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991.
Zukerman M. Wong E.W.M. Rosberg Z. Gyu Myoung Lee Hai Le Vu 《Communications Letters, IEEE》2004,8(2):116-118
We provide teletraffic models for loss probability evaluation of optical burst switching (OBS). We show that the popular Engset formula is not exact for OBS modeling and demonstrate that in certain cases it is not appropriate. A new exact model is provided. The various models are compared using numerical results for various OBS alternatives with and without burst segmentation. 相似文献
992.
993.
Degree of polarization degradation due to cross-phase modulation and its impact on polarization-mode dispersion compensators 总被引:1,自引:0,他引:1
Bononi A. Vannucci A. Orlandini A. Corbel E. Lanne S. Bigo S. 《Lightwave Technology, Journal of》2003,21(9):1903-1913
A novel analytical model is proposed to predict the cross-phase modulation (XPM)-induced depolarization in a two-channel transmission system, in which the Stokes' vector of each channel rotates around a space-invariant pivot by a time-varying angle which depends on the total instantaneous optical power in the fiber, on the angle between pump and probe input Stokes' vectors, and on the walk-off between channels. The model leads to a simple formula of the probe degree of polarization (DOP) which is validated both by simulation and experiment. The model helps identify the key physical factors that determine the XPM-induced performance degradation of DOP-based first-order polarization-mode dispersion compensators, and experiments that quantify such degradation are presented. 相似文献
994.
Bissessur H. Charlet G. Gohin E. Simonneau C. Pierre L. Idler W. 《Electronics letters》2003,39(2):192-193
By transmitting 40 channels over 300 km of TeraLight fibre, it is shown that optical differential phase shift keying can be used in 100 GHz-spaced 40 Gbit/s systems, with direct detection and a simple receiving filter. Chromatic dispersion tolerance around 300 ps/nm is also measured, compared to 70 ps/nm for NRZ. 相似文献
995.
Lianshan Yan Yeh C. Yang G. Lin L. Chen Z. Shi Y.Q. Willner A.E. Yao X.S. 《Lightwave Technology, Journal of》2003,21(7):1676-1684
We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system. 相似文献
996.
Recently, S.J. Lee proposed a blind feedforward symbol timing estimator that exhibits low computational complexity and requires only two samples per symbol (see IEEE Commun. Lett., vol.6, p.205-7, 2002). We analyze Lee's estimator rigorously by exploiting efficiently the cyclostationary statistics present in the received oversampled signal; its asymptotic (large sample) bias and mean-square error (MSE) are derived in closed-form expression. A new blind feedforward timing estimator that requires only two samples per symbol and presents the same computational complexity as Lee's estimator is proposed. It is shown that the proposed new estimator is asymptotically unbiased and exhibits smaller MSE than Lee's estimator. Computer simulations are presented to illustrate the performance of the proposed new estimator with respect to Lee's estimator and existing conventional estimators. 相似文献
997.
At present, WLANs supporting broadband multimedia communications are being developed and deployed around the world. Standards include HIPERLAN/2 defined by ETSI BRAN and the 802.11 family defined by the IEEE. These systems provide channel adaptive data rates up to 54 Mb/s (in a 20 MHz channel spacing) over short ranges up to 200 m. The HIPERLAN/2 standard also specifies a flexible radio access network that can be used with a variety of core networks, including UMTS. It is likely that WLANs will become an important complementary technology to 3G cellular systems and will typically be used to provide hotspot coverage. In this article the complementary use of WLANs in conjunction with UMTS is presented. In order to quantify the capacity enhancement and benefits of cellular/hotspot interworking we have combined novel ray tracing, software-simulated physical layer performance results, and optimal base station deployment analysis. The study focuses on an example deployment using key lamppost mounted WLAN access points to increase the performance (in terms of capacity) of a cellular network. 相似文献
998.
D. Mangelinck P. Gas T. Badche E. Taing F. Nemouchi C. Perrin-Pellegrino M. Vuaroqueaux S. Niel P. Fornara J. M. Mirabel L. Fares P. H. Albarede 《Microelectronic Engineering》2003,70(2-4):220-225
The formation of Ti silicides has been examined in flash memories with 0.25 μm linewidth by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It has been observed that, after the first rapid thermal process and the selective metal etch, there is no silicide on the source and on a majority of drain contacts while C49-TiSi2 is found on the gate. A pre-amorphisation implant increases drastically the formation of C49-TiSi2 in the drain zone while modifications of annealing conditions have little impact. These results indicate that the formation of C49-TiSi2 is most likely controlled by nucleation and that this nucleation is sensitive to both the width and the length of the reaction zone. The formation of a Ti rich silicide may play an important role in this nucleation by decreasing the driving force for the formation of C49-TiSi2. Curiously enough, the formation of C49-TiSi2 appears thus as a major concern for the salicide process in flash memories. 相似文献
999.
Kerber A. Cartier E. Pantisano L. Degraeve R. Kauerauf T. Kim Y. Hou A. Groeseneken G. Maes H.E. Schwalke U. 《Electron Device Letters, IEEE》2003,24(2):87-89
The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling. 相似文献
1000.
M. Blaho D. Pogany E. Gornik M. Denison G. Groos M. Stecher 《Microelectronics Reliability》2003,43(4):545-548
Current distribution in vertical double-diffused MOS (DMOS) transistors of a Smart Power Technology are investigated under high current, short duration operation conditions by means of a backside laser interferometric thermal mapping technique. DMOS devices of different areas are studied under pulsed gate forward operation mode and under electrostatic discharge (ESD)-like stress with floating and grounded gate. The internal behavior of the devices observed by thermal mapping under these stress conditions is correlated with the electrical characteristics. 相似文献