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971.
The influence of the substrate nature on the structure and morphology of ITO thin films grown by thermal evaporation in vacuum is investigated. The as-prepared metal films with Sn/In molar ratio of 0.1 were subsequently annealed for 2 h at 723 K in air (to obtain tin doped indium oxide), then annealed in vacuum at 523 K, followed by UV irradiation (to reduce the electrical resistivity). Irrespective of substrate nature, XRD data evidence a (222) preferential orientation in films. Substrate nature, annealing in vacuum and UV irradiation influence the structure, morphology, optical, electrical and surface wetting properties of the films' surface.  相似文献   
972.
In this work we present a bulk silicon technology platform able to cointegrate gate-all-around (GAA) MOSFETs and local SOI waveguides with pentagonal cross section. Wire diagonals of 100-800 nm are obtained using a lithographic resolution of 0.8 mum. Well-functioning triangular multigate MOSFETs are reported, and tested up to 150 degC. A significant increase is observed in the low-field mobility mu0 for small devices (Weffles500 nm), which is attributed to local volume inversion in the corners. Preliminary characterization of the optical waveguides is carried out, showing optical losses of a few dB/cm. The processing is entirely CMOS compatible, does not require access to advanced lithography equipment, and is based on a silicon bulk substrate. Thus, this technology might serve as the basis for a low-cost, high-performance optical signaling platform  相似文献   
973.
Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO2 gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold  相似文献   
974.
Modeling Crosstalk Effects in CNT Bus Architectures   总被引:1,自引:0,他引:1  
Carbon nanotubes (CNTs) have been widely proposed as interconnect fabric for nano and very deep submicron (silicon-based) technologies due to their robustness to electromigration. In this paper, issues associated with crosstalk among bus lines implemented by CNTs are investigated in detail. CNT-based interconnects are modeled and the effects of crosstalk on performance and correct operation are evaluated by simulation. Existing models are modified to account for geometries in bus architectures made of parallel single-walled nanotubes and a single multiwalled nanotube. New RLC equivalent circuits are proposed for these bus architectures. A novel bus architecture with low crosstalk features is also proposed. This bus architecture is made of dual-walled nanotubes arranged in parallel. In this architecture, the crosstalk-induced delay and corresponding uncertainty (as well as crosstalk-induced peak voltage) are significantly reduced; a modest area penalty is incurred. Reductions up to 59% for the crosstalk-induced delay and up to 81% for the crosstalk-induced peak voltage are reported. These results confirm that the proposed bus arrangement noticeably improves performance and provides reliable operation  相似文献   
975.
We report of a theoretical study on quasi-one dimensional unconventional charge density wave (UCDW) driven by electron–phonon interaction. Within mean field theory, we find that the wavevector dependence of the coupling leads to a momentum dependent single particle gap on the Fermi surface. The presence of small energy single particle excitations around the gap nodes significantly changes the optical conductivity compared to the conventional CDW result. In addition to that, the collective phase excitation arising from fluctuation of the order parameter leads to further qualitative changes of the conductivity and results in an effective mass that is nonmonotonic in temperature.   相似文献   
976.
Wafer-type piezoelectric transducers are effective transducers for the excitation and detection of ultrasonic Lamb waves in plate-like structures. Such transducers are, however, vulnerable to corrosion and physical damage when mounted in exposed locations. In this paper we describe an inductively coupled Lamb wave transducer that eliminates the need for direct electrical connections. Signals are coupled into and out of the transducer using two probe coils. In this paper we explore the operation of inductively coupled transducers both analytically and experimentally. Finite-element analysis is used to determine inductances and the coupling constant, and electrical circuit analysis to determine the transfer function and its dependence on the gap between the probe coils and the transducer. Experiments show that return signals of millivolt amplitude are obtained when the transducer is excited with 10-V amplitude pulses. These transducers are suitable for permanent mounting on structures to be monitored for cracks or flaws  相似文献   
977.
Joseph  D. Collins  S. 《IEEE sensors journal》2007,7(8):1191-1199
Logarithmic CMOS image sensors are appealing for their high-contrast and high-speed response but they require postprocessing to achieve high-quality images. Previously published work has explained the fixed pattern noise (FPN) in these image sensors using a steady-state analysis. This paper explains how the transient response of the readout circuit may also contribute to FPN. Thus, the performance of these CMOS cameras may be optimized with a proper understanding of the transient response, which is explained here through modeling and simulation with some experimental validation. In particular, the gain variation of a logarithmic camera is shown to be caused primarily by premature digitization. As logarithmic and linear active pixel sensors use similar circuits, some results in this paper, e.g., an analysis of readout capacitance, apply equally to the latter.  相似文献   
978.
A low-complexity circuit for on-sensor compression is presented. The proposed circuit achieves complexity savings by combining a single-slope analog-to-digital converter with a Golomb-Rice entropy encoder and by implementing a low-complexity adaptation rule. The adaptation rule monitors the output codewords and minimizes their length by incrementing or decrementing the value of the Golomb-Rice coding parameter k. Its hardware implementation is one order of magnitude lower than existing adaptive algorithms. The compression circuit has been fabricated using a 0.35 muM CMOS technology and occupies an area of 0.0918 . Test measurements confirm the validity of the design.  相似文献   
979.
We study the long-term strength of long cylindrical shells placed in aggressive media under the conditions of complex stressed states. The influence of these states on the long-term strength of the shells is described with the help of equivalent scalar stresses. The time to fracture of the shell is found according to the Rabotnov kinetic theory by using two parameters, namely, the degree of damage to the material and the concentration of the medium in the material of the shell. As the boundary condition on the fracture front, we use the condition of mass exchange. We study the interaction between the diffusion and fracture fronts. The time to fracture of the shell is found by using the solution of a system of integrodifferential equations. Under the assumption of mean level of concentration of the medium, we deduce explicit relationships between the times to fracture of the shell in aggressive and neutral media. __________ Translated from Fizyko-Khimichna Mekhanika Materialiv, Vol. 43, No. 2, pp. 17–24, March–April, 2007.  相似文献   
980.
Many zeranol immunoassay test kits cross-react with toxins formed by naturally occurring Fusarium spp. fungi, leading to false-positive screening results. This paper describes the evaluation and application of recently published, dry reagent time-resolved fluoroimmunoassays (TR-FIA) for zeranol and the toxin alpha-zearalenol. A ring test of bovine urine fortified with zeranol and/or alpha-zearalenol in four European Union National Reference Laboratories demonstrated that the TR-FIA tests were accurate and robust. The alpha-zearalenol TR-FIA satisfactorily quantified alpha-zearalenol in urine fortified at 10-30 ng ml(-1). The specificity-enhanced zeranol TR-FIA accurately quantified zeranol in the range 2-5 ng ml(-1) and gave no false-positive results in blank urine, even in the presence of 30 ng ml(-1) alpha-zearalenol. Zeranol TR-FIA specificity was demonstrated further by analysing incurred zeranol-free urine samples containing natural Fusarium spp. toxins. The TR-FIA yielded no false-positive results in the presence of up to 22 ng ml(-1) toxins. The performance of four commercially available zeranol immunoassay test kits was more variable. Three kits produced many false-positive results. One kit produced only one potential false-positive using a protocol that was longer than that of the TR-FIA. These TR-FIAs will be valuable tools to develop inspection criteria to distinguish illegal zeranol abuse from contamination arising from in vivo metabolism of Fusarium spp. toxins.  相似文献   
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