude that the complexity of resistive feedback bridging fault simulation accurate enough to resolve such situations will probably be prohibitively high and propose possible simplifying assumptions. We present simulation results for ISCAS benchmarks using these assumptions with and without taking oscillation into account.This revised version was published online in March 2005 with corrections to the cover date.