Multiuser Detection for Out-of-Cell Cochannel Interference Mitigation in the IS–95 Downlink

This paper considers the application of multiuser detection techniques to improve the quality of downlink reception in a multi-cell IS–95 digital cellular communication system. In order to understand the relative performance of suboptimum multiuser detectors including the matched filter detector, optimum multiuser detection in the context of the IS–95 downlink is first considered. A reduced complexity optimum detector that takes advantage of the structural properties of the IS–95 downlink and exhibits exponentially lower complexity than the brute-force optimum detector is developed. The Group Parallel Interference Cancellation (GPIC) detector, a suboptimum, low-complexity multiuser detector that also exploits the structure of the IS–95 downlink is then developed. Simulation evidence is presented that suggests that the performance of the GPIC detector may be near-optimum in several cases. The GPIC detector is also tested on a snapshot of on-air data measured with an omnidirectional antenna in an active IS–95 system and is shown to be effective for extracting weak downlink transmissions from strong out-of-cell cochannel interference. The results of this paper suggest that the GPIC detector offers the most performance gain in scenarios where weak downlink signals are corrupted by strong out-of-cell cochannel interference.     

Algorithm transformation methods to reduce the overhead of software-based fault tolerance techniques

This paper introduces a framework that tackles the costs in area and energy consumed by methodologies like spatial or temporal redundancy with a different approach: given an algorithm, we find a transformation in which part of the computation involved is transformed into memory accesses. The precomputed data stored in memory can be protected then by applying traditional and well established ECC algorithms to provide fault tolerant hardware designs. At the same time, the transformation increases the performance of the system by reducing its execution time, which is then used by customized software-based fault tolerant techniques to protect the system without any degradation when compared to its original form. Application of this technique to key algorithms in a MP3 player, combined with a fault injection campaign, show that this approach increases fault tolerance up to 92%, without any performance degradation.     

Lateral ion implant straggle and mask proximity effect

Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.     

Laser-assisted sealing and testing for ceramic packaging of MEMS devices

In this work, a CO/sub 2/ laser-assisted silicon lid sealing process, utilizing Au80/Sn20 solder, for encapsulating gas breakdown test micro-electro-mechanical structures (MEMS) in a ceramic quad flatpack (CQFP) was studied. Wire bonded MEMS dies were sealed into CQFPs under various gas media, such as air, nitrogen, helium and vacuum. The gas breakdown test results showed a significantly higher breakdown voltage for vacuum packaged parts compared to those packaged in other various gas environments. Hermeticity testing according to MIL-STD-883E showed that the leak rate of the package was below 10/sup -8/ atm cc/s. The bonding was uniform and the bonding strength is believed to be comparable to the tensile strength of Au80/Sn20 solder.     

The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE

A number of factors contribute to the high n-type background carrier concentration (high 10¹⁵ to low 10¹⁶ cm⁻³) measured in MBE Ga_0.47In_0.53As lattice-matched to InP. The results of this study indicate that the outdiffusion of impurities from InP substrates into GalnAs epitaxial layers can account for as much as two-thirds of the background carrier concentration and can reduce mobilities by as much as 40%. These impurities and/or defects can be gettered at the surfaces of the InP by heat treatment and then removed by polishing. The GalnAs epitaxial layers grown on the heat-treated substrates have significantly improved electrical properties. Hall and SIMS measurements indicate that both donors and acceptors outdiffuse into the epitaxial layers during growth resulting in heavily compensated layers with reduced mobilities. The dominant donor species was identified by SIMS as Si, and the dominant acceptors as Fe, Cr and Mn.     

The monos memory transitor: Application in a radiation-hard nonvolatile RAM

The MONOS (metal-oxide-nitride-oxide-silicon) device is a prime candidate for use as the nonvolatile memory element in a radiation-hardened RAM (random-access memory). The endurance, retention and radiation properties of MONOS memory transistors have been studied as a function of post nitride deposition annealing. Following the nitride layer deposition, all devices were subjected to 800°C oxidation step and some were then annealed at 900°C in nitrogen. The nitrogen anneal produces an increase in memory window size of approximately 40%. The memory window center of the annealed devices is shifted toward more positive voltages and is more stable with endurance cycling. Endurance cycling to 10⁹ cycles produces a 20% increase in memory window size and a 60% increase in decay rate. For a radiation total dose of 10⁶ rads (Si), the memory window size is essentially unchanged and the decay rate increases approximately 13%. A combination of 10⁹ cycles and 10⁶ rads (Si) reduces the decades of retention (in sec) from 6.3 to 4.3 for a ±23-V 16-μsec write/erase pulse.     

Spectral Radiance Estimates of Leaf Area and Leaf Phytomass of Small Grains and Native Vegetation

Similarities and/or dissimilarities in radiance characteristics were studied among barley (Hordeum vulgare L.), oats (Avena fatua L.), spring and winter wheat (Triticum aestivum L.), and shortgrass prairie vegetation. The site was a Williams loam soil (fine-loamy mixed, Typic Argiborolls) near Sidney, Montana. Radiances were measured with a truck-mounted radiometer. The radiometer was equipped with four wavelength bands: 0.45 to 0.52, 0.52 to 0.60, 0.63 to 0.69, and 0.76 to 0.90 , ?m. Airborne scanner measurements were made at an altitude of 600 m four times during the season under clear sky conditions. The airborne scanner was equipped with the same four bands as the truck-mounted radiometer plus the following: 1.00 to 1.30, 1.55 to 1.75, 2.08 to 2.35, and 10.4 to 12.5 ?m. Comparisons using individual wave bands, the near IR/red ((0.76 to 0.90 ?m)/(0.63 to 0.69 ?m)) ratio and the normalized difference vegetation index (ND=(IR-red)/(IR+red)) showed that only only during limited times during the growing season were some of the small grains distinguishable from one another and from native rangeland vegetation. There was a common relation for all small grains between leaf area index and green leaf phytomass and between leaf area index or green leaf phytomass and the IR/red ratio.     

Speciation of arsenic, chromium, and vanadium in red mud samples from the Ajka spill site, Hungary

Results are presented from X-ray absorption spectroscopy based analysis of As, Cr, and V speciation within samples of bauxite ore processing residue (red mud) collected from the spill site at Ajka, Western Hungary. Cr K-edge XANES analysis found that Cr is present as Cr(3+) substituted into hematite, consistent with TEM analysis. V K-edge XANES spectra have E(1/2) position and pre-edge features consistent with the presence of V(5+) species, possibly associated with Ca-aluminosilicate phases. As K-edge XANES spectra identified As present as As(5+). EXAFS analysis reveals arsenate phases in red mud samples. When alkaline leachate from the spill site is neutralized with HCl, 94% As and 71% V are removed from solution during the formation of amorphous Al-oxyhydroxide. EXAFS analysis of As in this precipitate reveals the presence of arsenate Al-oxyhydroxide surface complexes. These results suggest that in the circumneutral pH, oxic conditions found in the Torna and Upper Marcal catchments, incorporation and sorption, respectively, will restrict the environmental mobility of Cr and As. V is inefficiently removed from solution by neutralization, therefore, the red mud may act as a source of mobile V(5+) where the red mud deposits are not removed from affected land.