Flexible Electronics: Thin Silicon Die on Flexible Substrates

Silicon thinned to 50 mum and less is flexible allowing the fabrication of flexible and conformable electronics. Two techniques have been developed to achieve this goal using thinned die: die flip chip bonded onto flexible substrates [polyimide and liquid crystal polymer (LCP)] and die flip chip laminated onto LCP films. A key to achieving each of these techniques is the thinning of die to a thickness of 50 mum or thinner. Conventional grinding and polishing can be used to thin to 50 mum. At 50 mum, the active die becomes flexible and must be handled by temporarily bonding it to a holder die for assembly. Both reflow solder and thermocompression assembly methods are used. In the case of solder assembly, underfill is used to reinforce the solder joints. With thermocompression bonding of the die to an LCP substrate, the LCP adheres to the die surface, eliminating the need for underfill.     

用于大面积显示的低成本纳米管场发射显示器

我们验证了一个显示视频图像的阴极阵列,它基于6in对角线、QVGA分辨率的碳纳米管,采用了简单的低成本器件结构。该纳米管是利用选择性化学汽相沉积法生长在特定位置上的,对净化阴极具有良好的可控性。该器件结构只需要三个低分辩率的掩膜工序,开关电压为50V。此外,我们的器件设计为较长的显示寿命创造了条件。在一个较小的全熔接密封的试验显示器上,我们已经记录了超过3000小时的寿命,而电流仅下降了20%。     

Tilted superlattice composition profile determined by photoluminescence and thermal disordering

The composition profile of an (AlAs)_1/2(GaAs)_1/2 tilted superlattice is characterized for the first time. The tilted superlattice sample is thermally disordered, and the energy of the direct band gap photoluminescence peak is measured as a function of increasing layer interdiffusion. The shift in the photoluminescence peak energy after completely disordering the tilted superlattice is 39 meV. A theoretical model is used to simulate the change in band gap as a function of layer interdiffusion for several composition profiles. The profile that gives the best fit to the experimental data is chosen. The tilted superlattice composition profile is found to be sinusoidal, varying from Al_0.40Ga_0.60As to Al_0.60Ga_0.40As.     

Pocket pagers in lots of one CIM

The Fusion program, a method for agile, flexible computer integrated manufacturing (CIM) at Motorola's Paging Products Group, is discussed. Fusion's CIM and automated assembly system can manufacture a wide variety of different products on the same production line. The development of the Fusion program and how it differs from its predecessor, the Bandit program, are described     

Packaging of a 128 by 128 liquid-crystal-on-silicon spatial lightmodulator using self-pulling soldering

A self-pulling soldering technology has been demonstrated for assembling liquid crystal on silicon (LCOS) spatial light modulators (SLMs). Solder joints with different profiles and sizes are designed to provide vertical surface tension forces to control the gap accommodating the ferroelectric liquid crystal (FLC) layer in the range of a micron with sub-micron uniformity. This technology provides an automatic, batch assembly process for a LCOS SLM through one reflow process. The component designs and process optimization are described, and the first operational results are presented     

High-temperature quasi-continuous operation of optically pumpedCdZnTe/ZnTe multiple-quantum-well lasers at 620 nm

Low-lasing-threshold quasi-continuous optically pumped II-VI quantum-well lasers were operated well above room temperature at 620 nm. This result shows promise for high-repetition-rate, short-pulse generation by direct modulation of the injection current and also CW operation of future wide-gap II-VI diode lasers above room temperature     

Impurity ‘Hot Spots’ in MBE HgCdTe/CdZnTe

In this work, impurity ‘hot spot’ macro-defects—high impurity level macro-defect contaminates were examined. ‘Hot spots’ have very high localized concentrations of: K, Mg, Ni, Cr, Mn, Ca, Al, Na, Fe, and Cu. For example, these ‘hot spot’ macro-defects can have Cu concentrations >?1?×?10¹⁸ cm^?3. Focused ion beam scanning transmission electron microscopy analysis of four ‘hot spots’ was performed. The origin of ‘hot spot’ defects is unresolved—however, our analysis has shown ‘hot spots’ can arise due to molecular beam epitaxy spit defects and CdZnTe substrate defects. The estimated ‘hot spot’ density is ～?30 cm^?2. The presence of impurity ‘hot spot’ macro-defects in HgCdTe/CdZnTe is confirming evidence for the occurrence of L. Bubulac’s impurity ‘pipe’ mechanism.     

Novel frame buffer pixel circuits for liquid-crystal-on-silicon microdisplays

A 32 /spl times/ 16 liquid-crystal-on-silicon (LCOS) backplane with novel frame buffer pixels is designed and fabricated using the AMI Semiconductor's 0.5-/spl mu/m double-poly triple-metal CMOS process. The three novel pixel circuits described herein increase the brightness of an XGA LCOS microdisplay by at least 36% without sacrificing image contrast ratio. The increase of brightness is attributed to maximizing overall image view time, allowing an image to be displayed at full contrast while the next image is buffered onto the backplane. The new circuits achieve this by removing charge sharing and charge inducement problems shown in previously proposed frame buffer pixel circuits. Voltages on the pixel electrodes measured through rail-to-rail operational amplifiers with negative feedback vary from 0 to 4.25 V (6-V power source). All data voltage levels remain constant over a frame time with less than 1% drop, thus ensuring maximum contrast ratio. Modeling and experimental measurement on the fabricated chip show that these pixel circuits outperform all others to date based on storage time, data storage level, and potential for highest contrast ratio with maximum brightness.     

Very high-order microring resonator filters for WDM applications

High-order microring resonators having from 1 to 11 coupled cavities are demonstrated. These filters exhibit low loss, flat tops, and out-of-band rejection ratios that can exceed 80 dB. They achieve performance that is suitable for commercial applications.     

High-power single-mode simplified antiresonant reflecting opticalwaveguide (S-ARROW) distributed feedback semiconductor lasers

Simplified antiresonant-reflective-optical-waveguide distributed-feedback semiconductor lasers based on Al-free InGaAs-InGaAsP-InGaP materials are reported for the first time. Devices with 6.5-μm-wide emitting apertures operate single-frequency (λ=0.968 μm) and single-spatial-mode to 157-mW continuous-wave output power. The full-width at half-maximum of the lateral far-field pattern is 4.5°, in excellent agreement with theory. Relative intensity noise values as low as -154 dB/Hz are measured between 500 MHz and 8 GHz