Half-bridge inverter using 4H-SiC gate turn-off thyristors

This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm²) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices     

A short recipe for seashell synthesis

Several artistic examples of seashell-like forms produced on a graphics supercomputer are provided. The shapes were created using a simple graphics primitive and rendered using lighting and shading facilities of 3-D extensions to X Windows or the PHIGS+ proposed standard. It is expected that the techniques, equations, and systems will provide useful tools and stimulate future studies in the graphics characterization of morphologically rich spiral shapes produced by relatively simple generating formulas     

Is Chlorogenic Acid Bitter?

Chlorogenic acid at 5° published threshold concentration (100 mg/ L) in aqueous 0.2% potassium acid tartrate was not significantly more bitter than aqueous 0.2% potassium tartrate alone when evaluated by taste panel.     

Equal-channel angular extrusion of beryllium

The equal-channel angular extrusion (ECAE) technique has been applied to a powder metallurgy (P/M) source Be alloy. Extrusions have been successfully completed on Ni-canned billets of Be at approximately 425°C. No cracking was observed in the billets, and significant grain refinement was achieved. In this article, microstructural features and dislocation structures are discussed for a singlepass extrusion, including evidence of <c> and <c+a> dislocations. Significant crystallographic texture developed during ECAE, which is discussed in terms of this unique deformation processing technique and the underlying physical processes which sustain the deformation. S.R. AGNEW, formerly with the Oak Ridge National Laboratory, Oak Ridge, TN 37831-6115 This article is based on a presentation made in the symposium entitled “Defect Properties and Mechanical Behavior of HCP Metals and Alloys” at the TMS Annual Meeting, February 11–15, 2001, in New Orleans, Louisiana, under the auspices of the following ASM committees: Materials Science Critical Technology Sector, Structural Materials Division, Electronic, Magnetic & Photonic Materials Division, Chemistry & Physics of Materials Committee, Joint Nuclear Materials Committee, and Titanium Committee.     

Determination of dislocation densities in HCP metals from X-ray diffraction line-broadening analysis

X-Ray diffraction (XRD) line-broadening analysis has been performed on highly textured Zr-2.5Nb specimens which had been deformed in tensile tests to produce well-controlled dislocation structures. An iterative deconvolution method has been applied to extract the broadening function for the material, using as standards, a Zr single crystal and a 0 pct deformed specimen. In both cases, for specific tensile tests, a significant contribution to the basal line braodening was observed, which was clearly not directly related to the dislocation structure generated by the deformation, i.e., so-called c-component dislocations having a component of their Burgers vectors perpendicular to the basal plane. Calculations showed that the extent of basal line broadening cannot be attributed to the secondary effect of strain from a-type dislocations, i.e., dislocations with Burgers vectors parallel with the basal plane. It is concluded that most of the line broadening observed was the result of intergranular strain distributions. These distributions are most prominent for grains oriented with their c-axes perpendicular to the tensile-deformation axis and resulted in basal-plane line broadening even when there were few, if any, c-component dislocations present. This article is based on a presentation made in the symposium entitled “Defect Properties and Mechanical Behavior of HCP Metals and Alloys” at the TMS Annual Meeting, February 11–15, 2001, in New Orleans, Louisiana, under the auspices of the following ASM committees: Materials Science and Critical Technology Sector, Structural Materials Division, Electronic, Magnetic & Photonic Materials Division, Chemistry & Physics of Materials Committee, Joint Nuclear Materials Committee, and Titanium Committee.     

International statements and definitions of the precautionary principle

The precautionary principle (PP), according to one of its definitions, says that lack of certainty, given the current scientific and technological knowledge, shall not delay effective and proportionate actions to prevent hazards, taking into account cost-benefit considerations. Rather than being a single principle, a variety of statements of the PP are found in international treaties and other documents. Apart from any specific legal force of the documents, countries (e.g., France) have used these statements as a starting point for their own guidance documents and regulations for addressing specific environmental and health issues, for example regulation of genetically modified organisms. Thus, any discussion of the precautionary principle must address a complex legal and regulatory situation. We briefly review different statements of the PP and important commentary, largely from the European Union. We provide references to the original source documents (many of which are found in English on the World Wide Web).     

WWRF - the Wireless World Research Forum

Third generation mobile radio systems are currently being deployed in different regions of the world. Future systems beyond the third generation are already under discussion in international bodies and forums such as ITU, WWRF and R&D programmes of the European Union and in other regions. These systems will determine the research and standardisation activities in mobile and wireless communication in the next years. Based on experience of the third generation, future systems will be developed mainly from the user perspective with respect to potential services and applications including traffic demands. Therefore, the Wireless World Research Forum was launched in 2001 as a global and open initiative of manufacturers, network operators, SMEs, R&D centres and the academic domain. WWRF is focused on the vision of such systems - the Wireless World-and potential key technologies. This paper describes the international context of activities on systems beyond third generation, the goals, objectives and structure of WWRF, the user perspective as the starting point for a future system design and the key enabling technologies for the Wireless World.