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IEEE 802.11 protocol supports adaptive rate mechanism, which selects the transmission rate according to the condition of the wireless channel, to enhance the system performance. Thus, research of multi‐rate IEEE 802.11 medium access control (MAC) performance has become one of the hot research topics. In this paper, we study the performance of multi‐rate IEEE 802.11 MAC over a Gaussian channel. An accurate analytical model is presented to compute the system saturation throughput. We validate our model in both single‐rate and multi‐rate networks through various simulations. The results show that our model is accurate and channel error has a significant impact on system performance. In addition, our numerical results show that the performance of single‐rate IEEE 802.11 DCF with basic access method is better than that with RTS/CTS mechanism in a high‐rate and high‐load network and vice versa. In a multi‐rate network, the performance of IEEE 802.11 DCF with RTS/CTS mechanism is better than that with basic access method in a congested and error‐prone wireless environment. Copyright © 2008 John Wiley & Sons, Ltd.  相似文献   
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Montmorillonite type clay, (PK‐802) is modified by the bifunctional modifiers (2‐phenylimidazole/benzalkonium chloride, PI/BEN or 2‐methylimidazole/benzalkonium chloride, MI/BEN) with different ratio, which contain a curing agent, BEN, and the promoters/accelerator (PI and MI). These two modifying agents are simultaneously intercalated into the gallery space of pure PK‐802. The novolac cured epoxy nanocomposites are prepared with this modified clay by crosslinking polymerization reaction. Wide‐angle X‐ray diffraction is used to measure the resulting d‐spacing of modified PK‐802 and the nanocomposites. Thermo‐gravimetric analysis is used to characterize the thermal properties of the nanocomposites. The morphology of the nanocomposites is investigated using transmission electron microscopy techniques. Well dispersion of clay into the novolac cured epoxy‐clay nanocomposites resulted when simultaneously both the modifying agents with 5:5 mole ratios are used to modify the clay instead of using single modified agent. POLYM. COMPOS., 2008. © 2008 Society of Plastics Engineers  相似文献   
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Polyaniline (PANI) with nanowire (PANI‐(NW)) network structure (mean diameter 10–20 nm) was successfully deposited on a stainless steel (SS) electrode by a galvanostatic process. Platinum particles were deposited into the PANI nanowire network structure to result the PANI(NW)‐Pt composite electrode. The PANI(NW)‐Pt electrode was used as electrocatalysts for the electrochemical oxidation of methanol. The PANI nanowires and PANI(NW)‐Pt nanocomposite were characterized by scanning electron microscopy (SEM), X‐ray photoelectron spectroscopy (XPS), and UV–vis absorption spectroscopy. Nanowire morphology with an average diameter of 10–20 nm could be seen from scanning electron micrograph. Small amount (70 mμm) of spherical Pt particles could be deposited into the PANI(NW). Catalytic activity for the oxidation of methanol was studied by using cyclic voltammetry (CV). For comparative purposes, bulk Pt (deposited Pt on SS) and PANI nanowires based electrodes were tested. The PANI(NW)‐Pt nanocomposite electrode exhibited excellent catalytic activity for the electrooxidation of methanol in comparison to bulk Pt electrodes, which reveals that the PANI(NW)‐Pt nanocomposite electrodeis more promising for application in electrocatalyst as a support material. POLYM. COMPOS., 28:650–656, 2007. © 2007 Society of Plastics Engineers  相似文献   
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As packaging technology advances to wafer level chip scale packaging (WLCSP) to enable reduced chip size and manufacturing cost, circuit edit has become a critical issue for the fully packaged integrated circuits (ICs). These advanced package types cannot be rebuilt on a single chip; therefore, function testing after circuit edit of WLCSP faces challenges. Furthermore, there are routings at the redistribution layer of WLCSP ICs. Circuit edit was applied on both the chip and the package level. In this paper the focused ion beam was applied to mill the organic material of the package structure to expose underlying ICs, instead of chemically destroying the packaging. Metal line cutting and conductive path deposition were also developed by a beam-based technique. These new approaches make the direct edit of electrical circuitry possible not only in ICs but also at package level. Therefore, for the debug process and for failure analysis, the WLCSP ICs have negligible damage and negligible signal integrity loss by retaining the original packaging structure.  相似文献   
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Poly(arylene ether benzonitrile) (PAEBN) was synthesized with 2,6‐dichlorobenzonitrile and biphenol. PAEBNs with various molecular weights (MWs), 1,640,000 and 185,000 g/mol, were synthesized by control of the stoichiometry of the monomers and were blended with sulfonated poly(ether ether ketone) (SPEEK). The effects of MW on the water uptake, swelling, methanol permeability, and proton conductivity of the SPEEK/PAEBN blend membranes were investigated. The molecular mobility of the SPEEK/PAEBN blends was also examined in this study. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci, 2008  相似文献   
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We report the structure and emission properties of ternary (In,Ga)N nanowires (NWs) embedded with self‐assembled quantum dots (SAQDs). InGaN NWs are fabricated by the reaction of In, Ga and NH3 via a vapor–liquid–solid (VLS) mechanism, using Au as the catalyst. By simply varying the growth temperature, In‐rich or Ga‐rich ternary NWs have been produced. X‐ray diffraction, Raman studies and transmission electron microscopy reveal a phase‐separated microstructure wherein the isovalent heteroatoms are self‐aggregated, forming SAQDs embedded in NWs. The SAQDs are observed to dominate the emission behavior of both In‐rich and Ga‐rich NWs. Temperature‐dependent photoluminescence (PL) measurements indicate relaxation of excited electrons from the matrix of the Ga‐rich NWs to their embedded SAQDs. A multi‐level band schema is proposed for the case of In‐rich NWs, which showed an anomalous enhancement in the PL peak intensity with increasing temperature accompanies with red shift in its peak position.  相似文献   
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Eutectic Sn-3.5wt.%Ag alloy is one of the most promising lead-free solders in low temperature processes for wafer bumping. Near eutectic composition of deposited alloy films could be readily acquired by pulse electroplating with a proper combination of active ingredients including K4P2O7, KI, Sn2P2O7, and AgI, as well as polyethylene glycol (PEG), with molecular weights of 200, 600, 2,000, and 4,000, as an inhibitive agent. Pulse electroplating was carried out with current in alternating polarity to conduct electroplating and electropolishing sequentially. As a result, alloy films with grains of less than 1 μm and uniform surface morphology can be obtained. The addition of PEG was necessary for the stabilization of the plating baths to promote a wider process window for the desirable eutectic composition. Electrochemical characterization established that PEG with molecular weight of 4,000 exhibited the strongest inhibition behavior. In contrast, PEG with molecular weight of 200 demonstrated the least interference. Energy dispersive X-ray and differential scanning calorimeter data confirmed the formation of eutectic alloy as a function of deposition current density. X-ray diffraction results indicated that a biphasic structures of β-Sn and ε-Ag3Sn was present in the as-deposited film.  相似文献   
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