Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.     

Compact Dipole Antenna for Terrestrial Digital Multimedia Broadcasting Service

A compact dipole antenna for the terrestrial digital multimedia broadcasting (TDMB) application is presented. The length of the antenna is about 0.06λ at the TDMB resonance frequency of 190 MHz. Miniaturization of the antenna is achieved by using meander structures and lumped elements. The proposed antenna has two resonance frequencies and covers the TDMB band from 174 MHz to 216 MHz in Korea. The antenna has good impedance bandwidth and radiation characteristics for the TDMB. The experimental results of the designed dipole antenna are presented and analyzed.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Proton and hydrogen formation by cyclohexyl benzene during overcharge of Li-ion batteries

This study provides experimental evidence for proton and hydrogen formation caused by the anodic electropolymerization of cyclohexyl benzene (CHB), which is a popular electrolyte additive for overcharge protection of lithium-ion batteries (LIBs). It is found that considerable H₂ evolution is observed in overcharged LiCoO₂/graphite cells, especially when CHB is included as an electrolyte additive. In order to confirm the proton generation during the CHB oxidation, Pt/Pt-rotating ring disc electrode (RRDE) measurements are performed in 1 M Li(C₂F₅SO₂)₂N ethylene carbonate/ethyl methyl carbonate (1/2, v/v) solutions with and without CHB. The cathodic ring current is intimately correlated to the anodic disc current, and the cathodic reaction at the ring is determined to be the reduction of the proton. The proton generation efficiency during the CHB oxidation is as high as 90%. Proton liberation is also observed during the anodic decomposition of the electrolyte solvents, although it occurs in a much less stoichiometric way compared with that during the CHB oxidation.     

Silicon power MOSFET at low temperatures: A two-dimensional computer simulation study

Understanding how the structure of the unit-cell affects the cryogenic performance of a Si power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is an important step toward optimizing of the device for cryogenic operations. In this paper, numerical simulations of the Si power Double Diffused MOSFET’ (DMOS) are performed at room temperature and cryogenic temperatures. Physically based models for temperature dependent silicon properties are employed in the simulations. The performances of power DMOS’ with various unit-cell structures are compared at both room temperature and low temperatures. The effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for room temperature operation can be further optimized at cryogenic temperatures.     

A physics-based GaAs PHEMT noise model for low drain bias operation using characteristic potential method

A new physics-based noise model of a GaAs PHEMT is developed using the characteristic potential method (CPM). The model calculates the intrinsic noise current sources using CPM. Combined with the extrinsic noise parameters extracted from the measured S-parameters, the model reproduces four noise parameters of the device accurately under low drain bias voltages without using any fitting parameters. The model is verified with a 0.2-/spl mu/m GaAs PHEMT and shows excellent agreement with the measurements for all the noise parameters up to a drain voltage of 1 V Also, the proposed method allows the simulation of the microscopic noise distribution and thus allows one to obtain a physical understanding of noise mechanisms inside the device.     

Efficiency increase of an induction motor by improving coolingperformance

Improving the efficiency of induction motors, which are the most energy consuming electric machines in the world, saves much energy. The efficiency can be increased by improving cooling performance as well as by using better materials or by improving electromagnetic performance with better design. This paper presents the relationship between the efficiency or the losses and the temperature of coils with experiments as well as simulations by changing parameters such as the load and the flow rate of cooling air. The losses and the efficiency are calculated from an equivalent circuit method as well as experiments. Coil temperatures variation affects much on the efficiency. The internal cooling method is better than that of external cooling for the coil temperature reduction. Several cooling methods are compared focusing on the fan efficiency and performance, from which the values of the efficiencies of the motors are expected. The fan efficiency as well as the fan performance should be considered for the optimum fan design to increase the total efficiency of a motor. The simulations are validated by the comparison with the experiments     

Training sequence design and channel estimation of OFDM-CDMA broadband wireless access networks with diversity techniques

In this paper, an OFDM-CDMA system employing various diversity schemes is considered for a possible candidate of broadband wireless access networks and broadcasting applications. With an emphasis on a preamble design for multi-channel separation, we address a channel estimation based on the time-domain windowing and its imperfectness in OFDM-based multiple-antenna transmission systems. By properly designing each preamble for multiple antennas to be orthogonal in the time domain, the channel estimation can be applied to the HIPERLAN/2 and IEEE 802.11a standards in the case of more than two transmit antennas. Also, the effect of diversity techniques on the performance of OFDM-CDMA based broadband wireless access networks is investigated and the maximum achievable diversity gain for a two-path Rayleigh fading environment is evaluated. Simulation results show that the OFDM-CDMA system applying a space-time-frequency diversity with a full-rate full diversity code can give the diversity of D=4 and D=8 for both multi-user cases of maximum user and half user capacities, respectively.     

A novel high-efficiency linear transmitter using injection-locked pulsed oscillator

This letter presents a novel high-efficiency linear transmitter using pulse-width modulation (PWM). An envelope of radio frequency (RF) input signal is modulated by the PWM. The modulated signal is applied to the gate bias of a class F injection-locked power oscillator and switches it on and off. By filtering the pulsed oscillating output signal of the injection-locked oscillator using high-Q bandpass filter, the input signal is restored. This technique enables the transmitter to have high efficiency with good linearity. Also, there is little distortion near saturation point of an active device. The measured results show efficiency of 54.6% and very good linearity in PCS band at 26.4-dBm output power.