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61.
On the capacities of bipartite Hamiltonians and unitary gates 总被引:2,自引:0,他引:2
Bennett C.H. Harrow A.W. Leung D.W. Smolin J.A. 《IEEE transactions on information theory / Professional Technical Group on Information Theory》2003,49(8):1895-1911
We consider interactions as bidirectional channels. We investigate the capacities for interaction Hamiltonians and nonlocal unitary gates to generate entanglement and transmit classical information. We give analytic expressions for the entanglement generating capacity and entanglement-assisted one-way classical communication capacity of interactions, and show that these quantities are additive, so that the asymptotic capacities equal the corresponding 1-shot capacities. We give general bounds on other capacities, discuss some examples, and conclude with some open questions. 相似文献
62.
63.
D. Vignolles D. Smirnov G. Rikken B. Raquet H. Rakoto C. Proust M. Nardone J. Léotin F. Lecouturier M. Goiran O. Drachenko J. M. Broto L. Brossard A. Audouard 《Journal of Low Temperature Physics》2003,133(1-2):97-120
An overview over past and present activities and future developments at the Toulouse pulsed magnetic field facility is given, both as far as technical developments of the infrastructure, as well as low temperature physics performed at the LNCMP are concerned. 相似文献
64.
A mechanism of soldering of an aluminum alloy die casting to a steel die is proposed. A soldering critical temperature is
postulated, at which iron begins to react with aluminum to form an aluminum-rich liquid phase and solid intermetallic compounds.
The liquid joins the die with the casting upon solidification. The critical temperature is determined by the elements in both
the casting alloy and the die material and is equal to the solidus temperature of the resulting alloy. The critical temperature
is used to predict the onset of die soldering, and the local liquid fraction is related to the soldering tendency. Experiments
have been carried out to validate the concept and to determine the critical temperature for die soldering in an iron-aluminum
system. Thermodynamic calculations are used to determine the critical temperature and soldering tendency for the cases of
pure aluminum and a 380 alloy in a steel mold. Factors affecting the soldering tendency are discussed, and methods for reducing
die soldering are suggested. 相似文献
65.
66.
67.
The selector activated sludge (SAS) systems are known to prevent excessive growth of filamentous microorganisms responsible for bulking sludge, but these systems were hardly ever modelled. This study aimed to develop a model capable of predicting rapid substrate removal in the SAS systems. For this purpose, the Activated Sludge Model No. 3 (ASM3) was extended with three processes (adsorption, direct growth on the adsorbed substrate under aerobic or anoxic conditions). The modified ASM3 was tested against the results of batch experiments with the biomass originating from two full-scale SAS systems in Germany. The endogenous biomass was mixed with various readily biodegradable substrates (acetate, peptone, glucose and wastewater) and the utilisation of substrate (expresses as COD) and oxygen uptake rates (OURs) were measured during the experiments. In general, model predictions fitted to the experimental data, but a considerable number of kinetic (5) and stoichiometric (2) parameters needed to be adjusted during model calibration. The simulation results revealed that storage was generally a dominating process compared to direct growth in terms of the adsorbed substrate utilisation. The contribution of storage ranged from 65-71% (Plant A) and 69-92% (Plant B). 相似文献
68.
69.
70.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献