Summary of discussion on ‘Sciences related to pitch and coke usage in carbon manufacture’

This article is a brief summary of the Discussion session held after the presentation of the preceding papers at the conference organized by the Industrial Carbon and Graphite Group of the Society of Chemical Industry, London, March 1984.     

Formation and Properties of Calcium Aluminosilicate Glasses

The glass-forming region for calcium aluminosilicate glasses has been determined. A number of properties of these glasses (thermal expansion coefficient, glass transformation and dilatometric softening temperature, and refractive index) have been studied. The results of these measurements suggeq that the structures of these glasses may not as closely resemble those of alkali aluminosilicate glasses as is commonly assumed. Evidence is presented which suggests that the binary calcium aluminate glasses may be phase separated.     

Phase Studies Concerning Sintering in Aluminas Doped with Ti4+

Previous solid state analyses of sintering in Ti⁴⁺-doped-commercial alumina are shown to be in error because a liquid phase exists in the appropriate region of the Al₂O₃−TiO₃−Na₂Ophase diagram at least by 1350^°C, a temperature lower than that at which "solid state" studies were conducted. It is suggested that liquid-phase sintering is a much more common occurrence than was realized formerly.     

Toughening of Dental Porcelain by Tetragonal ZrO2 Additions

The effect on mechanical behavior of ZrO₂ additions to a dental porcelain was investigated. The ZrO₂ was introduced into the glassy matrix phase of the porcelain by refritting the all-glass porcelain constituent. X-ray diffraction indicated that a sizeable fraction of the ZrO₂ was retained in the tetragonal form after the porcelain was fired. Zirconia additions to the porcelain produced substantial improvements in fracture toughness, strength, and thermal shock resistance.     

High-gain pseudomorphic InGaAs base ballistic hot-electron device

A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In _0.12Ga_0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In_0.12Ga_0.88As was estimated to be about 380 meV