水溶性油墨用富马酸改性松香树脂的研制

介绍了一种水溶性富马酸改性松香树脂的制备方法 ,选取了较佳的工艺条件 ,本产品经国内几家油墨厂使用 ,结果表明适合水溶性油墨的应用要求     

环境中氚和碳-14

本文介绍了加拿大恰克河实验室有关氚和碳－14在环境中行为和评价的研究。     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.     

基于规则的光学邻近矫正中规则的相关处理

讨论了如何选择适当的规则,如何建立简洁实用的规则库,如何应用规则库.提出了四种主要的光学邻近矫正规则,在实验结果中列举了规则库中的部分数据.利用规则矫正后的版图光刻得到的硅片图形有了明显的改善.规则库的自动建立部分 (OPCL)是基于规则的光学邻近矫正系统的重要组成部分.     

An efficient mixed algorithm of L-MEI and DDM for the wavescattering by a concave cylinder

In this paper, a localized MEI method (L-MEI) is developed and combined with the domain decomposition method (DDM) for the simulation of scattering by a concave cylinder. In the L-MEI, the whole domain is decomposed into many subdomains. Different from the conventional MEI method, the MEI coefficients of the L-MEI method in each subdomain are only dependent on the localized metrons that are defined in the subdomain. The localization of metrons has the following advantages: (1) speeding up the calculation of MEI coefficients and saving memory, (2) making the MEI method available for concave structures, and (3) obtaining a band sparse matrix directly without any modification     

基于数字信号处理器的直流电机控制系统

介绍了定点数字信号处理器（DSP）TMS320F240的一般性能及其在永磁无刷直流电机控制上的应用，给出了硬件设计方案、软件策略及输出结果。     

由乙腈一步法制备乙酸丁酯的研究

以丁醇和制备丙烯腈的副产物乙腈为原料 ,采用一步法合成了乙酸丁酯。通过正交实验得到了影响反应的 4种因素。确定了最佳的工艺条件为 :催化剂的量为样品质量的 40 % ;n(CH3CN)∶ n(C4 H9OH) =1∶ 1 .0 5 ;反应温度为 1 0 5℃ ;反应时间为 8h。在此反应条件下 ,乙酸丁酯的收率为 88.8% ,纯度可达 99.5 %。并用气相色谱及红外光谱对产品的纯度进行了表征     

低品位硼矿的富集加工技术

报道了青海大柴旦地区低品位硼矿富集加工的新工艺，该工艺使硼矿品位30％－35％，B2O3收率大于80％，该工艺路线已工业化。     

浅析嵌入式电脑及其发展趋势

主要介绍嵌入式电脑的构成特点、应用与发展前景。     

Improvement of RCA transistor using RTA annealing after theformation of interfacial oxide

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively