Study of SO2 adsorption and thermal regeneration over activated carbon-supported copper oxide catalysts

The mechanisms of SO₂ adsorption and regeneration over activated carbon-supported copper oxide sorbent/catalysts were analyzed. Studies were carried out in a fixed-bed reactor equipped with a non-dispersive infrared gas analyzer to detect the reaction products and by using X-ray powder diffraction (XRPD) and temperature-programmed desorption (TPD) experiments to characterize the nature of the sulfate species and surface oxygen complexes. The results indicate that SO₂ was catalytically oxidized to SO₃ over a copper phase in the presence of gaseous oxygen, and then reacted with a copper site to form a sulfate linked to copper without desorption into the gas phase. The activated carbon support did not participate in this sulfation reaction. After the adsorption of SO₂, the exhausted sorbent/catalysts could be regenerated by direct heat treatment in inert gas at temperatures between 260 and 480 °C, while the neighboring surface oxygen complexes on the carbon surface were acting as the reducing agents to reduce CuSO₄ to Cu. During the subsequent adsorption process, the copper is rapidly oxidized by oxygen in the flue gas.     

α-Alumina and spinel react into single-phase high-alumina spinel in <3 seconds during flash sintering

In situ X-ray diffraction measurements at the Advanced Photon Source show that α-Al₂O₃ and MgAl₂O₄ react nearly instantaneously and completely, and nearly completely to form single-phase high-alumina spinel during voltage-to-current type of flash sintering experiments. The initial sample was constituted from powders of α-Al₂O₃, MgAl₂O₄ spinel, and cubic 8 mol% Y₂O₃-stabilized ZrO₂ (8YSZ) mixed in equal volume fractions, the spinel to alumina molar ratio being 1:1.5. Specimen temperature was measured by thermal expansion of the platinum standard. These measurements correlated well with a black-body radiation model, using appropriate values for the emissivity of the constituents. Temperatures of 1600-1736°C were reached during the flash, which promoted the formation of alumina-rich spinel. In a second set of experiments, the flash was induced in a current-rate method where the current flowing through the specimen is controlled and increased at a constant rate. In these experiments, we observed the formation of two different compositions of spinel, MgO•3Al₂O₃ and MgO•1.5Al₂O₃, which evolved into a single composition of MgO•2.5Al₂O₃ as the current continued to increase. In summary, flash sintering is an expedient way to create single-phase, alumina-rich spinel.     

Effect of silanes on the morphology,hydrophobicity, and dynamical mechanical properties of polyimide/silica hybrid membranes

Polyimide (PI)/silica hybrid membranes with high contact angles were prepared through the in situ sol–gel process. The precursor, poly(amic acid) with controlled block chain length, was synthesized using 4,4′‐diaminodiphenyl ether (ODA), 3,3′,4,4′‐benzophenone‐tetracarboxylic dianhydride (BTDA) and 3‐aminopropyl‐trimethoxysilane (APrTMOS) or 3‐aminopropyldimethylethoxysilane (APDiMOS). And then, phenyltrimethoxysilane (PTS) or tetramethoxysilane (TMOS) or methyltrimethoxysilane (MTrMOS) was respectively, added to the above polyamic acid and mixed thoroughly. Following curing reaction, the PI/silica hybrid membranes with different cross‐linkages, silica content, and hydrophobic properties were prepared. The effect on the formation of PI imide ring during imidization reaction is increased as the increase of silanes content and characterized by frequency shiftment and absorbance ratio of Fourier transform infrared (FTIR) measurements. All the hybrid membranes show high transparency though with high silica contents. The storage modulus, tan δ, and damping intensity by DMA measurements are all correlated with silane content or block chain length. And all these membranes with silane content possess high contact angle as compared to pure PI without any silanes added and the contact angles increase with increasing the silane content. © 2011 Wiley Periodicals, Inc. J Appl Polym Sci, 2011     

Overview of emerging nonvolatile memory technologies

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.     

