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51.
Robben J.; der Schueren J.Van; Verhasselt P.; Aert R.; Volckaert G. 《Protein engineering, design & selection : PEDS》1995,8(2):159-165
The deletion of nine residues from the C-terminus of the bacterialchloramphenicol acetyltransferase (CAT) results in depositionof the mutant protein in cytoplasmic inclusion bodies and lossof chloramphenicol resistance in Escherichia coli. This foldingdefect is relieved by C-terminal fusion of the polypeptide withas few as two residues. Based on these observations, efficientpositive selection for the cloning of DNA fragments has beendemonstrated. The cloning vector encodes a C-terminally truncatedCAT protein. Restriction sites in front of the stop codon allowthe insertion of target DNA, resulting in the production ofproperly folded CAT fusion proteins and regained chloramphenicolresistance. The positive selection of recombinants is accomplishedby growth of transformants on chloramphenicol-containing agarplates. The method appears particularly convenient for the cloningof DNA fragments amplified by the PCR because minimal informationto restore CAT folding can be included in the primers. The cloningof random sequences shows that the folding defect can be relievedby fusion to a wide variety of peptides, providing great flexibilityto the positive selection system. This vector may also contributeto the determination of the role of the C-terminus in CAT folding. 相似文献
52.
53.
A. A. Konstantinov N. V. Kurenkov A. B. Malinin T. E. Sazonova S. V. Sepman 《Atomic Energy》1989,67(3):696-698
Translated from Atomnaya Énergiya, Vol. 67, No. 3, pp. 215–216, September, 1989. 相似文献
54.
Nagpal R. Zambonelli F. Sirer E.G. Chaouchi H. Smirnov M. 《Intelligent Systems, IEEE》2006,21(2):50-58
No generally accepted principles and guidelines currently exist to help engineers design local interaction mechanisms that result in a desired global behavior. However, several communities have developed ways of approaching this problem in the context of niched application areas. Because the ideas underlying these approaches are often obscured or underemphasized in technical papers, the authors review the role of self-organization in their work. They provide a better picture of the status of the emerging field of self-organizing systems or autonomic computing. 相似文献
55.
56.
A method for fabricating single crystal blades that combines the techniques of seed crystals and selection is suggested. The method realizes the advantages of both techniques, i.e., the high structural perfection and the possibility of fabricating single crystals with specified spatial orientation. Metallographic and x-ray diffraction analyses are used to study the processes of nucleation of the single crystal structure of blade castings fabricated from high-temperature nickel alloys by the method of selection and seed crystals. A commercial process for fabricating cast single crystal turbine blades by the new method is suggested. 相似文献
57.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献
58.
In this work, a quantitative analysis is applied to resolve the newly reported polarity-dependent charge-to-breakdown (Q/sub BD/) data from thick oxides of 6.8 nm down to ultrathin oxides of 1.9 nm. Three independent sets of Q/sub BD/ data, i.e., n/sup +/poly/NFET stressed under inversion and accumulation, and p/sup +/ poly/PFET under accumulation are carefully investigated. The Q/sub BD/ degradation observed for p-type anodes, either poly-Si or Si-substrate, can be nicely understood with the framework of maximum energy released by injected electrons. Thus, this work provides a universal and quantitative account for a variety of experimental observations in the time-to-breakdown (T/sub BD/) and Q/sub BD/ polarity-dependence of oxide breakdown. 相似文献
59.
'Software defined radio' (SDR) is a technology that will appear in future generations of mobile phones, i.e. following the third-generation mobile phone technology that is currently being defined and developed. Early versions of 'pragmatic' SDR will allow the terminal to be reconfigured at any level of its protocol stack. Ultimately, the 'pure' SDR technology will allow a mobile phone or terminal to have its air interface software configured or reconfigured by other software (or software parameters) that have been downloaded to the terminal, e.g. over the air, or from a remote server via the Internet and one's personal computer (PC). A number of security issues arise with downloaded code that implements the air interface functions, and these may not be obvious simply from looking at the way PC software is updated on-line today. This paper starts with an outline of the code that allows a mobile phone to operate over a particular air interface. This sets the baseline for a discussion of the security issues surrounding the change of this code from one that is fixed and downloaded once only, to code that is reconfigurable during the life of a product. 相似文献
60.
A. N. Gudkov V. M. Zhivun A. V. Zvonarev V. V. Kovalenko A. B. Koldobskii Yu. F. Koleganov S. V. Krivasheev V. B. Pavlovich N. S. Piven' E. V. Semenova 《Atomic Energy》1989,66(2):115-118
Translated from Atomnaya Énergiya, Vol. 66, No. 2, pp. 100–103, February, 1989. 相似文献