全文获取类型
收费全文 | 4715篇 |
免费 | 45篇 |
国内免费 | 3篇 |
专业分类
电工技术 | 49篇 |
化学工业 | 715篇 |
金属工艺 | 65篇 |
机械仪表 | 65篇 |
建筑科学 | 143篇 |
矿业工程 | 6篇 |
能源动力 | 60篇 |
轻工业 | 274篇 |
水利工程 | 29篇 |
石油天然气 | 10篇 |
无线电 | 363篇 |
一般工业技术 | 565篇 |
冶金工业 | 2109篇 |
原子能技术 | 20篇 |
自动化技术 | 290篇 |
出版年
2021年 | 24篇 |
2020年 | 24篇 |
2019年 | 27篇 |
2018年 | 24篇 |
2017年 | 24篇 |
2016年 | 38篇 |
2015年 | 24篇 |
2014年 | 49篇 |
2013年 | 158篇 |
2012年 | 81篇 |
2011年 | 127篇 |
2010年 | 73篇 |
2009年 | 83篇 |
2008年 | 117篇 |
2007年 | 99篇 |
2006年 | 75篇 |
2005年 | 106篇 |
2004年 | 98篇 |
2003年 | 95篇 |
2002年 | 96篇 |
2001年 | 85篇 |
2000年 | 63篇 |
1999年 | 95篇 |
1998年 | 563篇 |
1997年 | 349篇 |
1996年 | 239篇 |
1995年 | 184篇 |
1994年 | 126篇 |
1993年 | 163篇 |
1992年 | 75篇 |
1991年 | 50篇 |
1990年 | 68篇 |
1989年 | 58篇 |
1988年 | 66篇 |
1987年 | 54篇 |
1986年 | 45篇 |
1985年 | 59篇 |
1984年 | 47篇 |
1983年 | 43篇 |
1982年 | 54篇 |
1981年 | 58篇 |
1980年 | 51篇 |
1979年 | 43篇 |
1978年 | 37篇 |
1977年 | 82篇 |
1976年 | 172篇 |
1975年 | 52篇 |
1974年 | 38篇 |
1973年 | 40篇 |
1972年 | 21篇 |
排序方式: 共有4763条查询结果,搜索用时 15 毫秒
51.
52.
53.
Demir H.V. Jun-Fei Zheng Sabnis V.A. Fidaner O. Hanberg J. Harris J.S. Jr. Miller D.A.B. 《Semiconductor Manufacturing, IEEE Transactions on》2005,18(1):182-189
This work reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage currents and planarization of the passivation material for metal interconnection and device integration. It is, however, challenging to planarize all devices at once. This technique offers wafer-scale passivation and planarization that is automatically leveled to the device top in the 1-3-/spl mu/m vicinity surrounding each device. In this method, a dielectric hard mask is used to define the device area. An undercut structure is intentionally created below the hard mask, which is retained during the subsequent polymer spinning and anisotropic polymer etch back. The spin-on polymer that fills in the undercut seals the sidewalls for all the devices across the wafer. After the polymer etch back, the dielectric mask is removed leaving the polymer surrounding each device level with its device top to atomic scale flatness. This integration method is robust and is insensitive to spin-on polymer thickness, polymer etch nonuniformity, and device height difference. It prevents the polymer under the hard mask from etch-induced damage and creates a polymer-free device surface for metallization upon removal of the dielectric mask. We applied this integration technique in fabricating an InP-based photonic switch that consists of a mesa photodiode and a quantum-well waveguide modulator using benzocyclobutene (BCB) polymer. We demonstrated functional integrated photonic switches with high process yield of >90%, high breakdown voltage of >25 V, and low ohmic contact resistance of /spl sim/10 /spl Omega/. To the best of our knowledge, such an integration of a surface-normal photodiode and a lumped electroabsorption modulator with the use of BCB is the first to be implemented on a single substrate. 相似文献
54.
