X-ray-based measurement of composition during electron beam melting of AISI 316 stainless steel: Part II. Evaporative processes and simulation

An energy dispersive X-ray (EDX) detector mounted on a laboratory scale electron beam furnace (30 kW) was employed to assess the potential use of X-rays as a means of on-line composition monitoring during electron beam (E B) melting of alloys. The design and construction of the collimation and protection systems used for the EDX are described in Part I. In Part II, a mathematical simulation of the heat, mass, and momentum transfer was performed for comparison to the EDX and vapor deposition results. The predicted flow patterns and evaporation rates are used to explain the differences between the two experimental methods. For the EDX spectra measured, the X-rays generated were from the center of the hearth where fluid flow rising from the bulk of the pool is sufficient to maintain the bulk composition despite the high evaporative flux from the surface. The flow moves radially outward from the center of the pool, with the volatile species being depleted. The vapor deposition technique measures the entire region, giving an average surface composition, and it therefore differs from the EDX results, which gave a near bulk composition. This combined study using in-situ EDX measurements and numerical simulations both provided an insight into the phenomena controlling the evaporation in an EB-heated system and demonstrated the viability of using EDX to measure the bulk composition during EB melting processes.     

Location and calculation-free node-scheduling schemes in large wireless sensor networks

In wireless sensor networks that consist of a large number of low-power, short-lived, unreliable sensors, one of the main design challenges is to obtain long system lifetime without sacrificing system original performance (sensing coverage and sensing reliability). To solve this problem, one of the potential approaches is to identify redundant nodes at the sensing interface and then assign them an off-duty operation mode that has lower energy consumption than the normal on-duty mode. In our previous work [J. Wireless Commun. Mobile Comput. 3 (2003) 271; Processing of ACM Wireless Sensor Network and Application Workshop 2002, September 2002], we proposed a node-scheduling scheme, which can provide a 100% sensing coverage preservation capability. This, however, requires each node to be aware of its own and its neighbors’ location information. Also, in that scheme, each node has to do accurate geometrical calculation to determine whether to take an off-duty status. In this paper, we propose and study several alternative node-scheduling schemes, which cannot completely preserve the original system coverage, but are nonetheless light-weighted and flexible compared with the previous one. Our simulation results compare these schemes with the previous one and demonstrate their effectiveness.     

Effect of spinneret hole diameter on the spinning and properties of acetate fibre

Conclusions The effect of the number and diameter of spinneret holes on hole clogging and the properties of acetate yarns has been investigated under manufacturing conditions.On reducing spinneret hole diameter and increasing the number of holes, the strength and fatigue properties are raised, but the elongation of acetate yarn is reduced.Translated from Khimicheskie Volokna, No. 1, pp. 29–30, January–February, 1986.     

Execution cache-based microarchitecture for power-efficient superscalar processors

This paper investigates a possible solution to the problem of power consumption in superscalar, out-of-order processors by proposing a new microarchitecture, specifically designed to reduce increasing power requirements of high-end processors. More precisely, we show that by modifying the well-established superscalar processor architecture, significant savings can be achieved in terms of power consumption. Our approach aims at limiting the growing amount of power used in a typical processor for dynamic optimizations (including out-of-order scheduling and register renaming). Our proposed approach achieves significant power savings by reusing as much as possible from the work done by the front-end of a typical superscalar, out-of-order pipeline, via the use of a special cache nested deeply into the processor structure. By reusing instructions that are already decoded, reordered, and have their registers already renamed, the front end of the pipeline can be turned off for large periods of time with significant savings in the overall power consumption. Experimental results show up to 35% (30% on average) savings in average energy per committed instruction, and 35% (20% on average) savings in energy-delay product, with about 9% average performance loss, over a large spectrum of SPEC95 and SPEC2000 benchmarks.     

The nature and role of incoherent interphase interfaces in diffusional solid-solid phase transformations

In this article, some views on the nature of incoherent interphase interfaces, and their role in the nucleation and growth processes governing the evolution of microstructure in solid-state diffusional transformations (reconstructive transformations), are explored. It is argued that essentially incoherent interfaces can be involved in the initiation and propagation of polymorphic transformations and massive transformations as well as in various precipitation phenomena in metallic and ceramic systems. Similar views have already been advanced earlier in connection with studies of massive transformations. Faceting along the interphase interface during nucleation and growth can derive from thermodynamic, kinetic, and crystallographic factors independent of the bicrystallography of the conjugate phases. This idiomorphic behavior can be relevant to both intergranular and intragranular phase formation. The concept of one-dimensional (1-D) commensuration of phases through plane edge-to-edge/row matching is an interesting extension of the classic ideas of coherency and bicrystallography and potentially important in characterizing the behavior of certain types of boundaries. However, the general importance of these geometrical relations in real and reciprocal space will depend on the depth of the energy wells in orientation space associated with these special boundaries. This article is based on a presentation made in the “Hume-Rothery Symposium on Structure and Diffusional Growth Mechanisms of Irrational Interphase Boundaries,” which occurred during the TMS Winter meeting, March 15–17, 2004, in Charlotte, NC, under the auspices of the TMS Alloy Phases Committee and the co-sponsorship of the TMS-ASM Phase Transformations Committee.     

Testing interconnections to static RAMs

A method for testing the interconnections of ordinary static RAMs with a processor that has a boundary-scan register and an IEEE 1149.1 test-access port is described. The method uses an enhanced boundary-scan-register design that manipulates the test-access-port controller states to meet the static RAM's timing constraints. The implementation is more economical than a boundary-scan register that strictly conforms to IEEE 1149.1. Test operation is more efficient, requiring a third of the number of scan operations. A test-pattern set and a method for detecting and diagnosing the interconnection faults on RAMs are also described. The test-pattern set can be enhanced as necessary to increase coverage and diagnosing ability and to handle any RAM configuration. The implementation of the proposed boundary-scan register is independent of the test algorithm used. It is believed that the methodology is extendable to RAMs that use an access protocol different from the one described, for example dynamic RAMs and synchronous RAMs     

The influence of annealing on the conductivity of magnesium films

Polycrystalline magnesium films were deposited under ultrahigh vacuum by thermal evaporation onto a cooled silica substrate. During the growth process of a film a number of lattice defects are incorporated. It was found that the defect density decreases with increasing thickness. An annealing study of the electrical resistance and defect density in magnesium films was made. The results were interpreted on the basis of Vand's theory. The function F₀ expressing the law of distribution of the decay energies exhibited a maximum. For thick films there was no appreciable variation in the activation energy with thickness. In this case the evaluated activation energy E was found to be about 0.35 eV. For very thin films this energy decreases with increasing thickness.     

Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates

High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.     

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.