Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures

Symmetric δ-doped InGaP and AlGaAs PHEMT structures have been grown by organometallic vapor phase epitaxy with properties that approach those of MBE grown AlGaAs structures. The 300 and 77K carrier concentrations for the InGaP PHEMT were 2.72 and 2.56 × 10¹² cm^{2 −2} and the mobilities were 5,920 and 22,000 cm^{2 2}/V.s. These excellent values suggest that problems associated with switching the anion at the channel heterojunction have been overcome. The corresponding values for the AlGaAs PHEMT were 2.51 and 2.19 × 10¹² cm^{2 −2} and 6,500 and 20,400 cm²/V.s. The uniformity in the indium concentration in the InGaAs layer as determined by photoluminescence, photoreflection, double crystal x-ray diffraction, and Rutherford backscattering was found to be good, but the percent In in the AlGaAs pseudo-morphic high electron mobility transistor (PHEMT) was less than that in the InGaP PHEMT even though the programmed values were the same. The uniformity in the doping distribution as determined by secondary ion mass spectroscopy and electrochemical capacitance-voltage measurements was found to be good, but it decreased with distance from the center of the susceptor. Also, most of the dopants in the δ-doped InGaP and AlGaAs layers were activated.     

Optimizing rod window width in positron emission tomography

A technique determines the optimal window width for orbiting rod transmission studies in positron emission tomography (PET). Windowing reduces noise in orbiting rod transmission studies. Lines-of-response (LOR) which intersect the rods generate primarily true coincidence events. LOR which pass far from the rods generate random and scatter events. Since the angular position of the orbiting rods is known in real-time, LOR which produce mostly noise are gated off. When optimally determined, the rod window width maximizes the noise equivalent counts (NEC) collected in the transmission study. Transaxial rod projection profiles of trues, randoms, and scatter produce NEC versus window width plots. For the ECAT EXACT line of PET systems and a 20-cm water cylinder, optimal is five LOR wide.     

Analysis of abnormal signals within the QRS complex of thehigh-resolution electrocardiogram

Presents a new, quantitative approach to measuring abnormal intra-QRS signals, using the high-resolution electrocardiogram (HRECG). These signals are conventionally known as QRS “notches and slurs.” They are measured qualitatively and form the basis for the ECG identification of myocardial infarction. The HRECG is used for detection of ventricular late potentials (LP), which are linked with the presence of a reentry substrate for ventricular tachycardia (VT) after a myocardial infarction. LP's are defined as signals from areas of delayed conduction which outlast the normal QRS period. The authors' objective is to quantify very low-level abnormal signals that may not outlast the normal QRS period. In this work, abnormal intra-QRS potentials (AIQP) were characterized by removing the predictable, smooth part of the QRS from the original waveform. This was represented as the impulse response of an ARX parametric model, with model order selected empirically from a training data set. AIQP were estimated using the residual of the modeling procedure. Critical AIQP parameters to separate VT and non-VT subjects were obtained using discriminant functions. Results suggest that AIQP indexes are a new predictive index of the HRECG for VT. The concept of abnormal intra-QRS potentials permits the characterization of pathophysiological signals contained wholly within the normal QRS period, but related to arrhythmogenesis. The new method may have other applications, such as detection of myocardial ischemia and improved ECG identification of the site of myocardial infarction, particularly in the absence of Q waves     

Low-threshold narrow-linewidth InGaAs-GaAs ridge-waveguide DBR lasers with first-order surface gratings

The design and operation of InGaAs-GaAs ridge-waveguide distributed Bragg reflector (DBR) single quantum-well lasers with first-order surface gratings fabricated using only a single growth step are presented. Uncoated devices exhibit CW threshold currents as low as 6 mA with slope efficiencies of 0.46 W/A. By varying the period of the first-order DBR grating, a wavelength range of 540 /spl Aring/ (/spl sim/15.2 THz) is obtained with the threshold currents and slope efficiencies remaining below 10 mA and above 0.40 W/A, respectively, over the entire wavelength range. High characteristic temperature, T/sub 0/, values of 450 K, as measured between T=10/spl deg/C and 40/spl deg/C, are obtained for devices with Bragg wavelengths positively detuned from the peak gain wavelength. The spectral linewidth minimum of these devices is below 25 kHz, which is the resolution limit of the self-heterodyning system used to measure the spectral linewidth.     