Lutgendorf Susan K.; Russell Daniel; Ullrich Philip; Harris Tamara B.; Wallace Robert 《Canadian Metallurgical Quarterly》2004,23(5):465
This study prospectively examined the relationship between religious attendance, interleukin-6 (IL-6) levels, and mortality rates in a community-based sample of 557 older adults. Attending religious services more than once weekly was a significant predictor of lower subsequent 12-year mortality and elevated IL-6 levels (> 3.19 pg/mL), with a mortality ratio of .32 (95% confidence interval [CI] = 0.15,0.72; p 相似文献
55.
56.
Harris Grant T.; Rice Marnie E.; Quinsey Vernon L.; Lalumière Martin L.; Boer Douglas; Lang Carol 《Canadian Metallurgical Quarterly》2003,15(3):413
Four actuarial instruments for the prediction of violent and sexual reoffending (the Violence Risk Appraisal Guide [VRAG], Sex Offender Risk Appraisal Guide [SORAG], Rapid Risk Assessment for Sex Offender Recidivism [RRASOR], and Static-99) were evaluated in 4 samples of sex offenders (N = 396). Although all 4 instruments predicted violent (including sexual) recidivism and recidivism known to be sexually motivated, areas under the receiver operating characteristic (ROC) were consistently higher for the VRAG and the SORAG. The instruments performed better when there were fewer missing items and follow-up time was fixed, with an ROC area up to .84 for the VRAG, for example, under such favorable conditions. Predictive accuracy was higher for child molesters than for rapists, especially for the Static-99 and the RRASOR. Consistent with past research, survival analyses revealed that those offenders high in both psychopathy and sexual deviance were an especially high-risk group. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
57.
Theorists have predicted that repetition blindness (RB) should be absent for nonwords because they do not activate preexisting mental types. The authors hypothesized that RB would be observed for nonwords because RB can occur at a sublexical level. Four experiments showed that RB is observed for word-nonword pairs (noon noof), orthographically similar nonwords (glome glame), and identical repetitions (plass plass). More RB was found for words than for nonwords. Prior researchers may have failed to find RB for nonwords because display conditions that allow 2 words to be reliably encoded are insufficient for nonwords, or because observers coped with low ability to encode nonwords by using guessing strategies that do not require creating a mental type or tokenizing it. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
58.
ED Adamson 《Canadian Metallurgical Quarterly》1993,37(1):111-116
BACKGROUND AND PURPOSE: Clinical and experimental data indicate that hyperglycemia can aggravate the consequences of stroke and cerebral ischemia. The purpose of this study was to examine the effects of moderate hyperglycemia on the response of the blood-brain barrier to normothermic (37 degrees C) and hypothermic (30 degrees C) global forebrain ischemia. METHODS: Sixteen rats underwent 20 minutes of four-vessel occlusion followed by 30 minutes of postischemic recirculation. We used the protein tracer horseradish peroxidase as an indicator of increased vascular permeability, and rats were perfusion-fixed for microscopic analysis. To produce moderate hyperglycemia, we gave an intraperitoneal injection of 50% dextrose 15 minutes before the ischemic insult. RESULTS: After normothermic brain ischemia, normoglycemic rats (plasma glucose level, 115 +/- 3 mg/dl) demonstrated extravasated horseradish peroxidase mainly restricted to the cerebral cortex. In contrast, more severe and widespread protein extravasation was documented throughout the neuraxis of hyperglycemic (plasma glucose level, 342 +/- 27) rats. Sites of protein leakage included the cerebral cortex, striatum, hippocampus, thalamus, and cerebellum. Foci of protein extravasation were associated with pial and large penetrating vessels. Intraischemic hypothermia significantly attenuated the blood-brain barrier consequences of hyperglycemic brain ischemia. CONCLUSIONS: Under normothermic ischemic conditions, hyperglycemia significantly worsens the degree of acute blood-brain barrier breakdown compared with normoglycemia. Postischemic blood-brain barrier disruption may play an important role in the pathogenesis of increased brain damage associated with systemic hyperglycemia. 相似文献
59.
60.