An evaluation of biological and abiotic controls for grapevine powdery mildew. 2. Vineyard trials

Grapevine powdery mildew ( Erysiphe necator) affects grape yield and fruit quality worldwide. Managers of conventional vineyards rely mainly on synthetic fungicides and sulfur to control powdery mildew, while in organic vineyards sulfur is the main control agent, often in rotation with canola-based oils, bicarbonates and biological control agents. The efficacy of those materials has not been evaluated critically under field conditions in Australia. Accordingly, a range of materials showing most promise in previous greenhouse trials (Crisp et al. 2006 Australian Journal of Grape and Wine Research 12 , pp. 192–202) were assessed via field trials in commercial vineyards. Applications of either milk or whey (alone, or mixed with a canola oil-based product), as well as applications of potassium bicarbonate (commercial formulation), all reduced the severity of powdery mildew compared with untreated vines. Eight applications of a 1:10 dilution of milk, 45 g/L whey powder or programs comprising rotations of potassium bicarbonate plus oil and whey, applied at 10–14 day intervals, reduced the severity of powdery mildew to levels not significantly different from that on vines sprayed with sulfur (wettable powder, 3–6 g/L). However, the relative control of powdery mildew by the test materials in field trials was dependent on the susceptibility of the grapevine cultivar and the extent of spray coverage achieved. In vineyards where highly susceptible cultivars were planted, and spray coverage was compromised, the resultant control of powdery mildew was reduced; and sometimes to commercially unacceptable levels.     

Use of citric acid for heavy metals extraction from contaminated sewage sludge for land application.

Recent studies revealed that organic acids such as citric and oxalic acids seemed to be more promising as chemical extracting agents for removal of heavy metals from contaminated sludge, since they are biodegradable and can attain a higher metal extraction efficiency at mildly acidic pH compared to other extracting agents. Results of a lab-scale study on the efficiency of citric acid in the extraction of chromium (Cr), copper (Cu), lead (Pb), nickel (Ni) and zinc (Zn) from anaerobically digested sludge, revealed that citric acid seemed to be highly effective in extracting Cr (at 100%), Cu (at 88%), Ni (at 98%) and Zn (at 100%) at pH 2.33, mostly at 5 days leaching time except for Cu and Zn, which are at 1 day and 2 h contact times respectively. Lead removal at the same pH was also high at 95% but at a longer leaching time of 11 days. At pH 3, citric acid seemed to be highly effective in extracting Pb (at 100%) at 1 day leaching time, although higher removals were also attained for Ni (70%) and Zn (80%) at only 2 h leaching time. Chemical speciation studies showed that Cr, Cu and Ni in the sludge sample seem to predominate in residual fractions, while Pb and Zn were found mostly bound to organic and inorganic matter forms, hence the potential of the sludge for land application.     

Teaching robust programming

Robust programming aims to prevent abnormal termination or unexpected actions and requires code to handle bad (invalid or absurd) inputs in a way that is consistent with the developer's intent. For example, if an internal error occurs, the program might terminate gracefully rather than simply failing, providing enough information for the programmer to debug the program and avoiding giving the user additional access or information. This article focuses on teaching these principles.     

Pseudorandom active UWB reflectors for accurate ranging

In this letter, the concept of pseudorandom active reflector, based on the ultra-wideband (UWB) technology, is introduced. It consists of a simple device that repeats a slightly delayed version of the received UWB signal only in certain time intervals according to a suitable pseudorandom time-hopping sequence. An example of application of this device for accurate ranging in precise location systems is given. The advantages of this solution are in the hardware simplicity (only the analog section is present), in the low power consumption of the reflector and in the low timing constraint regarding the relative transmitter and reflector clock rates.     

Low Temperature Physics at the Laboratoire National des Champs Magnétiques Pulsés in Toulouse

An overview over past and present activities and future developments at the Toulouse pulsed magnetic field facility is given, both as far as technical developments of the infrastructure, as well as low temperature physics performed at the LNCMP are concerned.     

Colloidal processing of polymer ceramic nanocomposite integral capacitors

Polymer ceramic composites form a suitable material system for low temperature fabrication of embedded capacitors appropriate for the MCM-L technology. Improved electrical properties such as permittivity can be achieved by efficient filling of polymers with high dielectric constant ceramic powders such as lead magnesium niobate-lead titanate (PMN-PT) and barium titanate (BT). Photodefinable epoxies as the matrix polymer allow fine feature definition of the capacitor elements by conventional lithography techniques. The optimum weight percent of dispersant is tuned by monitoring the viscosity of the suspension. The dispersion mechanism (steric and electrostatic contribution) in a slightly polar solvent such as propylene glycol methyl ether acetate (PGMEA) is investigated from electrophoretic measurements. A high positive zeta potential is observed in the suspension, which suggests a strong contribution of electrostatic stabilization. By optimizing the particle packing using a bimodal distribution and modified processing methodology, a dielectric constant greater than 135 was achieved in PMN-PT/epoxy system. Suspensions are made with the lowest PGMEA content to ensure the efficiency of the dispersion and efficient particle packing in the dried film. Improved colloidal processing of nanoparticle-filled epoxy is a promising method to obtain ultra-thin capacitor films (<2/spl mu/m) with high capacitance density and improved yield. Capacitance of 35 nF/cm/sup 2/ was achieved with the thinnest films (2.5-3.0 /spl mu/m).     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.