An observation system simulation experiment for the impact of landsurface heterogeneity on AMSR-E soil moisture retrieval

Using a high-resolution hydrologic model, a land surface microwave emission model (LSMEM), and an explicit simulation of the orbital and scanning characteristics for the advanced microwave sensing radiometer (AMSR-E), an observing system simulation experiment (OSSE) is carried out to assess the impact of land surface heterogeneity on large-scale retrieval and validation of soil moisture products over the U.S. Southern Great Plains using the 6.925 GHz channel on the AMSR-E sensor. Land surface heterogeneity impacts soil moisture products through the presence of nonlinearities in processes represented by the LSMEM, as well as the fundamental inconsistency in spatial scale between gridded soil moisture imagery derived from in situ point-scale sampling, numerical modeling, and microwave remote sensing sources. Results within the 575000 km² Red-Arkansas River basin show that, for surfaces with vegetation water contents below 0.75 kg/m², these two scale effects induce root mean squared errors (RMSEs) of 1.7% volumetric (0.017 cm_water³/cm_soil³ ) into daily 60 km AMSR-E soil moisture products and RMS differences of 3.0% (0.030 cm_water/3cm_soil³ ) into 60 km comparisons of AMSR-E soil moisture products and in situ field-scale measurements of soil moisture sampled on a fixed 25-km grid     

Optical quality GaInAs grown by molecular beam epitaxy

Ga₄₇In₅₃As films have been grown by molecular beam epitaxy (MBE) on InP substrates. The unintentionally doped material has a free electron concentration of 8 × 10¹⁵cm^-3 and exhibits sharp (~5 meV linewidth) exciton recombination in the 4K photoluminescence. The films were grown on (100) InP surfaces which were thermally cleaned in the arsenic beam. The effects of the substrate temperature during growth, the Ga to In flux ratio and the group V to group III flux ratio on the 4K photoluminescence are reported.     

The properties of annealed AlN films deposited by pulsed laser deposition

AlN films deposited on SiC or sapphire substrates by pulsed laser deposition were annealed at 1200°C, 1400°C, and 1600°C for 30 min in an inert atmosphere to examine how their structure, surface morphology, and substrate-film interface are altered during high temperature thermal processing. Shifts in the x-ray rocking curve peaks suggest that annealing increases the film density or relaxes the films and reduces the c-axis Poisson compression. Scanning electron micrographs show that the AlN begins to noticeably evaporate at 1600°C, and the evaporation rate is higher for the films grown on sapphire because the as-deposited film contained more pinholes. Rutherford backscattering spectroscopy shows that the interface between the film and substrate improves with annealing temperature for SiC substrates, but the interface quality for the 1600°C anneal is poorer than it is for the 1400°C anneal when the substrate is sapphire. Transmission electron micrographs show that the as-deposited films on SiC contain many stacking faults, while those annealed at 1600°C have a columnar structure with slightly misoriented grains. The as-deposited films on sapphire have an incoherent interface, and voids are formed at the interface when the samples are annealed at 1600°C. Auger electron spectroscopy shows that virtually no intermixing occurs across the interface, and that the annealed films contain less oxygen than the as-grown films.     

Design and fabrication of monolithically integrated DFB laser-wavelength duplexer transceivers for TPON/BPON access links

The fabrication and characterisation of monolithically integrated OEIC transceivers for use in optical subscriber access links are reported. A design incorporating DFB lasers, wavelength duplexers and a monitor photodiode, specific to the TPON/BPON passive optical network configuration is presented.<>     

Modeling of spiking analog neural circuits using organic semiconductor thin film transistors with silicon oxide nitride semiconductor gates

This paper uses the results of the characterization of amorphous semiconductor thin film transistors (TFTs) with the quasi-permanent memory structure referred to as silicon oxide nitride semiconductor (SONOS) gates, to model spiking neural circuits. SONOS gates were fabricated and characterized. In addition, MOSFETs using organic copper phthalocyanine (CuPc) were fabricated with these SONOS gates to demonstrate proof of concept performance. Analog spiking circuits were then modeled using these low performance TFTs to demonstrate the general suitability of organic TFTs in neural circuits. The basic circuit utilizes a standard comparator with charge and discharge circuits. A simple Hebbian learning circuit was added to charge and discharge the SONOS device. The use of these elements allows for the design and fabrication of high-density 3-dimensional circuits that can achieve the interconnect density of biological neural systems.     

Performance and Modeling of the MWIR HgCdTe Electron Avalanche Photodiode

The operation of the mid-wave infrared (MWIR) HgCdTe cylindrical electron injection avalanche photodiode (e-APD) is described. The measured gain and excess noise factor are related to the collection region fill factor. A two-dimensional diffusion model calculates the time-dependent response and steady-state pixel point spread function for cylindrical diodes, and predicts bandwidths near 1 GHz for small geometries. A 2 μm diameter spot scan system was developed for point spread function and crosstalk measurements at 80 K. An electron diffusion length of 13.4 μm was extracted from spot scan data. Bandwidth data are shown that indicate bandwidths in excess of 300 MHz for small unit cells geometries. Dark current data, at high gain levels, indicate an effective gain normalized dark density count as low as 1000 counts/μs/cm² at an APD gain of 444. A junction doping profile was determined from capacitance–voltage data. Spectral response data shows a gain-independent characteristic.     

Carbohydrates of rapeseed: A review

Graded extraction of oil-free, dehulled, rapeseed cotyledon meal with boiling aqueous ethanol, hot water, hot ammonium oxalate and finally sodium hydroxide yielded a series of fractions. The composition, identification and structural evaluation of the various products is presented and the results compared with those obtained from other seeds.     

On the variability of manual spike sorting

The analysis of action potentials, or "spikes," is central to systems neuroscience research. Spikes are typically identified from raw waveforms manually for off-line analysis or automatically by human-configured algorithms for on-line applications. The variability of manual spike "sorting" is studied and its implications for neural prostheses discussed. Waveforms were recorded using a micro-electrode array and were used to construct a statistically similar synthetic dataset. Results showed wide variability in the number of neurons and spikes detected in real data. Additionally, average error rates of 23% false positive and 30% false negative were found for synthetic data.     

Poles and Zeros – Examples of the Behavioral Approach Applied to Discrete Linear Repetitive Processes

In this paper the behavorial approach is applied to discrete linear repetitive processes, which are class of 2D systems of both systems theoretic and applications interest. The main results are on poles and zeros for these processes, which have exponential trajectory interpretations. Published online: April 2006     

Giga-hertz rate single slope conversion technique with 512-phase RTWO

In this paper, an 8-bit 1.2 Gsample/s single-slope ADC architecture is presented. The proposed technique utilizes the picosecond-accurate phases of a rotary traveling wave oscillator (RTWO). The proof-of-concept test chip is fabricated in a 0.18-μm CMOS process and occupies 1.3 mm  ×  1.3 mm of die area. Power consumption is 36 mW for the core and 135 mW for on-chip clocks.