Optical properties of Nd-doped Ca3(VO4)2 single crystal fiber

Optical absorption and photoluminescence of Ca₃(VO₄)₂ single crystal grown by a floating-zone technique and containing Nd³⁺ ions were investigated. High absorption coefficients and broadening of most absorption bands are present at 300 K, while substructures in some of the same bands can be evidenced at 12 K. Most features of measured spectra are characteristic of random occupation of more than a single Ca²⁺ site by the Nd³⁺ ion and of distortions provoked by different charge compensation mechanisms involving oxygen vacancies promotion in the crystal lattice. Nd³⁺ optical properties were studied by using the Judd-Ofelt theory to calculate the spectral parameters relevant for laser applications.     

'Size leap' algorithm: an efficient extraction of the longest common motifs from a molecular sequence set. Application to the DNA sequence reconstruction.

We propose a new method, called 'size leap' algorithm, of search for motifs of maximum size and common to two fragments at least. It allows the creation of a reduced database of motifs from a set of sequences whose size obeys the series of Fibonacci numbers. The convenience lies in the efficiency of the motif extraction. It can be applied in the establishment of overlap regions for DNA sequence reconstruction and multiple alignment of biological sequences. The method of complete DNA sequence reconstruction by extraction of the longest motifs ('anchor motifs') is presented as an application of the size leap algorithm. The details of a reconstruction from three sequenced fragments are given as an example.     

Cognitive impenetrability of memory for orientation.

This research produced evidence that an aspect of visual long-term memory—memory for lateral orientation of pictures—is constrained by a viewer-centered or egocentric reference frame. Subjects in Experiment 1 verbally encoded and then verbally recalled the locations of objects within scenic pictures. Recall of locations in terms of left-right directions (using a viewer-centered frame) exceeded recall of locations in terms of relative proximities to features of the room (using an environmental frame), even if the relative proximities had been verbalized at input. Subjects in Experiment 2 viewed half of a list of pictures directly and the remainder, reflected in a mirror. They then took a test in which they classified old pictures—all viewed directly— as "same-orientation" or "reversed." Performance was much better with a viewer-centered definition of same orientation (Does the picture appear the same way around?) than with an environmental definition (Is the picture the same way around on the screen?), even with forewarning of an environmental orientation test. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates

High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.     

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.     

Edge-to-edge matching in thin films

A peculiar type of preferential orientation was recently observed in polycrystalline films that are formed by a solid-state reaction on a single crystal substrate. This texture, for which the term axiotaxy was proposed, is characterized by the preferred alignment of a low-index plane in the film to a low-index plane with the same d-spacing in the substrate. The alignment of lattice planes with nearly identical d-spacings across the interface results in a periodic structure along one direction in the plane of the interface. As a consequence of the constraint that a set of planes in the film is preferentially parallel to a set of planes in the substrate, the texture manifests itself as an off-normal fiber texture. This article is based on a presentation made in the “Hume-Rothery Symposium on Structure and Diffusional Grwoth Mechanisms of Irrational Interphase Boundaries,” which occurred during the TMS Winter meeting, March 15–17, 2004, in Charlotte, NC, under the auspices of the TMS Alloy Phases Committee and the co-sponsorship of the TMS-ASM Phase Transformations Committee.