974.
The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis (DTA), metallography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only five distinct compositions: IrSi, Ir
4Si
5, Ir
3Si
4, Ir
3Si
5 and IrSi
≈3. The existence of Ir
2Si
3, Ir
4Si
7, and IrSi
2 could not be confirmed in this study. DTA in conjunction with X-ray powder diffraction confirm polymorphism in IrSi
≈3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 80.5 ± 1 at.% Si was observed between IrSi
≈3 and silicon. Both Ir
4Si
5 and Ir
3Si
4 exhibit distinct metallic behavior while Ir
3Si
5 is semiconducting. IrSi and IrSi
≈3 exhibit nearly temperature-independent electrical resistivities on the order of (5–10) × 10
−6 ω m.
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