Influence of A-site Ba substitution on microwave dielectric properties of (BaxMg1−x)(A0.05Ti0.95)O3 (A=Zr,Sn) ceramics

The microwave dielectric properties of (Ba_xMg_1−x)(A_0.05Ti_0.95)TiO₃ (A=Zr, Sn) ceramics were investigated with regard to substitution of Ba for Mg of A-site. The microwave dielectric properties were correlated with the Ba content. With an increase in Ba content from 0.01 to 0.1, the dielectric constant and the τ_f value increased, but the Q×f value decreased. The sintered (Ba_xMg_1−x)(Zr_0.05Ti_0.95)TiO₃ (called B_xMZT) ceramics had a permittivity in the range of 19.1−20.6, quality factor from 180,000 to 25,000 GHz, and variation in temperature coefficient of resonant frequency from −35 to −39 ppm/°C with increasing composition x. For sintered (Ba_xMg_1−x)(Sn_0.05Ti_0.95)TiO₃ (called B_xMST) ceramics, the dielectric constant increased from 19 to 20.5, Q×f value increased from 120,000 to 37,000 (GHz), and the τ_f value increased from −50 to −3.3 ppm/°C as the x increased from 0.01 to 0.1. When A=Sn and x=0.1, (Ba_0.1Mg_0.9)(Sn_0.05Ti_0.95)TiO₃ ceramics exhibited dielectric constant of 20.5, Q×f value of 37,000 (GHz), and a near-zero τ_f value of −3.3 ppm/°C sintered at 1210 °C for 4 h.     

Isothermal and non-isothermal kinetic and safety parameter evaluation of tert-butyl(2-ethylhexyl)monoperoxy carbonate by differential scanning calorimetry

Tert-butyl(2-ethylhexyl)monoperoxy carbonate (TBEHC) 95 mass% is intrinsically a very unstable substance that can induce self-decomposition even under normal atmospheric condition. During storage, TBEHC 95mass% can release an enormous amount of heat if the temperature is higher than the recommended storage temperature, due to the self-accelerating reaction having been ignited. In this study, TBEHC 95mass% was tested by differential scanning calorimetry (DSC) under five heating rates (1, 2, 4, 6, and 8 °C/min) and four isothermal conditions (120, 125, 130, and 135 °C) to evaluate the basic kinetic and safety parameters of time to maximum rate (TMR), self-accelerating decomposition temperature (SADT), and temperature of no return (TNR). Under runaway reaction TBEHC 95 mass% releases a great quantity of heat. This study establishes an important guiding principle for related manufacturing processes worldwide.     

Formation of Highly Aligned,Single‐Layered,Hollow Fibrous Assemblies and the Fabrication of Large Pieces of PLLA Membranes

Large pieces of paper‐thin PLLA membranes are prepared and characterized as single‐layered hollow fibrous assemblies with an extremely high degree of fiber alignment. The diameter of the electrospun hollow fibers is in the range of some tens of micrometers with a wall thickness of a few micrometers. They are best described as 2D arrays of highly aligned microtubes. The mechanical properties of the membranes are studied. A processing map is constructed using the applied electric field strength and the concentration (viscosity) of the electrospinning dope. The influence of factors such as the field strength and weight and viscosity of the jetted solutions is discussed. The results will help in the future fabrication of highly anisotropic scaffolds for tissue engineering applications.

     

Improving the self-sintering of mesocarbon-microbeads for the manufacture of high performance graphite-parts

Fine spherical mesocarbon-microbeads (MCMBs), having average particle sizes of 24.57, 11.69 and 10.74 μm, were mixed with various amounts of solid-resins (with high β-resin contents) to prepare graphite-matrixes in self-sintering reactions. The results indicate that the self-sintering reactions of the MCMBs can be significantly improved by enhancing the contacting-pattern of the mixture. MCMBs with smaller particle sizes favor self-sintering reactions and can be used to form high-quality graphite-matrixes. In addition, the self-sintering reactions are strongly dependent on the β-resin content of the raw materials. The bending strength of the graphite-matrixes increases, while the density of the graphite-matrixes decreases, with an increase of the β-resin content in the raw materials. The optimum β-resin content in the mixtures needed to obtain high density graphite-matrixes is approximately 5.0 wt.%.