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101.
The influence of network density on the strain hardening behaviour of amorphous polymers is studied. The network density of polystyrene is altered by blending with poly(2,6-dimethyl-1,4-phenylene-oxide) and by cross-linking during polymerisation. The network density is derived from the rubber-plateau modulus determined by dynamic mechanical thermal analysis. Subsequently uniaxial compression tests are performed to obtain the intrinsic deformation behaviour and, in particular, the strain hardening modulus. At room temperature, the strain hardening modulus proves to be proportional to the network density, irrespective of the nature of the network, i.e. physical entanglements or chemical cross-links. With increasing temperature, the strain hardening modulus is observed to decrease. This decrease appears to be related to the influence of thermal mobility of the chains, determined by the distance to the glass-transition temperature (TTg).  相似文献   
102.
The basic methods of verifying continuous automatic belt weighers are described. A comparative analysis of these methods on the basis of experimental studies is made and ways of implementing the results in industry are recommended.  相似文献   
103.
The proliferation of both online and bricks and mortar outlet stores underscores the observation that secondary markets are readily accessible to retailers of short-life-cycle products. These secondary markets provide recourse channels for retailers to sell excess inventory of out-of-favor items at reduced prices when overstocking occurs in a primary market. We study the problem of determining when a retailer should terminate its primary selling season by selling remaining inventory on a secondary market. The retailer has a single opportunity to procure prior to a primary selling season consisting of multiple periods. Demand in each period is random, but correlated. At the end of each period, any remaining inventory incurs a holding cost. Then, based upon the current level of inventory and the cumulative demand-to-date, the retailer decides either to terminate the primary selling season by selling all or part of the remaining inventory on a secondary market, or to extend the current primary selling season by another period. We develop structural properties of the optimal policy for determining when to terminate the primary selling season, and we develop corresponding implications for procurement.  相似文献   
104.
Optical interconnection technology on the printed circuit board level is a key technology for future microelectronic equipment. The consideration of functional, technological, and economical requirements results in a hybrid solution, where electrical and optical interconnects are integrated into one substrate called electrical optical printed circuit board. The significant part of the entire design process for electrical optical printed circuit boards is marked by the design supporting modelling and simulation of optical interconnects. Based on an abstract model for an entire optical interconnect a simulation model for optical multimode-waveguides is presented, taking into account all significant waveguide properties. Apart from that, the modeling of active components (laser- and photo-diodes) is addressed.  相似文献   
105.
The application of barrier discharges at atmospheric pressure in air expands on the market of plasma technology, because it is an ecological and cost‐effective alternative to other processes of surface treatment. These plasmas usually consist of a multitude of spatially and temporally localized filaments, whose distribution should be as even as possible for homogeneous treatment. This holds especially for the plasma treatment of sensitive goods such as wool or other textiles. In equipment for continuous pass of material the barrier arrangements often consist of a system cylinder – cylinder or cylinder – plane, whereby the gap width changes locally. Space distribution and intensity of filaments has been investigated by means of short‐time photography and spatially resolved measurement of current distribution and energy distribution derived from it. The local dependency found can be explained by means of a capacitive equivalent circuit.  相似文献   
106.
The tensile elastic modulus (E), yield stress (σY) and microhardness (MH) of neat and binary and ternary blends of glassy semicrystalline ethylene–vinyl alcohol copolymer (EVOH), a glassy amorphous polyamide and a semicrystalline nylon‐containing ionomer covering a broad range of properties were examined. The tests were carried out on dry and water‐equilibrated samples to produce stiffer and softer materials, respectively. From the results, more accurate linear correlations were found to describe adequately the microhardness, modulus and yield stress of these strongly self‐associated polymers through hydrogen bonding. Copyright © 2003 Society of Chemical Industry  相似文献   
107.
108.
Gate-lag effects are characterized in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) by means of measurements and numerical device simulations. Gate lag increasingly affects device switching at increasing ungated recess extension, suggesting that responsible deep levels be located at the ungated, recess surface of the HFET. Gate lag diminishes by making the off-state gate-source voltage less negative and by increasing the drain bias. Increasing the temperature makes the turn-on transient faster at low drain bias, while slightly delaying it at high drain bias. Numerical device simulations accounting for acceptor-like traps at the ungated surface predict gate-lag phenomena in good agreement with experiments, reproducing correctly the observed bias and temperature dependences. Simulations show that surface states behave, during the turn-on transient, as hole traps capturing holes attracted at the ungated surface by the negative trapped charge.  相似文献   
109.
Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.  相似文献   
110.
The phenomenon of persistent tunneling photoconductivity was studied using the tunneling spectroscopy technique at liquid-helium temperature: the separation between the unoccupied levels in a δ-doped layer at the GaAs surface decreased after illumination. This decrease was due to an increase in the width of the quantum well of the δ-doped layer. For photon energies hv exceeding the GaAs band gap E g , this increase in the width of the quantum well was related to the accumulation of positive charge in the depth of GaAs induced by the generation of the electron-hole pairs and photoionization of deep centers. For hv < E g (including the case of CO2 laser), only photoionization is important. The experimental data agree with the self-consistent calculations. The critical temperature for the effect has been determined (T c = 45 K); at higher temperatures, the effect disappears.  相似文献   
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