全文获取类型
收费全文 | 755篇 |
免费 | 42篇 |
国内免费 | 17篇 |
专业分类
电工技术 | 30篇 |
综合类 | 28篇 |
化学工业 | 58篇 |
金属工艺 | 27篇 |
机械仪表 | 16篇 |
建筑科学 | 25篇 |
矿业工程 | 7篇 |
能源动力 | 7篇 |
轻工业 | 39篇 |
水利工程 | 14篇 |
石油天然气 | 11篇 |
武器工业 | 4篇 |
无线电 | 132篇 |
一般工业技术 | 25篇 |
冶金工业 | 322篇 |
原子能技术 | 1篇 |
自动化技术 | 68篇 |
出版年
2024年 | 3篇 |
2023年 | 8篇 |
2022年 | 13篇 |
2021年 | 11篇 |
2020年 | 15篇 |
2019年 | 12篇 |
2018年 | 9篇 |
2017年 | 8篇 |
2016年 | 13篇 |
2015年 | 12篇 |
2014年 | 22篇 |
2013年 | 29篇 |
2012年 | 30篇 |
2011年 | 31篇 |
2010年 | 25篇 |
2009年 | 29篇 |
2008年 | 34篇 |
2007年 | 25篇 |
2006年 | 24篇 |
2005年 | 22篇 |
2004年 | 23篇 |
2003年 | 11篇 |
2002年 | 15篇 |
2001年 | 9篇 |
2000年 | 8篇 |
1999年 | 13篇 |
1998年 | 102篇 |
1997年 | 65篇 |
1996年 | 47篇 |
1995年 | 22篇 |
1994年 | 21篇 |
1993年 | 21篇 |
1992年 | 9篇 |
1991年 | 6篇 |
1990年 | 4篇 |
1989年 | 12篇 |
1988年 | 8篇 |
1987年 | 3篇 |
1986年 | 5篇 |
1985年 | 1篇 |
1984年 | 3篇 |
1983年 | 2篇 |
1982年 | 4篇 |
1980年 | 4篇 |
1978年 | 1篇 |
1977年 | 5篇 |
1976年 | 14篇 |
1955年 | 1篇 |
排序方式: 共有814条查询结果,搜索用时 875 毫秒
51.
Using a modification of the protein A plaque assay, muramidase (lysozyme)-producing leucocytes were detected as plaque-forming cells. In the presence of anti-muramidase Ig and complement the secreted lysozyme resulted in lysis of protein-A-coated target erythrocytes. By the use of a monolayer technique individual plaque-forming cells could be identified by staining procedures. Granulocytes as well as monocytes were found to produce muramidase and thus to form plaques. This method could serve as a useful tool when studying lysozyme secretion. Furthermore, by the use of appropriate antisera, this method could be employed for the study of any cell type (any secretion), provided enough molecules are being secreted. 相似文献
52.
53.
54.
The shapes and firing rates of motor unit action potentials (MUAP's) in an electromyographic (EMG) signal provide an important source of information for the diagnosis of neuromuscular disorders. In order to extract this information from EMG signals recorded at low to moderate force levels, it is required: i) to identify the MUAP's composing the EMG signal, ii) to classify MUAP's with similar shape, and iii) to decompose the superimposed MUAP waveforms into their constituent MUAP's. For the classification of MUAP's two different pattern recognition techniques are presented: i) an artificial neural network (ANN) technique based on unsupervised learning, using a modified version of the self-organizing feature maps (SOFM) algorithm and learning vector quantization (LVQ) and ii) a statistical pattern recognition technique based on the Euclidean distance. A total of 1213 MUAP's obtained from 12 normal subjects, 13 subjects suffering from myopathy, and 15 subjects suffering from motor neuron disease were analyzed. The success rate for the ANN technique was 97.6% and for the statistical technique 95.3%. For the decomposition of the superimposed waveforms, a technique using crosscorrelation for MUAP's alignment, and a combination of Euclidean distance and area measures in order to classify the decomposed waveforms is presented. The success rate for the decomposition procedure was 90%. 相似文献
55.
针对CMM扫描线数据,进行了数据分层和数据排序,完成了数据拓扑关系的建立.研究了距离阈值法和向量角度法相结合的数据精简方法和基于分层维的特征提取技术.以基于分层维的数据处理技术研究为基础,提出了一种利用数据点特征的非均匀有理B样条(NURBS)曲面重构方法,在Solidworks中实现了实体模型的重建. 相似文献
56.
Zanoni E. Bigliardi S. Capelletti R. Lugli P. Magistrali F. Manfredi M. Paccagnella A. Testa N. Canali C. 《Electron Device Letters, IEEE》1990,11(11):487-489
Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high drain bias values (>4.0 V). The spectral distribution of the emitted photons in the 1.7-2.9-eV range does not correspond to a simple Maxwellian distribution function of the electron energies in the channel. Light emission is observed in correspondence with nonnegligible gate and substrate hole currents, due to the collection of holes generated by impact ionization 相似文献
57.
讨论了基于高性能单片机的双CPU的通用数控系统的设计。系统采用两个高性能单片机为处理器,处理器间相互通信,协调工作。软件采用模块化设计。使用时针对具体数控系统功能要求,将通用系统略加增删,便能满足客户需求,体现了数控系统的通用性。通过在STAR-06TQ数控涂漆机上的实际应用,证明本系统能够满足预期设计要求。 相似文献
58.
59.
G. Meneghesso B. Cogliati G. Donzelli D. Sala E. Zanoni 《Microelectronics Reliability》1997,37(10-11)
Large decreases in the drain current in the linear and low Vds region followed by a “kink” in the output Id-Vds characteristics have been found after hot electron stress test in AlGaAs/InGaAs/GaAs power pseudomorphic HEMT's. Decrease in the transconductance measured in linear region, increase in the drain parasitic resistance and trasconductance frequency dispersion have also been observed and attributed to the generation of electron traps in the gate-to-drain access region. 相似文献
60.
Accelerated Life Test of High Brightness Light Emitting Diodes 总被引:3,自引:0,他引:3
Trevisanello L. Meneghini M. Mura G. Vanzi M. Pavesi M. Meneghesso G. Zanoni E. 《Device and Materials Reliability, IEEE Transactions on》2008,8(2):304-311
Short-term accelerated life test activity on high brightness light emitting diodes is reported. Two families of 1-W light-emitting diodes (LEDs) from different manufacturers were submitted to distinct stress conditions: high temperature storage without bias and high dc current test. During aging, degradation mechanisms like light output decay and electrical property worsening were detected. In particular, the degradation in light efficiency induced by thermal storage was found to follow an exponential law, and the activation energy of the process was extrapolated. Aged devices exhibited a modification of the package epoxy color from white to brown. The instability of the package contributes to the overall degradation in terms of optical and spectral properties. In addition, an increase in thermal resistance was detected on one family of LEDs. This increase induces higher junction temperature levels during operative conditions. In order to correlate the degradation mechanisms and kinetics found during thermal stress, a high dc current stress was performed. Results from this comparative analysis showed similar behavior, implying that the degradation process of dc current aged devices is thermal activated due to high temperatures reached by the junction during stress. Finally, the different effects of the stress on two families of LEDs were taken into account in order to identify the impact of aging on device structure. 相似文献