A comparison of the trap properties and locations within GaAs fieldeffect transistors measured under different bias conditions

The activation energy and capture cross section of traps found in GaAs field effect transistors (GaAs FETs) have been measured with both ohmic channel and current saturation bias using a variety of transient, frequency dispersion, and noise spectroscopy techniques. With current saturation bias these effects have been seen in both the transconductance and the output conductance. The results for all methods and bias conditions are compared with those found by others. The relative sensitivity of the techniques and the location of the traps are discussed     

116-fs soliton source based on an Er-Yb codoped waveguide amplifier

A passively mode-locked soliton ring fiber laser is investigated that utilizes a 4.5-cm erbium-ytterbium (Er-Yb) codoped waveguide amplifier as the gain element. The resulting short cavity (1.3 m of fiber) eliminates multipulsing behaviour and reduces the effects of resonant sidebands, enabling generation of 116-fs solitons with a pulse energy of 160 pJ at a fundamental repetition rate of 130 MHz     

Analysis of dynamic magnetic resonance images

Dynamic magnetic resonance (MR) imaging with contrast agents is a very promising technique for studying tissue perfusion in vivo. A temporal series of magnetic resonance images of the same slice are acquired following the injection of a contrast agent into the blood stream. The image intensity depends on the local concentration of the contrast agent, so that tissue perfusion can be studied by the image series. A new method of analyzing such series is described here. Nonparametric linear regression is used for modeling the image intensity along the series on a pixel by pixel basis. After modeling, some relevant quantities describing the time series are obtained and displayed as images. Due to its flexibility, this approach is preferred to parametric modeling when pathology is present since this can induce a wide spread of patterns for the pixel image intensity along time. Results of the application of the method to series of dynamic magnetic resonance images from ischaemic rat brains after the injection of the susceptibility agent Sprodiamide Inj. (Dy-DTPA-BMA) are shown and compared to results from a related known method.     

A monolithic DC temperature compensation bias scheme for multistageHEMT integrated circuits

This work benchmarks the first demonstration of a multistage monolithic HEMT IC design which incorporates a DC temperature compensated current-mirror bias scheme. This is believed to be the first demonstrated monolithic HEMT bias scheme of its kind. The active bias approach has been applied to a 2-18 GHz five-section low noise HEMT distributed amplifier which achieves a nominal gain of 12.5 dB and a noise figure <2.5 dB across a 2-18 GHz band, The regulated current-mirror scheme achieves better than 0.2% current regulation over a 0-125°C temperature range, The RF gain response was also measured over the same temperature range and showed less than 0.75 dB gain degradation. This results in a -0.006 dB/°C temperature coefficient which is strictly due to HEMT device G_m variation with temperature. The regulated current-mirror circuit can be employed as a stand-alone V_gs-voltage reference circuit which fan be monolithically applied to the gate bias terminal of existing HEMT ICs for providing temperature compensated performance, This monolithic bias approach provides a practical solution to DC bias regulation and temperature compensation for HEMT MMICs which can improve the performance, reliability, and cost of integrated microwave assemblies (IMAs) used in space-flight military applications     

MQW wavelength-tunable DBR lasers with monolithically integrated external cavity electroabsorption modulators with low-driving voltages fabricated by selective-area MOCVD

The design and operation of multiple-quantum-well (MQW) wavelength-tunable distributed Bragg reflector (DBR) InGaAs QW lasers with nonabsorbing gratings and monolithically integrated external cavity electroabsorption modulators fabricated by selective-area MOCVD are presented. Uncoated devices exhibit CW threshold currents as low as 10.5 mA with slope efficiencies of 0.21 W/A from the laser facet. Wavelength tuning of 7 nm is obtained by injection current heating of the DBR section. These devices also exhibit extinction ratios of 18 dB from the modulator facet at a low modulator bias of 1 V, when measured with a broad-area detector. When coupled to a singlemode fiber, these devices exhibited high extinction ratios of 40 dB at a modulator bias of 1.25 V.