Optical signal routing using emission packet positioning of semiconductor heterostructure

We present a novel optical switching technique utilizing emission packet positioning of semiconductor heterostructure. A modulation-doped p-AlGaAs-GaAs heterostructure is employed to control spontaneous emission packet positioning with electric fields. Emission packets generated by optical input signals are brought over 150 /spl mu/m with electric fields, so the output fibers can detect the emission intensity as signals. The first-order analysis indicates that the drift velocity of minority electrons in GaAs limits the detectable maximum data rate and nanoseconds timescale signal routing operation at 20 Gb/s is possible at an electron drift velocity of 2/spl times/10/sup 7/ cm/s.     

Mathematical and experimental method to obtain the inverse modeling of nonsinusoidal and saturated synchronous reluctance motors

This paper presents new inverse modeling for synchronous reluctance motor (SyRM). This modeling is valid when the inductances are sinusoidal or nonsinusoidal and even when the machine is saturated. This technique involves the generation of constant torque curves as a function of two-phase currents in the Concordia's reference frame when the rotor angle is fixed. We also introduce an experimental method to obtain directly the inverse modeling. This practical method takes into account the saturation of the motor. This technique allows the reduction of the low torque ripple in the case of nonsinusoidal inductances.     

Trajectory segmentation for the autonomous control of backward motion for truck and trailer

For logistics centers the disposition and dispatch of goods has reached a high standard of automation. However, the trucks and trailers bringing and taking wares are driven manually. This offers a enormous potential for automation for the yards of logistics centers. The availability of this potential is correlated to the autonomous forward and backward motion control for standard transportation vehicles. By an experimental system it has been shown that truck and trailer can be maneuvered autonomously at a high degree of precision. For purposes of safety it is necessary to guarantee that at any instant of time the vehicle is within some predefined area. Therefore, this paper introduces the principle of safe cover segments which are never left by the vehicle in motion and defines rules for the connection of such segments forming a safe corridor.     

Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35-/spl mu/m laser for metropolitan applications

Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high T/sub 0/. Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25/spl deg/C-85/spl deg/C. Besides transmission is demonstrated up to 10 Gb/s at 25/spl deg/C on the same fiber, without penalty and bit-error-rate floor.     

A 50-MS/s (35 mW) to 1-kS/s (15 /spl mu/W) power scaleable 10-bit pipelined ADC using rapid power-on opamps and minimal bias current variation

A novel rapid power-on operational amplifier and a current modulation technique are used in a 10-bit 1.5-bit/stage pipelined ADC in 0.18-/spl mu/m CMOS to realize power scalability between 1 kS/s (15 /spl mu/W) and 50 MS/s (35 mW), while maintaining an SNDR of 54-56 dB for all sampling rates. The current modulated power scaling (CMPS) technique is shown to enhance the power scaleable range of current scaling by 50 times, allowing ADC power to be varied by a factor of 2500 while only varying bias currents by a factor of 50. Furthermore, the nominal power is reduced by 20%-30% by completely powering off the rapid power-on opamps during the sampling phase in the pipeline's sample-and-holds.     

Transient performance study of a brushless doubly fed twin stator induction generator

This paper presents theoretical, simulation, and experimental study of the brushless doubly fed twin stator induction generator (BDFTSIG) dynamics under vector control based on the orientation on the power machine stator flux. A complex transfer function is derived which links the control current and power winding current space vectors in the field coordinates. Based on this result, the transient response of the BDFTSIG to step changes in the control current is examined theoretically. The oscillatory transients are explained in detail and linked to control flux transients triggered whenever operation point of the generator is changed. Furthermore, BDFTSIG operation with closed loop control of the power machine active and reactive powers is examined theoretically and experimentally. It is shown that in the closed loop operation, the system damping may be reduced so that the PI controller gains must be properly selected to achieve a good transient response.     

Investigation of structural properties of ITO thin films deposited on different substrates

The influence of the substrate nature on the structure and morphology of ITO thin films grown by thermal evaporation in vacuum is investigated. The as-prepared metal films with Sn/In molar ratio of 0.1 were subsequently annealed for 2 h at 723 K in air (to obtain tin doped indium oxide), then annealed in vacuum at 523 K, followed by UV irradiation (to reduce the electrical resistivity). Irrespective of substrate nature, XRD data evidence a (222) preferential orientation in films. Substrate nature, annealing in vacuum and UV irradiation influence the structure, morphology, optical, electrical and surface wetting properties of the films' surface.     

Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon

In this work we present a bulk silicon technology platform able to cointegrate gate-all-around (GAA) MOSFETs and local SOI waveguides with pentagonal cross section. Wire diagonals of 100-800 nm are obtained using a lithographic resolution of 0.8 mum. Well-functioning triangular multigate MOSFETs are reported, and tested up to 150 degC. A significant increase is observed in the low-field mobility mu₀ for small devices (W_effles500 nm), which is attributed to local volume inversion in the corners. Preliminary characterization of the optical waveguides is carried out, showing optical losses of a few dB/cm. The processing is entirely CMOS compatible, does not require access to advanced lithography equipment, and is based on a silicon bulk substrate. Thus, this technology might serve as the basis for a low-cost, high-performance optical signaling platform     

N-Type Field-Effect Transistors Using Multiple Mg-Doped ZnO Nanorods

Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO₂ gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10^-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold