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91.
Dong-Soo Yoon Jae Sung Roh Sung-Man Lee Hong Koo Baik 《Journal of Electronic Materials》2003,32(8):890-898
The effect of a thin RuOx layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuOx/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si
contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuOx/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no
formation of a thin RuOx layer at the RuOx surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film
by pre-annealing leads to the formation of a thin RuOx layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity
of diffusion paths. In particular, the RuOx layer in a nonstoichiometric state is changed to the RuO2-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer.
Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the
RuOx/TiN/poly-Si/Si contact system. 相似文献
92.
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96.
Ki Yong Lee Souhwan Jung 《Electronics letters》1998,34(16):1567-1568
The authors investigate the problem of nonlinear adaptive equalisation in the presence of intersymbol interference, additive white Gaussian noise and co-channel interference. An extended radial basis function (RBF) network is proposed, in which regression weights are used in the output layer and the hidden unit is defined to have the Gaussian formula with the Mahalanobis distance. It is shown by simulation that the proposed structure gives reduced computational complexity without performance degradation, compared to that of the conventional RBF equaliser 相似文献
97.
Boundary element analysis of thermal stress intensity factors for interface griffith and cusp cracks
Kang Yong Lee
Woon Cheon Baik
《Engineering Fracture Mechanics》1994,47(6):909-918The thermal stress intensity factors for interface cracks of Griffith and symmetric lip cusp types under vertical uniform heat flow in a finite body are calculated by the boundary element method. The boundary conditions on the crack surfaces are insulated or fixed to constant temperature. The relationship between the stress intensity factors and the displacements on the nodal point of a crack-tip element is derived. The numerical values of the thermal stress intensity factors for an interface Griffith crack in an infinite body are compared with the previous solutions. The thermal stress intensity factors for a symmetric lip cusp interface crack in a finite body are calculated with respect to various effective crack lengths, configuration parameters, material property ratios and the thermal boundary conditions on the crack surfaces. Under the same outer boundary conditions, there are no appreciable differences in the distribution of thermal stress intensity factors with respect to each material property. However, the effect of crack surface thermal boundary conditions on the thermal stress intensity factors is considerable. 相似文献
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99.
Ki Hyun Kim Yong Hoon Kang Byoungho Lee 《Photonics Technology Letters, IEEE》1997,9(12):1610-1612
A photorefractive volume hologram was recorded and probed using light diffracted from a tapered optical fiber as a reference beam. A single-mode fiber (SMF) was chemically etched and tapered to give a complicated beam pattern, and it is shown that the tapered optical fiber can be utilized to increase the storage density of the volume hologram. Spatial selectivity of the volume hologram with this method was increased by two times compared to the normal SMF referencing, which is due to the fact that the complicated beam pattern has little correlation with its shifted version 相似文献
100.
制作压力传感器时,在二氧化硅层上淀积多晶硅膜,既可利用优良的机械特性,又可保证压敏电阻与衬底间具有良好的绝缘性,由此可大大提高器件的温度特性。介绍了一种多晶硅压力传感器的原理和设计。实验结果表明,这类传感器具有灵敏度好,精度高等特点,电路工作范围为0-250℃,且具有良好的温度稳定性。 相似文献