Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates

High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.     

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.     

Edge-to-edge matching in thin films

A peculiar type of preferential orientation was recently observed in polycrystalline films that are formed by a solid-state reaction on a single crystal substrate. This texture, for which the term axiotaxy was proposed, is characterized by the preferred alignment of a low-index plane in the film to a low-index plane with the same d-spacing in the substrate. The alignment of lattice planes with nearly identical d-spacings across the interface results in a periodic structure along one direction in the plane of the interface. As a consequence of the constraint that a set of planes in the film is preferentially parallel to a set of planes in the substrate, the texture manifests itself as an off-normal fiber texture. This article is based on a presentation made in the “Hume-Rothery Symposium on Structure and Diffusional Grwoth Mechanisms of Irrational Interphase Boundaries,” which occurred during the TMS Winter meeting, March 15–17, 2004, in Charlotte, NC, under the auspices of the TMS Alloy Phases Committee and the co-sponsorship of the TMS-ASM Phase Transformations Committee.     

Modified transmission-reflection method for measuring constitutive parameters of thin flexible high-loss materials

The transmission-reflection method is modified for measuring constitutive parameters of thin high-loss materials used as radar absorbers. The method uses a two-layer structure, consisting of a layer of thin flexible unknown material supported by a thicker rigid known material. The analysis and measurements focus on nonmagnetic samples of a high dielectric constant and loss factor and on the waveguide configuration in the X-band. A nonlinear least-squares optimization is used to obtain the complex permittivity from the measured scattering parameters. The uncertainty analysis presented facilitates selection of the support layer thickness. Simulations with the finite-difference time-domain method explore the effects of sample imperfections. Accuracy of a few percent can be achieved for a sample thickness of a fraction of a millimeter, provided that the thickness of the support dielectric is close to optimum and sample has only small surface imperfections.     

Generalized Nakagami-m phase crossing rate

This paper provides simple, exact, new closed-form expressions for the generalized phase crossing rate of Nakagami-m fading channels. Sample numerical results obtained by simulation are presented that validate the formulations developed here. A special case of this formulation is the Rayleigh case, whose result agrees with that obtained elsewhere in the literature. In passing, several new closed-form results concerning the statistics of the envelope, its in-phase and quadrature components, phase, and their time derivatives are obtained.     

Hermetic Packaging Using Eutectic SnPb Solder and Cr/Ni/Cu Metallurgy Layer

We have developed an easy, low-cost, and low-temperature optoelectronic hermetic packaging technology utilizing the eutectic SnPb solder and the Cr/Ni/Cu bonding pad. Bonding characteristics of the design were investigated in three different setups: silicon-silicon, silicon-glass, and glass-glass samples. Hermeticity was achieved at 200 degC without flux for all samples during the final bonding process. The bonding pads did not dewet during or after the reflow process. By utilizing the eutectic SnPb solder, the self-alignment process can be achieved. Because the bonding process was conducted through visual alignment, original misalignment was estimated to be more than 100 mum. The surface tension of melting solder during the reflow process allowed the samples to self-align and obtain a misalignment of less than 20 mum after solidification, which was 4% of the entire solder width. The bonding strength of the three setups ranged from 3 to 10 MPa. Among the three setups, glass-glass samples appear to have the strongest bonding strength. This low-temperature and cost-effective soldering process has demonstrated its feasibility and potential utilization in optoelectronic packaging     

On Striping Traffic over Multiple IEEE 802.11(b) Wireless Channels

Due to interference, path loss, multipath fading, background noise, and many other factors, wireless communication normally cannot provide a wireless link with both a high data rate and a long transmission range. To address this problem, striping network traffic in parallel over multiple lower-data-rate but longer-transmission-range wireless channels may be used. In this paper, we propose a new striping method and evaluate its performances over multiple IEEE 802.11(b) channels under various conditions. Our extensive simulation results show that this method is quite effective for such an application. S.Y. Wang is an Associate Professor of the Department of Computer Science and Information Engineering at National Chiao Tung University, Taiwan. He received his Master and Ph.D. degree in computer science from Harvard University in 1997 and 1999, respectively. His research interests include wireless networks, Internet technologies, network simulations, and operating systems. He is the author of the NCTUns 2.0 network simulator and emulator, which is being widely used by network and communication researchers. More information about the tool is available at http://NSL.csie.nctu.edu.tw/nctuns.html. C.H. Hwang received his master degree in computer science from NCTU in 2002 and currently is working for a network company. C.L. Chou currently is a third-year Ph.D. student at the Department of Computer Science and Information Engineering, National Chiao TungUniversity (NCTU), Taiwan. He received his master degree in computer science from NCTU in 2002.